公开(公告)号：US11705210B2

公开(公告)日：2023-07-18

申请号：US17570676

申请日：2022-01-07

Applicant: Kioxia Corporation

Inventor： Akio Sugahara ,  Takaya Handa ,  Ryosuke Isomura ,  Kazuto Uehara ,  Junichi Sato ,  Norichika Asaoka ,  Masashi Yamaoka ,  Bushnaq Sanad ,  Yuzuru Shibazaki ,  Noriyasu Kumazaki ,  Yuri Terada

IPC: G11C16/30 ,  G11C16/04 ,  G11C16/08 ,  G11C16/26 ,  G11C16/32 ,  G11C16/12 ,  H10B69/00

CPC classification number: G11C16/30 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/32 ,  G11C16/12 ,  G11C16/26 ,  H10B69/00

Abstract: A memory device includes a memory cell array, a voltage generation circuit generating one or more voltages supplied to the memory cell array, an input/output circuit receiving an address indicating a region in the memory cell array and a control circuit controlling operations of the memory cell array. The voltage generation circuit generates the voltages before a ready/busy signal changing from a ready state to a busy state.

公开(公告)号：US12159677B2

公开(公告)日：2024-12-03

申请号：US18205915

申请日：2023-06-05

Applicant: Kioxia Corporation

Inventor： Akio Sugahara ,  Takaya Handa ,  Ryosuke Isomura ,  Kazuto Uehara ,  Junichi Sato ,  Norichika Asaoka ,  Masashi Yamaoka ,  Bushnaq Sanad ,  Yuzuru Shibazaki ,  Noriyasu Kumazaki ,  Yuri Terada

IPC: G11C16/30 ,  G11C16/04 ,  G11C16/08 ,  G11C16/32 ,  G11C16/12 ,  G11C16/26 ,  H10B69/00

Abstract: A memory device includes a memory cell array, a voltage generation circuit generating one or more voltages supplied to the memory cell array, an input/output circuit receiving an address indicating a region in the memory cell array, and a control circuit controlling operations of the memory cell array. The control circuit supplies a non-selection voltage of the voltages before a ready/busy signal changes from a ready state to a busy state.