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    Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same
    1.
    发明授权
    Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same 失效
    硅氧烷聚合物组合物，使用其形成图案的方法，以及使用其制造半导体的方法

    公开(公告)号：US07776730B2

    公开(公告)日：2010-08-17

    申请号：US12216682

    申请日：2008-07-09

    申请人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： H01L21/20 ,  H01L21/3205 ,  H01L21/4763

    CPC分类号： C08G77/38 ,  H01L28/91

    摘要： A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R1, R2 R3, and R4 independently represents H, OH, CH3, C2H5, C3H7, C4H9 or C5H11, R′ represents CH2, C2H4, C3H6, C4H8, C5H10 or C6H12, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

    摘要翻译： 硅氧烷聚合物组合物包含基于硅氧烷聚合物组合物的总重量为约93重量％至约98重量％的量的有机溶剂和约2重量％至约2重量％的硅氧烷配合物 7重量％，基于硅氧烷聚合物组合物的总重量，硅氧烷配合物包括具有引入的羧酸的硅氧烷聚合物并由下式1表示，其中R1，R2 R3和R4各自独立地表示H， OH，CH3，C2H5，C3H7，C4H9或C5H11，R'表示CH2，C2H4，C3H6，C4H8，C5H10或C6H12，n表示正整数，硅氧烷配合物的硅氧烷聚合物的数均分子量为约4,000 至约5,000。

    Lip sealing tape
    2.
    发明授权
    Lip sealing tape 有权

    公开(公告)号：US11517470B2

    公开(公告)日：2022-12-06

    申请号：US16764165

    申请日：2018-11-12

    申请人： Mi Ra Park

    发明人： Mi Ra Park

    IPC分类号： A61F5/56 ,  B33Y10/00 ,  B33Y50/02 ,  C09J7/30

    摘要： A lip sealing tape for preventing a user's mouth from opening in daily life and during sleep is proposed. The lip sealing tape adds a mouth-closing vector to assist a vector that displaces a position of a user's tongue forward and upward, thereby forming a closed vector system of muscles of the entire body to increase physical stability and induce nasal respiration (breathing through a user's nose) to gradually reduce oral respiration while promoting nasal respiration. The lip sealing tape is characterized by simply adding the mouth-closing vector to prevent opening of the user's upper and lower lips, by means of horizontal and vertical adhesive tape portions, thereby minimizing a contact area with a user's facial skin when worn and thus minimizing discomfort due to stuffiness while maximizing safety when worn.

    METHOD OF FORMING FINE PATTERN EMPLOYING SELF-ALIGNED DOUBLE PATTERNING
    4.
    发明申请
    METHOD OF FORMING FINE PATTERN EMPLOYING SELF-ALIGNED DOUBLE PATTERNING 失效
    形成使用自对准双文件的精细图案的方法

    公开(公告)号：US20080305636A1

    公开(公告)日：2008-12-11

    申请号：US12132548

    申请日：2008-06-03

    申请人： Kyoung-Mi KIM ,  Jae-Ho KIM ,  Young-Ho KIM ,  Myung-Sun KIM ,  Youn-Kyung WANG ,  Mi-Ra PARK

    发明人： Kyoung-Mi KIM ,  Jae-Ho KIM ,  Young-Ho KIM ,  Myung-Sun KIM ,  Youn-Kyung WANG ,  Mi-Ra PARK

    IPC分类号： H01L21/311

    CPC分类号： H01L21/0337

    摘要： There are provided a method of forming a fine pattern employing self-aligned double patterning. The method includes providing a substrate. First mask patterns are formed on the substrate. A reactive layer is formed on the substrate having the first mask patterns. The reactive layer adjacent to the first mask patterns is reacted using a chemical attachment process, thereby forming sacrificial layers along outer walls of the first mask patterns. The reactive layer that is not reacted is removed to expose the sacrificial layers. Second mask patterns are formed between the sacrificial layers adjacent to sidewalls of the first mask patterns facing each other. The sacrificial layers are removed to expose the first and second mask patterns and the substrate exposed between the first and second mask patterns. The substrate is etched using the first and second mask patterns as an etching mask.

