ELECTROSTATIC CHUCK WITH FLEXIBLE WAFER TEMPERATURE CONTROL

    公开(公告)号:US20180286642A1

    公开(公告)日:2018-10-04

    申请号:US15942099

    申请日:2018-03-30

    Abstract: An apparatus for processing a substrate is provided. A first coolant gas pressure system, a second coolant gas pressure system, a third coolant gas pressure system, and a fourth coolant gas pressure system are provided to provide independent gas pressures. An electrostatic chuck has a chuck surface with a center point and a radius and comprises a first plurality of coolant gas ports further than a first radius from a center point, a second plurality of coolant gas ports spaced between the first radius from the center point and a second radius from the center point, a third plurality of coolant gas ports spaced between the second radius from the center point and a third radius from the center point, and a fourth plurality of coolant gas ports is spaced within the third radius from the center point. An outer sealing band extends around the chuck surface.

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