SILICON WAFER WITH CONTROLLED DISTRIBUTION OF EMBRYOS THAT BECOME OXYGEN PRECIPITATES BY SUCCEEDING ANNEALING AND ITS MANUFACTURING METHOD
    3.
    发明申请
    SILICON WAFER WITH CONTROLLED DISTRIBUTION OF EMBRYOS THAT BECOME OXYGEN PRECIPITATES BY SUCCEEDING ANNEALING AND ITS MANUFACTURING METHOD 有权
    通过控制分解通过回收退火而产生氧化沉淀的胚胎的硅砂及其制造方法

    公开(公告)号:US20100038755A1

    公开(公告)日:2010-02-18

    申请号:US12521268

    申请日:2007-12-27

    IPC分类号: H01L29/36 H01L21/322

    CPC分类号: H01L21/3225

    摘要: A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device manufacturing process. In the silicon wafer, embryos are substantially removed in a denuded zone, and embryos are distributed at a relatively higher concentration in a bulk region. Also, by controlling behaviors of embryos, a silicon wafer having a desired concentration profile of oxygen precipitates by succeeding thermal annealing is manufactured with high reliability and reproducibility.

    摘要翻译: 制造硅晶片的方法包括以下步骤:通过在半导体器件制造过程中施加的热退火,产生并稳定成为氧沉淀物的胚胎。 在硅晶片中,在裸露区域中基本上除去胚胎,并且在体积区域以相对较高的浓度分布胚胎。 此外,通过控制胚胎的行为,以高可靠性和再现性制造具有期望的热退火的氧析出物浓度分布的硅晶片。

    Silicon wafer with controlled distribution of embryos that become oxygen precipitates by succeeding annealing and its manufacturing method
    4.
    发明授权
    Silicon wafer with controlled distribution of embryos that become oxygen precipitates by succeeding annealing and its manufacturing method 有权
    通过后续退火而成为氧沉淀的胚胎受控分布的硅晶片及其制造方法

    公开(公告)号:US08298926B2

    公开(公告)日:2012-10-30

    申请号:US12521268

    申请日:2007-12-27

    IPC分类号: H01L21/324 C03B25/00

    CPC分类号: H01L21/3225

    摘要: A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device manufacturing process. In the silicon wafer, embryos are substantially removed in a denuded zone, and embryos are distributed at a relatively higher concentration in a bulk region. Also, by controlling behaviors of embryos, a silicon wafer having a desired concentration profile of oxygen precipitates by succeeding thermal annealing is manufactured with high reliability and reproducibility.

    摘要翻译: 制造硅晶片的方法包括以下步骤:通过在半导体器件制造过程中施加的热退火,产生并稳定成为氧沉淀物的胚胎。 在硅晶片中,在裸露区域中基本上除去胚胎,并且在体积区域以相对较高的浓度分布胚胎。 此外,通过控制胚胎的行为,以高可靠性和再现性制造具有期望的热退火的氧析出物浓度分布的硅晶片。

    HYDRODYNAMIC BEARING ASSEMBLY AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    HYDRODYNAMIC BEARING ASSEMBLY AND METHOD OF MANUFACTURING THE SAME 审中-公开
    水动力轴承组件及其制造方法

    公开(公告)号:US20130051714A1

    公开(公告)日:2013-02-28

    申请号:US13333589

    申请日:2011-12-21

    IPC分类号: F16C32/06 F16C33/00

    摘要: There are provided a hydrodynamic bearing assembly and a method of manufacturing the same. The hydrodynamic bearing assembly includes: a lubricating oil filled so as to form a liquid-vapor interface between stationary members and rotating members; and a lipophilic coating formed on the liquid-vapor interface of the lubricating oil so as to prevent lubricating oil leakage. Therefore, the lipophilic coating is formed on the interface of the lubricating oil and an oil repellent material is formed on a surface of at least one of the stationary members and the rotating members, whereby the scattering and the leakage of the lubricating oil may be effectively prevented.

    摘要翻译: 提供了一种流体动力轴承组件及其制造方法。 流体动力轴承组件包括:填充以在固定构件和旋转构件之间形成液 - 气界面的润滑油; 以及在润滑油的液 - 气界面上形成的亲油性涂层,以防止润滑油泄漏。 因此,在润滑油的界面上形成亲油性涂层,并且在至少一个固定部件和旋转部件的表面上形成防油材料,从而可以有效地使润滑油的散射和泄漏 防止了

    SILICON WAFERS AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    SILICON WAFERS AND METHOD OF FABRICATING THE SAME 有权
    硅晶片及其制造方法

    公开(公告)号:US20070298523A1

    公开(公告)日:2007-12-27

    申请号:US11765973

    申请日:2007-06-20

    IPC分类号: H01L21/00

    CPC分类号: H01L21/324 H01L21/3225

    摘要: By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation Induced Stacking Fault) located on the surface region of the wafer. By performing the disclosed two-step rapid thermal process, the distribution of defects can be accurately controlled and an ideal device active zone can be formed up to a certain distance from the surfaces of the wafer. In addition, it is possible to maximize the internal gettering (IG) efficiency by enabling the oxygen precipitates and the bulk stacking faults to have constant densities in the depth direction in an internal region of the wafer, that is, the bulk region. In order to obtain the constant concentration profile of the oxygen precipitates and the bulk stacking faults in the bulk region, the wafer is subjected to the aforementioned two-step rapid thermal process in a predetermined mixed gas atmosphere.

