公开(公告)号：US20230253193A1

公开(公告)日：2023-08-10

申请号：US18013768

申请日：2021-11-16

Applicant: LAM RESEARCH CORPORATION

Inventor： Jeremy George SMITH ,  Alexander MATYUSHKIN ,  Eric SAMULON ,  Keith COMENDANT ,  Yixuan YU

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/44

CPC classification number: H01J37/32724 ,  C23C16/4581 ,  C23C16/4404 ,  H01J2237/334 ,  H01L21/6833

Abstract: A substrate support for a substrate processing system includes a baseplate and a spray coat layer arranged on the baseplate. The spray coat layer has a first thickness and a first thermal conductivity. A bond layer is arranged on the spray coat layer. The bond layer has a second thickness and a second thermal conductivity. A ceramic layer is arranged on the bond layer. At least one of the first thickness and the second thickness varies in at least one of a radial direction and an azimuthal direction such that a third thermal conductivity between the ceramic layer and the baseplate varies in the at least one of the radial direction and the azimuthal direction.

公开(公告)号：US20230087913A1

公开(公告)日：2023-03-23

申请号：US17799897

申请日：2021-02-18

Applicant: LAM RESEARCH CORPORATION

Inventor： Feng WANG ,  Alexander MATYUSHKIN ,  Darrell EHRLICH ,  Eric SAMULON

IPC: H01L21/683 ,  H01J37/32

Abstract: A baseplate for a substrate support in a substrate processing system includes at least one coolant channel formed within the baseplate. The at least one coolant channel defines a volume within the baseplate configured to retain a coolant and follows a path configured to distribute the coolant in the volume throughout the baseplate. At least one fin is provided within the at least one coolant channel The at least one fin extends from at least one of a top, a bottom, and a sidewall of the at least one coolant channel into the volume to increase a surface area of the at least one coolant channel.

公开(公告)号：US20180277412A1

公开(公告)日：2018-09-27

申请号：US15988581

申请日：2018-05-24

Applicant: Lam Research Corporation

Inventor： Christopher KIMBALL ,  Keith GAFF ,  Alexander MATYUSHKIN ,  Zhigang CHEN ,  Keith COMENDANT

IPC: H01L21/683 ,  H01J37/32

Abstract: An electrostatic chuck assembly for processing a semiconductor substrate is provided. The electrostatic chuck assembly includes a first layer, a baseplate, a second layer, and at least one annular gasket. The first layer includes ceramic material and a first radio frequency (RF) electrode. The first RF electrode is embedded in the ceramic material. The second layer is disposed between the first layer and the baseplate. The at least one annular gasket extends along an upper surface of the baseplate and through the second layer. The at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode. RF power passes from the baseplate to the first RF electrode through the at least one annular gasket.

公开(公告)号：US20240404798A1

公开(公告)日：2024-12-05

申请号：US18800410

申请日：2024-08-12

Applicant: Lam Research Corporation

Inventor： Alexander MATYUSHKIN ,  Keith COMENDANT ,  Darrell EHRLICH ,  Eric SAMULON

IPC: H01J37/32 ,  H01L21/683

Abstract: A spark suppression apparatus for a helium line in an electrostatic chuck in a plasma processing chamber is provided. The spark suppression apparatus comprises a dielectric multilumen plug in the helium line, wherein the dielectric multilumen plug has a plurality of lumens, wherein the plurality of lumens are numbered between 30 to 100,000 lumens and have a width of between 1 micron and 200 microns.

公开(公告)号：US20230075462A1

公开(公告)日：2023-03-09

申请号：US17796740

申请日：2021-02-03

Applicant: LAM RESEARCH CORPORATION

Inventor： Alexander MATYUSHKIN ,  Keith COMENDANT ,  Adam Christopher MACE ,  Darrell EHRLICH ,  John HOLLAND ,  Felix Leib KOZAKEVICH ,  Alexei MARAKHTANOV

IPC: H01J37/32 ,  H01L21/687

Abstract: An edge ring system comprising a substrate support configured to support a substrate during plasma processing and including a baseplate and an upper layer arranged on the baseplate. An edge ring support includes a first body and an electrostatic clamping electrode arranged in the first body. The edge ring support is arranged above the baseplate and radially outside of the substrate during processing. An edge ring includes a second body arranged on and electrostatically clamped to the edge ring support during plasma processing.

