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1.发明授权Wafer support pin for preventing slip dislocation during annealing of water and wafer annealing method using the same 有权用于防止水退火期间的滑脱错位的晶片支撑销和使用其的晶片退火方法公开(公告)号：US07767596B2
公开(公告)日：2010-08-03
申请号：US12005415
申请日：2007-12-26
申请人： Kun Kim , Jin-Kyun Hong , Woo-Hyun Seo , Kyoung-Hwan Song
发明人： Kun Kim , Jin-Kyun Hong , Woo-Hyun Seo , Kyoung-Hwan Song
IPC分类号： H01L21/26
CPC分类号： H01L21/6875 , H01L21/68757
摘要： A wafer support pin has a front end contacted with a wafer such that the front end is flat or rounded. Thus, gravitational stress is minimized during annealing the wafer, thereby minimizing slip dislocation. This wafer support pin is suitably used for annealing of a wafer, particularly high temperature rapid thermal annealing of a large-diameter wafer.
摘要翻译： 晶片支撑销具有与晶片接触的前端，使得前端是平坦的或圆形的。 因此，在退火晶片期间重力应力最小化，从而最小化滑动位错。 该晶片支撑销适合用于晶片退火，特别是大直径晶片的高温快速热退火。
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2.发明申请Wafer support pin for preventing slip dislocation during annealing of water and wafer annealing method using the same 有权用于防止水退火期间的滑脱错位的晶片支撑销和使用其的晶片退火方法公开(公告)号：US20080176415A1
公开(公告)日：2008-07-24
申请号：US12005415
申请日：2007-12-26
申请人： Kun Kim , Jin-Kyun Hong , Woo-Hyun Seo , Kyoung-Hwan Song
发明人： Kun Kim , Jin-Kyun Hong , Woo-Hyun Seo , Kyoung-Hwan Song
IPC分类号： H01L21/263
CPC分类号： H01L21/6875 , H01L21/68757
摘要： A wafer support pin has a front end contacted with a wafer such that the front end is flat or rounded. Thus, gravitational stress is minimized during annealing the wafer, thereby minimizing slip dislocation. This wafer support pin is suitably used for annealing of a wafer, particularly high temperature rapid thermal annealing of a large-diameter wafer.
摘要翻译： 晶片支撑销具有与晶片接触的前端，使得前端是平坦的或圆形的。 因此，在退火晶片期间重力应力最小化，从而最小化滑动位错。 该晶片支撑销适合用于晶片退火，特别是大直径晶片的高温快速热退火。
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3.发明授权公开(公告)号：US08298926B2
公开(公告)日：2012-10-30
申请号：US12521268
申请日：2007-12-27
申请人： Hyung-Kook Park , Jin-Kyun Hong , Kun Kim , Chung-Geun Koh
发明人： Hyung-Kook Park , Jin-Kyun Hong , Kun Kim , Chung-Geun Koh
IPC分类号： H01L21/324 , C03B25/00
CPC分类号： H01L21/3225
摘要： A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device manufacturing process. In the silicon wafer, embryos are substantially removed in a denuded zone, and embryos are distributed at a relatively higher concentration in a bulk region. Also, by controlling behaviors of embryos, a silicon wafer having a desired concentration profile of oxygen precipitates by succeeding thermal annealing is manufactured with high reliability and reproducibility.
摘要翻译： 制造硅晶片的方法包括以下步骤：通过在半导体器件制造过程中施加的热退火，产生并稳定成为氧沉淀物的胚胎。 在硅晶片中，在裸露区域中基本上除去胚胎，并且在体积区域以相对较高的浓度分布胚胎。 此外，通过控制胚胎的行为，以高可靠性和再现性制造具有期望的热退火的氧析出物浓度分布的硅晶片。
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4.发明申请SILICON WAFER WITH CONTROLLED DISTRIBUTION OF EMBRYOS THAT BECOME OXYGEN PRECIPITATES BY SUCCEEDING ANNEALING AND ITS MANUFACTURING METHOD 有权通过控制分解通过回收退火而产生氧化沉淀的胚胎的硅砂及其制造方法公开(公告)号：US20100038755A1
公开(公告)日：2010-02-18
申请号：US12521268
申请日：2007-12-27
申请人： Hyung Kook Park , Jin-Kyun Hong , Kun Kim , Chung-Geun Koh
发明人： Hyung Kook Park , Jin-Kyun Hong , Kun Kim , Chung-Geun Koh
IPC分类号： H01L29/36 , H01L21/322
CPC分类号： H01L21/3225
摘要： A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device manufacturing process. In the silicon wafer, embryos are substantially removed in a denuded zone, and embryos are distributed at a relatively higher concentration in a bulk region. Also, by controlling behaviors of embryos, a silicon wafer having a desired concentration profile of oxygen precipitates by succeeding thermal annealing is manufactured with high reliability and reproducibility.
摘要翻译： 制造硅晶片的方法包括以下步骤：通过在半导体器件制造过程中施加的热退火，产生并稳定成为氧沉淀物的胚胎。 在硅晶片中，在裸露区域中基本上除去胚胎，并且在体积区域以相对较高的浓度分布胚胎。 此外，通过控制胚胎的行为，以高可靠性和再现性制造具有期望的热退火的氧析出物浓度分布的硅晶片。
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