    摘要翻译: 通过使用两步RTP(快速热处理)工艺,提供晶片,其具有通过控制位于晶片表面区域上的精细氧沉淀物和OiSF(氧化诱导堆叠故障)而固定的理想半导体器件区域。 通过执行所公开的两步快速热处理,可以精确地控制缺陷的分布,并且可以形成理想的器件有源区至距离晶片表面一定距离。 此外,通过使晶体的内部区域即体积区域中的氧析出物和体积堆垛层错能够在深度方向上具有恒定的密度,可以使内部吸气(IG)效率最大化。 为了获得体积区域中的氧沉淀物的恒定浓度分布和体积堆垛层错,将晶片在预定的混合气体气氛中进行前述的两步快速热处理。

    Silicon wafers and method of fabricating the same
    7.
    发明授权
    Silicon wafers and method of fabricating the same 有权
    硅晶片及其制造方法

    公开(公告)号:US07242075B2

    公开(公告)日:2007-07-10

    申请号:US10699438

    申请日:2003-10-31

    IPC分类号: H01L29/32

    CPC分类号: H01L21/324 H01L21/3225

    摘要: By using a two-step RTP (rapid thermal processing) process, the wafer is provided which has an ideal semiconductor device region secured by controlling fine oxygen precipitates and OiSFs (Oxidation Induced Stacking Fault) located on the surface region of the wafer. By performing the disclosed two-step rapid thermal process, the distribution of defects can be accurately controlled and an ideal device active zone can be formed up to a certain distance from the surfaces of the wafer. In addition, it is possible to maximize the internal gettering (IG) efficiency by enabling the oxygen precipitates and the bulk stacking faults to have constant densities in the depth direction in an internal region of the wafer, that is, the bulk region. In order to obtain the constant concentration profile of the oxygen precipitates and the bulk stacking faults in the bulk region, the wafer is subjected to the aforementioned two-step rapid thermal process in a predetermined mixed gas atmosphere.

    摘要翻译: 通过使用两步RTP(快速热处理)工艺,提供晶片,其具有通过控制位于晶片表面区域上的精细氧沉淀物和OiSF(氧化诱导堆叠故障)而固定的理想半导体器件区域。 通过执行所公开的两步快速热处理,可以精确地控制缺陷的分布,并且可以形成理想的器件有源区至距离晶片表面一定距离。 此外,通过使晶体的内部区域即体积区域中的氧析出物和体积堆垛层错能够在深度方向上具有恒定的密度,可以使内部吸气(IG)效率最大化。 为了获得体积区域中的氧沉淀物的恒定浓度分布和体积堆垛层错,将晶片在预定的混合气体气氛中进行前述的两步快速热处理。

    Image sensor module and camera module package having the same
    8.
    发明申请
    Image sensor module and camera module package having the same 失效
    图像传感器模块和相机模块包装具有相同的功能

    公开(公告)号:US20070126899A1

    公开(公告)日:2007-06-07

    申请号:US11582406

    申请日:2006-10-18

    申请人: Kun Kim

    发明人: Kun Kim

    IPC分类号: H04N5/335

    摘要: An image sensor module comprises an image sensor including a pixel region picking up an image from light incident from the outside and a signal processing region having bumps formed in the outer portion of the image sensor so as to process an electrical signal with respect to the image picked up by the pixel region; and a board attached to the image sensor by a liquid adhesive and provided with a window such that the pixel region of the image sensor receives light, the board including: a first dummy pattern formed on at least a portion around the window; a circuit pattern formed in a position spaced in a predetermined distance outward from the first dummy pattern; and board-side pads electrically connected to the circuit pattern so as to come in contact with the bumps formed in the image sensor.

    摘要翻译: 图像传感器模块包括图像传感器,其包括从外部入射的光拾取图像的像素区域和形成在图像传感器的外部部分中的凸起的信号处理区域,以处理相对于图像的电信号 由像素区域拾取; 以及通过液体粘合剂附接到图像传感器并且设置有窗口的板,使得图像传感器的像素区域接收光,该板包括:形成在窗口周围的至少一部分上的第一虚设图案; 电路图案形成在距离第一虚设图案向外隔开预定距离的位置; 以及与电路图形电连接以与形成在图像传感器中的凸块接触的电路板侧焊盘。

    Method and apparatus for reproducing data from recording medium using local storage
    10.
    发明申请
    Method and apparatus for reproducing data from recording medium using local storage 有权
    使用本地存储从记录介质再现数据的方法和装置

    公开(公告)号:US20060120223A1

    公开(公告)日:2006-06-08

    申请号:US11292105

    申请日:2005-12-02

    IPC分类号: G11B21/08

    摘要: A method and apparatus for reproducing data from a recording medium using a local storage is disclosed. A method and apparatus for downloading data associated with the recording medium from an external part, and reproducing the downloaded data is disclosed. A binding unit combined with the recording medium from among the downloaded data of the local storage is formed, and is combined with files of the recording medium using the binding information, such that the virtual package is formed. Data of the recording medium and/or data of the local storage are reproduced by the virtual package. If a specific file contained in the binding unit is equal to a specific file contained in the recording medium when the virtual package is formed, priority is assigned to the file of the binding unit so that the virtual package is formed. Therefore, data of the recording medium and data of the local storage can be effectively reproduced at the same time, resulting in greater convenience of a user.

    摘要翻译: 公开了一种使用本地存储器从记录介质再现数据的方法和装置。 公开了一种用于从外部部分下载与记录介质相关的数据并再现下载的数据的方法和装置。 形成从本地存储器的下载数据中与记录介质组合的绑定单元,并且使用绑定信息与记录介质的文件组合,从而形成虚拟包。 虚拟包装再现本地存储器的记录介质和/或数据的数据。 如果包含在绑定单元中的特定文件等于在形成虚拟包时包含在记录介质中的特定文件,则优先级被分配给绑定单元的文件,从而形成虚拟包。 因此,可以同时有效地再现记录介质的数据和本地存储器的数据,从而使用户更方便。