    摘要翻译： 提供了使用自对准双重图案形成精细图案的方法。 该方法包括提供基板。 在基板上形成第一掩模图案。 在具有第一掩模图案的基板上形成反应层。 使用化学附着工艺反应与第一掩模图案相邻的反应层，从而沿着第一掩模图案的外壁形成牺牲层。 去除未反应的反应层以暴露牺牲层。 在与彼此面对的第一掩模图案的侧壁相邻的牺牲层之间形成第二掩模图案。 去除牺牲层以暴露在第一和第二掩模图案之间暴露的第一和第二掩模图案和衬底。 使用第一和第二掩模图案作为蚀刻掩模蚀刻衬底。

    ANTI-C-MET ANTIBODY HAVING HGF ACTIVITY AND USE THEREOF
    5.
    发明申请
    ANTI-C-MET ANTIBODY HAVING HGF ACTIVITY AND USE THEREOF 有权
    具有HGF活性的抗C-MET抗体及其用途

    公开(公告)号：US20140193431A1

    公开(公告)日：2014-07-10

    申请号：US14123533

    申请日：2012-06-04

    申请人： Young Woo Park ,  KiWon Jo ,  Chan Woong Park ,  Seok Ho Yoo ,  Myeoung Hee Jang ,  Hye Nan Kim ,  Seon Ha Yun ,  Kyu Won Cho ,  Mi Ra Park

    发明人： Young Woo Park ,  KiWon Jo ,  Chan Woong Park ,  Seok Ho Yoo ,  Myeoung Hee Jang ,  Hye Nan Kim ,  Seon Ha Yun ,  Kyu Won Cho ,  Mi Ra Park

    IPC分类号： C07K16/28

    CPC分类号： C07K16/2863 ,  A61K2039/505 ,  C07K2317/21 ,  C07K2317/622 ,  C07K2317/75 ,  C07K2317/92 ,  C07K2317/94

    摘要： Disclosed are a human antibody comprising a human complementarity-determining region (CDR), which binds specifically to c-Met, and a framework region (FR), a polynucleotide encoding the human antibody, an expression vector comprising the polynucleotide, a transformant transformed with the expression vector, a method of producing the human antibody B7 by culturing the transformant, a wound healing composition comprising the human antibody as an active ingredient, a cell regeneration composition comprising the antibody as an active ingredient, and a drug conjugate comprising a drug linked to the human antibody. The c-Met-specific human antibody can function as an HGF mimic that can be used as a wound healing composition. The antibody can be widely used to determine the treatment and prognosis of various diseases, including neuronal infarction, progressive nephropathy, liver cirrhosis, lung fibrosis, kidney injury, liver injury, lung injury, and ulcerative wounds, which are treated by activation of HGF or c-Met.

    摘要翻译： 公开了包含与c-Met特异性结合的人互补决定区（CDR）的人抗体和框架区（FR），编码人抗体的多核苷酸，包含多核苷酸的表达载体，转化了 表达载体，通过培养转化体生产人抗体B7的方法，包含人抗体作为活性成分的伤口愈合组合物，包含抗体作为活性成分的细胞再生组合物和包含药物连接的药物偶联物 对人抗体。 c-Met特异性人抗体可用作可用作伤口愈合组合物的HGF模拟物。 该抗体可广泛用于确定通过激活HGF或其他疾病治疗的各种疾病的治疗和预后，包括神经元梗死，进行性肾病，肝硬化，肺纤维化，肾损伤，肝损伤，肺损伤和溃疡性创伤 c-Met。

    Siloxane polymer composition
    6.
    发明授权
    Siloxane polymer composition 失效
    硅氧烷聚合物组合物

    公开(公告)号：US08450444B2

    公开(公告)日：2013-05-28

    申请号：US12856359

    申请日：2010-08-13

    申请人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： C08G77/385

    CPC分类号： C08G77/38 ,  H01L28/91

    摘要： A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R1, R2 R3, and R4 independently represents H, OH, CH3, C2H5, C3H7, C4H9 or C5H11, R′ represents CH2, C2H4, C3H6, C4H8, C5H10 or C6H12, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

    摘要翻译： 硅氧烷聚合物组合物包含基于硅氧烷聚合物组合物的总重量为约93重量％至约98重量％的量的有机溶剂和约2重量％至约2重量％的硅氧烷配合物 7重量％，基于硅氧烷聚合物组合物的总重量，硅氧烷配合物包括具有引入的羧酸的硅氧烷聚合物并由下式1表示，其中R1，R2 R3和R4各自独立地表示H， OH，CH3，C2H5，C3H7，C4H9或C5H11，R'表示CH2，C2H4，C3H6，C4H8，C5H10或C6H12，n表示正整数，硅氧烷配合物的硅氧烷聚合物的数均分子量为约4,000 至约5,000。