公开(公告)号：US20220223387A1

公开(公告)日：2022-07-14

申请号：US17281183

申请日：2019-10-29

Applicant: LAM RESEARCH CORPORATION

Inventor： Alexander MATYUSHKIN ,  Keith COMENDANT ,  Darrell EHRLICH ,  Eric SAMULON

IPC: H01J37/32 ,  H01L21/683

Abstract: A spark suppression apparatus for a helium line in an electrostatic chuck in a plasma processing chamber is provided. The spark suppression apparatus comprises a dielectric multilumen plug in the helium line, wherein the dielectric multilumen plug has a plurality of lumens, wherein the plurality of lumens are numbered between 30 to 100,000 lumens and have a width of between 1 micron and 200 microns.

公开(公告)号：US20240347366A1

公开(公告)日：2024-10-17

申请号：US18610138

申请日：2024-03-19

Applicant: Lam Research Corporation

Inventor： Alexander MATYUSHKIN ,  Keith Comendant ,  John Patrick Holland

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/6831 ,  H01J2237/002 ,  H01J2237/2007

Abstract: An electrostatic chuck for a substrate processing system is provided and includes a baseplate, an intermediate layer disposed on the baseplate, and a top plate. The top plate is bonded to the baseplate via the intermediate layer and is configured to electrostatically clamp to a substrate. The top plate includes a monopolar clamping electrode and seals. The monopolar clamping electrode includes a groove opening pattern with coolant gas groove opening sets. The seals separate coolant gas zones. The coolant gas zones include four or more coolant gas zones. Each of the coolant gas zones includes distinct coolant gas groove sets. The top plate includes the distinct coolant gas groove sets. Each of the distinct coolant gas groove sets has one or more coolant gas supply holes and corresponds to a respective one of the coolant gas groove opening sets.

公开(公告)号：US20230133798A1

公开(公告)日：2023-05-04

申请号：US17915558

申请日：2021-03-22

Applicant: LAM RESEARCH CORPORATION

Inventor： Adam Christopher MACE ,  John HOLLAND ,  Alexander MATYUSHKIN ,  Rajesh DORAI

IPC: C23C16/458 ,  C23C16/46

Abstract: A substrate support for a substrate processing chamber includes a baseplate, an edge ring arranged on the baseplate, a seal arrangement located between the edge ring and the baseplate that is configured to define an interface between the edge ring and the baseplate, and at least one channel in fluid communication with the interface and configured to supply a heat transfer gas to the interface.

公开(公告)号：US20210005494A1

公开(公告)日：2021-01-07

申请号：US16969260

申请日：2018-04-05

Applicant: LAM RESEARCH CORPORATION

Inventor： Alexander MATYUSHKIN ,  Keith Laurence COMENDANT ,  John Patrick HOLLAND

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

Abstract: An electrostatic chuck for a substrate processing system is provided and includes a baseplate, an intermediate layer disposed on the baseplate, and a top plate. The top plate is bonded to the baseplate via the intermediate layer and is configured to electrostatically clamp to a substrate. The top plate includes a monopolar clamping electrode and seals. The monopolar clamping electrode includes a groove opening pattern with coolant gas groove opening sets. The seals separate coolant gas zones. The coolant gas zones include four or more coolant gas zones. Each of the coolant gas zones includes distinct coolant gas groove sets. The top plate includes the distinct coolant gas groove sets. Each of the distinct coolant gas groove sets has one or more coolant gas supply holes and corresponds to a respective one of the coolant gas groove opening sets.

公开(公告)号：US20180286642A1

公开(公告)日：2018-10-04

申请号：US15942099

申请日：2018-03-30

Applicant: Lam Research Corporation

Inventor： Alexander MATYUSHKIN ,  John Patrick HOLLAND ,  Mark H. WILCOXSON ,  Keith COMENDANT ,  Taner OZEL ,  Fangli HAO

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  C23C16/46

Abstract: An apparatus for processing a substrate is provided. A first coolant gas pressure system, a second coolant gas pressure system, a third coolant gas pressure system, and a fourth coolant gas pressure system are provided to provide independent gas pressures. An electrostatic chuck has a chuck surface with a center point and a radius and comprises a first plurality of coolant gas ports further than a first radius from a center point, a second plurality of coolant gas ports spaced between the first radius from the center point and a second radius from the center point, a third plurality of coolant gas ports spaced between the second radius from the center point and a third radius from the center point, and a fourth plurality of coolant gas ports is spaced within the third radius from the center point. An outer sealing band extends around the chuck surface.