公开(公告)号：US20210280587A1

公开(公告)日：2021-09-09

申请号：US16992265

申请日：2020-08-13

申请人： Kioxia Corporation

发明人： Hiroaki YAMAMOTO ,  Shinichi Asou ,  Kenichi Kawabata ,  Haruyuki Miyata ,  Takahiro Shimokawa ,  Takaco Umezawa ,  Syunsuke Sasaki

IPC分类号： H01L27/11 ,  G11C11/412 ,  G11C11/417

摘要： According to one embodiment, a semiconductor memory device includes, on a substrate, a memory region 600 and a peripheral circuit region 500 in which an MOS transistor 100 is formed. The MOS transistor 100 includes a drain region 120 and a source region 130 disposed in a first direction parallel to a surface of the substrate. On a surface of the drain region 120, a drain electrode 121 is formed to be connected with a contact plug 122. Further, on a surface of the source region 130, a source electrode 131 is formed to be connected with a contact plug 132. When viewed in the first direction, the drain electrode 121 has a region that does not overlap with the source electrode 131, and the source electrode 131 has a region that does not overlap with the drain electrode 121.

公开(公告)号：US11805635B2

公开(公告)日：2023-10-31

申请号：US16992265

申请日：2020-08-13

申请人： Kioxia Corporation

发明人： Hiroaki Yamamoto ,  Shinichi Asou ,  Kenichi Kawabata ,  Haruyuki Miyata ,  Takahiro Shimokawa ,  Takaco Umezawa ,  Syunsuke Sasaki

IPC分类号： H10B10/00 ,  G11C11/417 ,  G11C11/412

CPC分类号： H10B10/12 ,  G11C11/412 ,  G11C11/417 ,  H10B10/18

摘要： According to one embodiment, a semiconductor memory device includes, on a substrate, a memory region and a peripheral circuit region in which an MOS transistor is formed. The MOS transistor includes a drain region and a source region disposed in a first direction parallel to a surface of the substrate. On a surface of the drain region, a drain electrode is formed to be connected with a contact plug. Further, on a surface of the source region, a source electrode is formed to be connected with a contact plug. When viewed in the first direction, the drain electrode has a region that does not overlap with the source electrode, and the source electrode has a region that does not overlap with the drain electrode.