公开(公告)号：US20230307369A1

公开(公告)日：2023-09-28

申请号：US17890377

申请日：2022-08-18

Applicant: Kioxia Corporation

Inventor： Nobuhito Ichiki ,  Keisuke Nakatsuka ,  Shinya Arai ,  Koichi Sakata ,  Susumu Hashimoto

IPC: H01L23/535 ,  H01L23/532 ,  H01L27/11556 ,  H01L27/11582

CPC classification number: H01L23/535 ,  H01L23/53257 ,  H01L27/11556 ,  H01L27/11582

Abstract: A semiconductor memory device includes a first wiring, a second wiring, a memory pillar, a semiconductor layer, and a contact plug. The second wiring is provided above the first wiring in a first direction. The memory pillar penetrating at least one of a portion of the first wiring or a portion of the second wiring in the first direction. The semiconductor layer extends in the first direction provided in the memory pillar. The contact plug contains a metal and has a lower surface provided in the memory pillar, and the lower surface is in contact with the semiconductor layer below an upper surface of the second wiring.

公开(公告)号：US12041788B2

公开(公告)日：2024-07-16

申请号：US17467095

申请日：2021-09-03

Applicant: Kioxia Corporation

Inventor： Tsutomu Nakanishi ,  Yasuaki Ootera ,  Nobuyuki Umetsu ,  Michael Arnaud Quinsat ,  Masaki Kado ,  Susumu Hashimoto ,  Shiho Nakamura ,  Naoharu Shimomura ,  Tsuyoshi Kondo ,  Mutsumi Okajima

IPC: H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80

CPC classification number: H10B61/22 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80

Abstract: A storage device includes: a memory unit and a first pillar. The first pillar includes: a first region having a third portion between a first and a second portion respectively having a first and a second maximum diameter, and having a first minimum diameter, the first and second portions defining a first distance; a second region having a sixth portion between a fourth and a fifth portion respectively having a third and a fourth maximum diameter, and having a second minimum diameter, the fourth and fifth portions defining a second distance; and a third region between the first and second regions, having a ninth portion between a seventh and an eighth portion respectively having a fifth and a sixth maximum diameter, and having a third minimum diameter, the seventh and eighth portions defining a third distance shorter than each of the first and second distances.

公开(公告)号：US12178138B2

公开(公告)日：2024-12-24

申请号：US17447360

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Nobuyuki Umetsu ,  Yasuaki Ootera ,  Masaki Kado ,  Michael Arnaud Quinsat ,  Naoharu Shimomura ,  Tsutomu Nakanishi ,  Shiho Nakamura ,  Susumu Hashimoto ,  Tsuyoshi Kondo

IPC: G11C16/04 ,  G11C11/16 ,  H10B61/00 ,  H10N50/80 ,  H10N50/01

Abstract: A magnetic memory includes: a first and second wirings; an insulator portion; a magnetic member including: a first portion electrically connected to the first wiring; a second portion electrically connected to the second wiring; and a third portion disposed between the first and second portions, the magnetic member extending in a first direction from the first portion toward the second portion and surrounding the insulator portion, and in a cross-section parallel to the first direction and including part of the magnetic member and part of the insulator portion, a curvature of the first portion being smaller than a curvature of the third portion, a length of the first portion in the first direction being greater than half a length of the third portion in the first direction; and a control circuit electrically connected to the first and second wirings.

公开(公告)号：US11417831B2

公开(公告)日：2022-08-16

申请号：US16538974

申请日：2019-08-13

Applicant: KIOXIA CORPORATION

Inventor： Nobuyuki Umetsu ,  Tsuyoshi Kondo ,  Masaki Kado ,  Shiho Nakamura ,  Susumu Hashimoto ,  Yasuaki Ootera ,  Michael Arnaud Quinsat ,  Masahiro Koike ,  Tsutomu Nakanishi ,  Megumi Yakabe ,  Agung Setiadi

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L43/08

Abstract: A magnetic memory according to an embodiment includes: a magnetic member including a first to third magnetic parts, the first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion, the second magnetic part extending in a second direction that crosses the first direction, and the third magnetic part connecting the second magnetic part and the first portion; a first nonmagnetic metal layer arranged along the third magnetic part, the first nonmagnetic metal layer including a first end portion on a side of the second portion, a position of the first end portion along the first direction being between positions of the first and second portions along the first direction; and a first and second electrodes supplying a current between the first and second magnetic parts via the third magnetic part.

公开(公告)号：US11232822B2

公开(公告)日：2022-01-25

申请号：US17010455

申请日：2020-09-02

Applicant: KIOXIA CORPORATION

Inventor： Michael Arnaud Quinsat ,  Tsuyoshi Kondo ,  Masahiro Koike ,  Shiho Nakamura ,  Susumu Hashimoto ,  Masaki Kado ,  Nobuyuki Umetsu ,  Yasuaki Ootera ,  Megumi Yakabe ,  Agung Setiadi ,  Shigeyuki Hirayama ,  Yoshihiro Ueda ,  Tsutomu Nakanishi

IPC: G11C11/16

Abstract: According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.

公开(公告)号：US20210249061A1

公开(公告)日：2021-08-12

申请号：US17010455

申请日：2020-09-02

Applicant: KIOXIA CORPORATION

Inventor： Michael ARNAUD QUINSAT ,  Tsuyoshi Kondo ,  Masahiro Koike ,  Shiho Nakamura ,  Susumu Hashimoto ,  Masaki Kado ,  Nobuyuki Umetsu ,  Yasuaki Ootera ,  Megumi Yakabe ,  Agung Setiadi ,  Shigeyuki Hirayama ,  Yoshihiro Ueda ,  Tsutomu Nakanishi

IPC: G11C11/16

Abstract: According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.