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    METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
    1.
    发明申请
    METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 失效
    制造碳化硅基板的方法

    公开(公告)号：US20120009761A1

    公开(公告)日：2012-01-12

    申请号：US13256991

    申请日：2010-09-28

    申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

    发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

    IPC分类号： H01L21/306 ,  H01L21/304

    CPC分类号： C30B29/36 ,  C30B33/06

    摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.

    摘要翻译： 制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。 在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。 通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。 表面层至少部分去除。 在该去除步骤之后，背面和主表面彼此连接。

    Method for manufacturing silicon carbide substrate
    2.
    发明授权
    Method for manufacturing silicon carbide substrate 失效
    碳化硅基板的制造方法

    公开(公告)号：US08435866B2

    公开(公告)日：2013-05-07

    申请号：US13256991

    申请日：2010-09-28

    申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

    发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

    IPC分类号： H01L21/306 ,  H01L21/304

    CPC分类号： C30B29/36 ,  C30B33/06

    摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.

    摘要翻译： 制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。 在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。 通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。 表面层至少部分去除。 在该去除步骤之后，背面和主表面彼此连接。

    METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
    3.
    发明申请
    METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
    制造碳化硅基板的方法

    公开(公告)号：US20120325196A1

    公开(公告)日：2012-12-27

    申请号：US13530486

    申请日：2012-06-22

    申请人： Kyoko OKITA ,  Shinsuke Fujiwara

    发明人： Kyoko OKITA ,  Shinsuke Fujiwara

    IPC分类号： H01L21/304

    CPC分类号： H01L21/02021 ,  C30B29/36 ,  C30B33/00 ,  C30B33/06 ,  H01L29/045 ,  H01L29/1608

    摘要： A method for manufacturing a silicon carbide substrate includes the steps of preparing an ingot of single crystal silicon carbide, obtaining a silicon carbide substrate by cutting the ingot, and forming a chamfer portion in a region including an outer peripheral surface of the silicon carbide substrate. In the step of obtaining the silicon carbide substrate, the ingot is cut such that a main surface of the silicon carbide substrate forms an angle of not less than 10° with respect to a {0001} plane.

    摘要翻译： 碳化硅基板的制造方法包括以下步骤：制备单晶碳化硅锭，通过切割锭获得碳化硅基体，并在包括碳化硅基板的外周表面的区域中形成倒角部分。 在获得碳化硅衬底的步骤中，切割该锭，使得碳化硅衬底的主表面相对于{0001}面形成不小于10°的角度。

    Method for growing group III nitride crystal
    9.
    发明授权
    Method for growing group III nitride crystal 有权
    生长III族氮化物晶体的方法

    公开(公告)号：US09005362B2

    公开(公告)日：2015-04-14

    申请号：US13115560

    申请日：2011-05-25

    申请人： Yuki Hiromura ,  Koji Uematsu ,  Hiroaki Yoshida ,  Shinsuke Fujiwara

    发明人： Yuki Hiromura ,  Koji Uematsu ,  Hiroaki Yoshida ,  Shinsuke Fujiwara

    IPC分类号： C30B21/02 ,  H01L21/02 ,  C30B25/18 ,  C30B29/40

    CPC分类号： H01L21/02389 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

    摘要： The present invention is to provide a method for growing a group III nitride crystal that has a large size and has a small number of pits formed in the main surface of the crystal by using a plurality of tile substrates. A method for growing a group III nitride crystal includes a step of preparing a plurality of tile substrates 10 including main surfaces 10m having a shape of a triangle or a convex quadrangle that allows two-dimensional close packing of the plurality of tile substrates; a step of arranging the plurality of tile substrates 10 so as to be two-dimensionally closely packed such that, at any point across which vertexes of the plurality of tile substrates 10 oppose one another, 3 or less of the vertexes oppose one another; and a step of growing a group III nitride crystal 20 on the main surfaces 10m of the plurality of tile substrates arranged.

    摘要翻译： 本发明提供一种通过使用多个瓦片基板来生长具有大尺寸并且具有少量形成在晶体的主表面中的凹坑的III族氮化物晶体的方法。 用于生长III族氮化物晶体的方法包括制备多个瓦片基板10的步骤，该瓦片基板10包括允许多个瓦片基板的二维密封的具有三角形形状的主表面10m或凸形四边形; 将多个瓦片基板10布置成二维紧密堆叠的步骤，使得在多个瓦片基板10的顶点彼此相对的任何点处，3个或更少的顶点彼此相对; 以及在布置的多个瓦片基板的主表面10m上生长III族氮化物晶体20的步骤。