公开(公告)号：US20250054778A1

公开(公告)日：2025-02-13

申请号：US18719047

申请日：2022-12-08

Applicant: LAM RESEARCH CORPORATION

Inventor： Anthony DE LA LLERA ,  Pratik MANKIDY ,  John HOLLAND

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: An assembly for a processing chamber of a substrate processing system includes a first component, a second component, and a thermal interface material arranged between the first component and the second component. At least one of the first component and the second component is configured to be exposed to plasma within the processing chamber, the thermal interface material has a first surface that faces and is in direct contact with the first component and a second surface that faces and is in direct contact with the second component the thermal interface material is comprised of a silicon polymer with at least one of aligned carbon fibers and carbon nanotubes (CNTs), wherein the at least one of the carbon fibers and the CNTs are aligned in a direction perpendicular to the first surface and the second surface.

公开(公告)号：US20230075462A1

公开(公告)日：2023-03-09

申请号：US17796740

申请日：2021-02-03

Applicant: LAM RESEARCH CORPORATION

Inventor： Alexander MATYUSHKIN ,  Keith COMENDANT ,  Adam Christopher MACE ,  Darrell EHRLICH ,  John HOLLAND ,  Felix Leib KOZAKEVICH ,  Alexei MARAKHTANOV

IPC: H01J37/32 ,  H01L21/687

Abstract: An edge ring system comprising a substrate support configured to support a substrate during plasma processing and including a baseplate and an upper layer arranged on the baseplate. An edge ring support includes a first body and an electrostatic clamping electrode arranged in the first body. The edge ring support is arranged above the baseplate and radially outside of the substrate during processing. An edge ring includes a second body arranged on and electrostatically clamped to the edge ring support during plasma processing.

公开(公告)号：US20220005674A1

公开(公告)日：2022-01-06

申请号：US17480993

申请日：2021-09-21

Applicant: MKS Instruments, Inc. ,  LAM RESEARCH CORPORATION

Inventor： Aaron T. RADOMSKI ,  Benjamin J. GITLIN ,  Larry J. FISK, II ,  Mariusz OLDZIEJ ,  Aaron M. BURRY ,  Jonathan W. SMYKA ,  Alexei MARAKHTANOV ,  Bing JI ,  Felix Leib KOZAKEVICH ,  John HOLLAND ,  Ranadeep BHOWMICK

IPC: H01J37/32

Abstract: A radio frequency (RF) generator system includes first and second RF power sources, each RF power source applying a respective RF signal and second RF signal to a load. The first RF signal is applied in accordance with the application of the second RF signal. The application of the first RF signal is synchronized to application of the second RF signal. The first RF signal may be amplitude modulated in synchronization with the second RF signal, and the amplitude modulation can include blanking of the first RF signal. A frequency offset may be applied to the first RF signal in synchronization with the second RF signal. A variable actuator associated with the first RF power source may be controlled in accordance with the second RF signal.

公开(公告)号：US20230039721A1

公开(公告)日：2023-02-09

申请号：US17960576

申请日：2022-10-05

Applicant: Lam Research Corporation

Inventor： Jon MCCHESNEY ,  Saravanapriyan SRIRAMAN ,  Richard A. MARSH ,  Alexander Miller PATERSON ,  John HOLLAND

IPC: H01J37/32

Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

公开(公告)号：US20180247796A1

公开(公告)日：2018-08-30

申请号：US15969583

申请日：2018-05-02

Applicant: Lam Research Corporation

Inventor： Jon MCCHESNEY ,  Saravanapriyan SRIRAMAN ,  Richard A. MARSH ,  Alexander Miller PATERSON ,  John HOLLAND

IPC: H01J37/32

CPC classification number: H01J37/32522 ,  H01J37/32082 ,  H01J37/32119 ,  H01J37/32238

Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

公开(公告)号：US20230128551A1

公开(公告)日：2023-04-27

申请号：US17915573

申请日：2021-03-12

Applicant: LAM RESEARCH CORPORATION

Inventor： Yohan SEEPERSAD ,  Ryan BISE ,  John HOLLAND ,  Leonid BELAU ,  Adam Christopher MACE

IPC: C23C16/458 ,  H01J37/32 ,  C23C16/455 ,  H01L21/687

Abstract: An edge ring for a substrate processing system includes an annular body and an annular channel disposed in the annular body circumferentially along an inner diameter of the annular body. The annular channel includes N distinct sections, where N is an integer greater than 1. The edge ring includes N injection ports arranged circumferentially on the annular body to respectively inject one or more gases into the N distinct sections of the annular channel. The edge ring includes a flange extending radially inwards from the inner diameter of the annular body. A plurality of slits is arranged in the flange. The slits are in fluid communication with the annular channel and extend radially inwards from the annular channel to deliver the one or more gases.

公开(公告)号：US20210050188A1

公开(公告)日：2021-02-18

申请号：US17084103

申请日：2020-10-29

Applicant: Lam Research Corporation

Inventor： Jon MCCHESNEY ,  Saravanapriyan SRIRAMAN ,  Richard A. MARSH ,  Alexander Miller PATERSON ,  John HOLLAND

IPC: H01J37/32

Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

公开(公告)号：US20230133798A1

公开(公告)日：2023-05-04

申请号：US17915558

申请日：2021-03-22

Applicant: LAM RESEARCH CORPORATION

Inventor： Adam Christopher MACE ,  John HOLLAND ,  Alexander MATYUSHKIN ,  Rajesh DORAI

IPC: C23C16/458 ,  C23C16/46

Abstract: A substrate support for a substrate processing chamber includes a baseplate, an edge ring arranged on the baseplate, a seal arrangement located between the edge ring and the baseplate that is configured to define an interface between the edge ring and the baseplate, and at least one channel in fluid communication with the interface and configured to supply a heat transfer gas to the interface.

公开(公告)号：US20180005851A1

公开(公告)日：2018-01-04

申请号：US15201207

申请日：2016-07-01

Applicant: Lam Research Corporation

Inventor： Benson Q. TONG ,  Harmeet SINGH ,  John HOLLAND ,  Ryan BISE

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/677

CPC classification number: H01L21/67069 ,  H01J37/32009 ,  H01J37/32477 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32743 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/67748

Abstract: A chamber filler kit for balancing electric fields in a dielectric etch chamber is provided. A transport module filler comprises an electrical conductive body, an etch resistant surface, wherein the etch resistant surface comprises an inner curved surface, which matches a partial cylindrical bore of the etch chamber, and a wafer transport aperture, wherein the transport module filler fits into a transport aperture of the etch chamber. A transport module sealer plate is adapted to be mechanically and electrically connected to the partially cylindrical chamber body and the transport module filler. A bias housing filler is adapted to be mechanically and electrically connected to a bias housing wall and comprises a conductive body and an etch resistant surface, wherein the etch resistant surface comprises a curved surface, which matches the partial cylindrical bore.