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    Methods of forming a pattern using negative-type photoresist compositions
    1.
    发明申请
    Methods of forming a pattern using negative-type photoresist compositions 有权
    使用负型光致抗蚀剂组合物形成图案的方法

    公开(公告)号：US20100248134A1

    公开(公告)日：2010-09-30

    申请号：US12662076

    申请日：2010-03-30

    申请人： Kyoung-Mi Kim ,  Jin-Baek Kim ,  Ji-Young Park ,  Young-Ho Kim

    发明人： Kyoung-Mi Kim ,  Jin-Baek Kim ,  Ji-Young Park ,  Young-Ho Kim

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0758 ,  G03F7/0382 ,  G03F7/094 ,  H01L21/0271 ,  H01L21/3081 ,  H01L21/31144 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10873 ,  H01L27/11546

    摘要： A method of forming a pattern and a negative-type photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymer, a photoacid generator, and a solvent, wherein the polymer includes an alkoxysilyl group as a side chain and is cross-linkable by an acid to be insoluble in a developer; curing a first portion of the photoresist film by exposing the first portion to light, the exposed first portion being cured by a cross-linking reaction of the alkoxysilyl groups therein; and providing a developer to the photoresist film to remove a second portion of the photoresist film that is not exposed to light, thereby forming a photoresist pattern on the substrate.

    摘要翻译： 一种形成图案和负型光致抗蚀剂组合物的方法，所述方法包括通过在其上涂覆光致抗蚀剂组合物在基底上形成光致抗蚀剂膜，所述光致抗蚀剂组合物包括聚合物，光致酸产生剂和溶剂，其中所述聚合物包括 作为侧链的烷氧基甲硅烷基，可以被不可溶于显影剂的酸交联; 通过将第一部分暴露于光来固化光致抗蚀剂膜的第一部分，暴露的第一部分通过其中的烷氧基甲硅烷基的交联反应固化; 以及向所述光致抗蚀剂膜提供显影剂以去除未曝光的所述光致抗蚀剂膜的第二部分，由此在所述基板上形成光致抗蚀剂图案。

    Methods of forming a pattern using negative-type photoresist compositions
    2.
    发明授权
    Methods of forming a pattern using negative-type photoresist compositions 有权
    使用负型光致抗蚀剂组合物形成图案的方法

    公开(公告)号：US08377626B2

    公开(公告)日：2013-02-19

    申请号：US12662076

    申请日：2010-03-30

    申请人： Kyoung-Mi Kim ,  Jin-Baek Kim ,  Ji-Young Park ,  Young-Ho Kim

    发明人： Kyoung-Mi Kim ,  Jin-Baek Kim ,  Ji-Young Park ,  Young-Ho Kim

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/40

    CPC分类号： G03F7/0758 ,  G03F7/0382 ,  G03F7/094 ,  H01L21/0271 ,  H01L21/3081 ,  H01L21/31144 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10873 ,  H01L27/11546

    摘要： A method of forming a pattern and a negative-type photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymer, a photoacid generator, and a solvent, wherein the polymer includes an alkoxysilyl group as a side chain and is cross-linkable by an acid to be insoluble in a developer; curing a first portion of the photoresist film by exposing the first portion to light, the exposed first portion being cured by a cross-linking reaction of the alkoxysilyl groups therein; and providing a developer to the photoresist film to remove a second portion of the photoresist film that is not exposed to light, thereby forming a photoresist pattern on the substrate.

    摘要翻译： 一种形成图案和负型光致抗蚀剂组合物的方法，所述方法包括通过在其上涂覆光致抗蚀剂组合物在基底上形成光致抗蚀剂膜，光致抗蚀剂组合物包括聚合物，光致酸产生剂和溶剂，其中聚合物包括 作为侧链的烷氧基甲硅烷基，可以被不可溶于显影剂的酸交联; 通过将第一部分暴露于光来固化光致抗蚀剂膜的第一部分，暴露的第一部分通过其中的烷氧基甲硅烷基的交联反应固化; 以及向所述光致抗蚀剂膜提供显影剂以去除未曝光的所述光致抗蚀剂膜的第二部分，由此在所述基板上形成光致抗蚀剂图案。

    Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same
    5.
    发明授权
    Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same 失效
    硅氧烷聚合物组合物，使用其形成图案的方法，以及使用其制造半导体的方法

    公开(公告)号：US07776730B2

    公开(公告)日：2010-08-17

    申请号：US12216682

    申请日：2008-07-09

    申请人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： H01L21/20 ,  H01L21/3205 ,  H01L21/4763

    CPC分类号： C08G77/38 ,  H01L28/91

    摘要： A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R1, R2 R3, and R4 independently represents H, OH, CH3, C2H5, C3H7, C4H9 or C5H11, R′ represents CH2, C2H4, C3H6, C4H8, C5H10 or C6H12, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

    摘要翻译： 硅氧烷聚合物组合物包含基于硅氧烷聚合物组合物的总重量为约93重量％至约98重量％的量的有机溶剂和约2重量％至约2重量％的硅氧烷配合物 7重量％，基于硅氧烷聚合物组合物的总重量，硅氧烷配合物包括具有引入的羧酸的硅氧烷聚合物并由下式1表示，其中R1，R2 R3和R4各自独立地表示H， OH，CH3，C2H5，C3H7，C4H9或C5H11，R'表示CH2，C2H4，C3H6，C4H8，C5H10或C6H12，n表示正整数，硅氧烷配合物的硅氧烷聚合物的数均分子量为约4,000 至约5,000。

    Siloxane polymer composition
    8.
    发明授权
    Siloxane polymer composition 失效
    硅氧烷聚合物组合物

