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    SYSTEMS FOR CONTROLLING PLASMA DENSITY DISTRIBUTION PROFILES INCLUDING MULTI-RF ZONED SUBSTRATE SUPPORTS
    1.
    发明公开
    SYSTEMS FOR CONTROLLING PLASMA DENSITY DISTRIBUTION PROFILES INCLUDING MULTI-RF ZONED SUBSTRATE SUPPORTS 审中-公开

    公开(公告)号：US20230352272A1

    公开(公告)日：2023-11-02

    申请号：US18013145

    申请日：2021-10-12

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Juline SHOEB ,  Alexander Miller PATERSON

    IPC: H01J37/32

    CPC classification number: H01J37/32183 ,  H01J37/32724 ,  H01J37/32091 ,  H01J2237/2007 ,  H01J2237/0656 ,  H01L21/6833

    Abstract: A substrate processing system includes a substrate support, N RF sources and a controller. The substrate support is arranged in a processing chamber, supports a substrate on an upper surface thereof, and includes: a baseplate made of electrically conductive material and M electrodes disposed in the baseplate. Each of the N RF sources supplies a respective RF signal to one or more of the M electrodes, where: M and N are integers greater than or equal to two; each of the respective RF signals is supplied to a different set of the M electrodes; and each of the sets includes a different one or more of the M electrodes. The controller causes one or more coils to strike and maintain plasma in the processing chamber independently of the N RF sources and separately controls voltage outputs of the N RF sources to adjust the plasma in the processing chamber.

    SYSTEMS FOR COOLING RF HEATED CHAMBER COMPONENTS
    2.
    发明申请
    SYSTEMS FOR COOLING RF HEATED CHAMBER COMPONENTS 有权

    公开(公告)号：US20230039721A1

    公开(公告)日：2023-02-09

    申请号：US17960576

    申请日：2022-10-05

    Applicant: Lam Research Corporation

    Inventor： Jon MCCHESNEY ,  Saravanapriyan SRIRAMAN ,  Richard A. MARSH ,  Alexander Miller PATERSON ,  John HOLLAND

    IPC: H01J37/32

    Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

    SYSTEMS FOR COOLING RF HEATED CHAMBER COMPONENTS
    5.
    发明申请
    SYSTEMS FOR COOLING RF HEATED CHAMBER COMPONENTS 有权

    公开(公告)号：US20210050188A1

    公开(公告)日：2021-02-18

    申请号：US17084103

    申请日：2020-10-29

    Applicant: Lam Research Corporation

    Inventor： Jon MCCHESNEY ,  Saravanapriyan SRIRAMAN ,  Richard A. MARSH ,  Alexander Miller PATERSON ,  John HOLLAND

    IPC: H01J37/32

    Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

    DIRECT FREQUENCY TUNING FOR MATCHLESS PLASMA SOURCE IN SUBSTRATE PROCESSING SYSTEMS
    9.
    发明申请
    DIRECT FREQUENCY TUNING FOR MATCHLESS PLASMA SOURCE IN SUBSTRATE PROCESSING SYSTEMS 有权

    公开(公告)号：US20210210314A1

    公开(公告)日：2021-07-08

    申请号：US17267920

    申请日：2019-08-08

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Yuhou WANG ,  Maolin LONG ,  Ying WU ,  Alexander Miller PATERSON

    IPC: H01J37/32

    Abstract: A drive circuit for providing RF power to a component of a substrate processing system includes a plasma source operating at a first frequency. A load includes the component of the substrate processing system. An impedance network connects the plasma source to the load. A current sensor senses current at an output of the plasma source. A voltage sensor senses voltage at the output of the plasma source. A controller includes a tuned frequency calculator configured to calculate a tuned frequency for the plasma source based on the voltage, the current, and a configuration of the impedance network and to adjust the first frequency based on the tuned frequency.

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