    Methods of Forming a Pattern of Semiconductor Devices
    7.
    发明申请
    Methods of Forming a Pattern of Semiconductor Devices 审中-公开
    形成半导体器件图案的方法

    公开(公告)号：US20120064724A1

    公开(公告)日：2012-03-15

    申请号：US13222447

    申请日：2011-08-31

    申请人： Bo-hee Lee ,  Kyoung-mi Kim ,  Jeong-ju Park ,  Mi-ra Park ,  Jae-ho Kim ,  Young-ho Kim

    发明人： Bo-hee Lee ,  Kyoung-mi Kim ,  Jeong-ju Park ,  Mi-ra Park ,  Jae-ho Kim ,  Young-ho Kim

    IPC分类号： H01L21/308

    CPC分类号： H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139

    摘要： Methods of forming a pattern of a semiconductor device including performing a double patterning process without using an atomic layer deposition (ALD) oxide film are provided. The methods may include forming a mask pattern on a substrate; forming a chemical attach process (CAP) material layer covering at least a portion of the mask pattern; forming a CAP adhesive layer by adhering at least a portion of the CAP material layer to the mask pattern by using a first baking process and a first development process; forming an interlayer covering at least a portion of the mask pattern and the CAP adhesive layer; and removing the mask pattern and the interlayer while allowing the CAP adhesive layer to remain by using a second baking process and a second development process.

    摘要翻译： 提供了形成半导体器件的图案的方法，包括不使用原子层沉积（ALD）氧化物膜来执行双重图案化工艺。 所述方法可以包括在衬底上形成掩模图案; 形成覆盖所述掩模图案的至少一部分的化学附着工艺（CAP）材料层; 通过使用第一烘烤处理和第一显影处理将CAP材料层的至少一部分粘附到掩模图案上形成CAP粘合剂层; 形成覆盖所述掩模图案和所述CAP粘合剂层的至少一部分的中间层; 以及通过使用第二烘烤处理和第二显影处理使CAP粘合剂层保持不动，从而去除掩模图案和中间层。

    Methods of Forming a Photoresist Pattern Using Plasma Treatment of Photoresist Patterns
    8.
    发明申请
    Methods of Forming a Photoresist Pattern Using Plasma Treatment of Photoresist Patterns 审中-公开
    使用等离子体处理光刻胶图案形成光刻胶图案的方法

    公开(公告)号：US20110300712A1

    公开(公告)日：2011-12-08

    申请号：US13103375

    申请日：2011-05-09

    申请人： Kyoung-Mi Kim ,  Jeong-Ju Park ,  Mi-Ra Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    发明人： Kyoung-Mi Kim ,  Jeong-Ju Park ,  Mi-Ra Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    IPC分类号： H01L21/308 ,  H01L21/312

    CPC分类号： H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11521

    摘要： Methods of forming a photoresist pattern include forming a first photoresist pattern on a substrate and treating the first photoresist pattern with plasma that modifies etching characteristics of the first photoresist pattern. This modification may include making the first photoresist pattern more susceptible to removal during subsequent processing. The plasma-treated first photoresist pattern is covered with a second photoresist layer, which is patterned into a second photoresist pattern that contacts sidewalls of the plasma-treated first photoresist pattern. The plasma-treated first photoresist pattern is selectively removed from the substrate to reveal the remaining second photoresist pattern. The second photoresist pattern is used as an etching mask during the selective etching of a portion of the substrate (e.g., target layer). The use of the second photoresist pattern as an etching mask may yield narrower linewidths in the etched portion of the substrate than are achievable using the first photoresist pattern alone.

    摘要翻译： 形成光致抗蚀剂图案的方法包括在基板上形成第一光致抗蚀剂图案，并用等离子体处理第一光致抗蚀剂图案，其改变第一光致抗蚀剂图案的蚀刻特性。 该修改可以包括使第一光致抗蚀剂图案在随后的处理期间更易于去除。 等离子体处理的第一光致抗蚀剂图案被第二光致抗蚀剂层覆盖，第二光致抗蚀剂层被图案化成与等离子体处理的第一光致抗蚀剂图案的侧壁接触的第二光致抗蚀剂 从衬底选择性地去除等离子体处理的第一光致抗蚀剂图案以显示剩余的第二光致抗蚀剂图案。 在选择性蚀刻基板（例如，目标层）的一部分期间，将第二光致抗蚀剂图案用作蚀刻掩模。 使用第二光致抗蚀剂图案作为蚀刻掩模可以在衬底的蚀刻部分中产生比仅使用第一光致抗蚀剂图案可实现的更窄的线宽。