    公开(公告)号：US08450444B2

    公开(公告)日：2013-05-28

    申请号：US12856359

    申请日：2010-08-13

    申请人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： C08G77/385

    CPC分类号： C08G77/38 ,  H01L28/91

    摘要： A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R1, R2 R3, and R4 independently represents H, OH, CH3, C2H5, C3H7, C4H9 or C5H11, R′ represents CH2, C2H4, C3H6, C4H8, C5H10 or C6H12, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

    摘要翻译： 硅氧烷聚合物组合物包含基于硅氧烷聚合物组合物的总重量为约93重量％至约98重量％的量的有机溶剂和约2重量％至约2重量％的硅氧烷配合物 7重量％，基于硅氧烷聚合物组合物的总重量，硅氧烷配合物包括具有引入的羧酸的硅氧烷聚合物并由下式1表示，其中R1，R2 R3和R4各自独立地表示H， OH，CH3，C2H5，C3H7，C4H9或C5H11，R'表示CH2，C2H4，C3H6，C4H8，C5H10或C6H12，n表示正整数，硅氧烷配合物的硅氧烷聚合物的数均分子量为约4,000 至约5,000。

    Methods of Forming a Photoresist Pattern Using Plasma Treatment of Photoresist Patterns
    9.
    发明申请
    Methods of Forming a Photoresist Pattern Using Plasma Treatment of Photoresist Patterns 审中-公开
    使用等离子体处理光刻胶图案形成光刻胶图案的方法

    公开(公告)号：US20110300712A1

    公开(公告)日：2011-12-08

    申请号：US13103375

    申请日：2011-05-09

    申请人： Kyoung-Mi Kim ,  Jeong-Ju Park ,  Mi-Ra Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    发明人： Kyoung-Mi Kim ,  Jeong-Ju Park ,  Mi-Ra Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    IPC分类号： H01L21/308 ,  H01L21/312

    CPC分类号： H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11521

    摘要： Methods of forming a photoresist pattern include forming a first photoresist pattern on a substrate and treating the first photoresist pattern with plasma that modifies etching characteristics of the first photoresist pattern. This modification may include making the first photoresist pattern more susceptible to removal during subsequent processing. The plasma-treated first photoresist pattern is covered with a second photoresist layer, which is patterned into a second photoresist pattern that contacts sidewalls of the plasma-treated first photoresist pattern. The plasma-treated first photoresist pattern is selectively removed from the substrate to reveal the remaining second photoresist pattern. The second photoresist pattern is used as an etching mask during the selective etching of a portion of the substrate (e.g., target layer). The use of the second photoresist pattern as an etching mask may yield narrower linewidths in the etched portion of the substrate than are achievable using the first photoresist pattern alone.

    摘要翻译： 形成光致抗蚀剂图案的方法包括在基板上形成第一光致抗蚀剂图案，并用等离子体处理第一光致抗蚀剂图案，其改变第一光致抗蚀剂图案的蚀刻特性。 该修改可以包括使第一光致抗蚀剂图案在随后的处理期间更易于去除。 等离子体处理的第一光致抗蚀剂图案被第二光致抗蚀剂层覆盖，第二光致抗蚀剂层被图案化成与等离子体处理的第一光致抗蚀剂图案的侧壁接触的第二光致抗蚀剂 从衬底选择性地去除等离子体处理的第一光致抗蚀剂图案以显示剩余的第二光致抗蚀剂图案。 在选择性蚀刻基板（例如，目标层）的一部分期间，将第二光致抗蚀剂图案用作蚀刻掩模。 使用第二光致抗蚀剂图案作为蚀刻掩模可以在衬底的蚀刻部分中产生比仅使用第一光致抗蚀剂图案可实现的更窄的线宽。

    Siloxane polymer compositions and methods of manufacturing a capacitor using the same
    10.
    发明授权
    Siloxane polymer compositions and methods of manufacturing a capacitor using the same 失效
    硅氧烷聚合物组合物及其制造方法

    公开(公告)号：US07736527B2

    公开(公告)日：2010-06-15

    申请号：US12008215

    申请日：2008-01-09

    申请人： Kyoung-Mi Kim ,  Myung-Sun Kim ,  Young-Ho Kim

    发明人： Kyoung-Mi Kim ,  Myung-Sun Kim ,  Young-Ho Kim

    IPC分类号： H01G4/01 ,  C08G77/50 ,  B05D5/12

    CPC分类号： C08G77/20 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/32115 ,  H01L21/32139 ,  H01L28/91

    摘要： Siloxane polymer compositions and methods of manufacturing a capacitor are described. In some embodiments, a mold layer pattern is formed on a substrate having a conductive structure, and the mold layer pattern has an opening to expose the conductive structure. A conductive layer is formed on the substrate. A buffer layer pattern is formed on the conductive layer formed in the opening. The buffer layer pattern includes a siloxane polymer represented by the following Chemical Formula 1. The conductive layer is selectively removed to form a lower electrode. The mold layer pattern and the buffer layer pattern are removed. A dielectric layer and an upper electrode are formed on the substrate to form a capacitor. The methods may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

    摘要翻译： 描述硅氧烷聚合物组合物和制造电容器的方法。 在一些实施例中，在具有导电结构的基底上形成模具层图案，并且模具层图案具有露出导电结构的开口。 在基板上形成导电层。 在形成在开口中的导电层上形成缓冲层图案。 缓冲层图案包括由以下化学式1表示的硅氧烷聚合物。选择性地除去导电层以形成下电极。 去除模层图案和缓冲层图案。 在基板上形成电介质层和上电极，形成电容器。 这些方法可以简化电容器和半导体器件的制造工艺，并且可以提高它们的效率。