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    Method and apparatus for forming a film on an object to be processed
    1.
    发明授权
    Method and apparatus for forming a film on an object to be processed 失效
    在待处理物体上形成膜的方法和装置

    公开(公告)号：US06454909B1

    公开(公告)日：2002-09-24

    申请号：US09611665

    申请日：2000-07-06

    申请人： Kimihiro Matsuse ,  Sakae Nakatsuka ,  Kentaro Oshimo

    发明人： Kimihiro Matsuse ,  Sakae Nakatsuka ,  Kentaro Oshimo

    IPC分类号： C23C1434

    CPC分类号： C23C16/45565 ,  C23C16/45521 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/481 ,  H01L21/67069

    摘要： A processing apparatus includes a processing chamber, a support mechanism provided in the processing chamber to support a wafer having an underlying film formed on a major surface and adjacent side face, and a supply member provided at the processing chamber and spaced from the support mechanism, to supply an incoming gas into the processing chamber. A gas carrying mechanism is provided for selectively sending a film forming gas and etching gas to the gas supply member. A main film is formed on a portion of an underlying film formed on the wafer supported on the support mechanism, by using the film forming gas supplied from the gas supply member. A portion of the underlying film, which is exposed, not covered with the main film, is etched away by the etching gas supplied from the gas supplied member.

    摘要翻译： 一种处理装置，包括处理室，设置在处理室中以支撑具有形成在主表面和相邻侧面上的下面的膜的晶片的支撑机构，以及设置在处理室处并与支撑机构间隔开的供给构件， 以将进入的气体供应到处理室中。 提供了一种气体输送机构，用于选择性地将成膜气体和蚀刻气体送到气体供应构件。 通过使用从气体供给构件供给的成膜气体，在支撑在支撑机构上的形成在晶片上的下层膜的一部分上形成主膜。 暴露于未被主膜覆盖的底层膜的一部分被从供气部件供给的蚀刻气体蚀刻掉。

    Method of forming a metal film for electrode
    2.
    发明申请
    Method of forming a metal film for electrode 失效
    形成电极用金属膜的方法

    公开(公告)号：US20050191803A1

    公开(公告)日：2005-09-01

    申请号：US11032060

    申请日：2005-01-11

    申请人： Kimihiro Matsuse ,  Hayashi Otsuki

    发明人： Kimihiro Matsuse ,  Hayashi Otsuki

    IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L29/49 ,  H01L21/8238

    CPC分类号： H01L21/76843 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76877 ,  H01L23/53238 ,  H01L29/4941 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a refractory metal film doped with III or V group elements. The first process gas is supplied from a first gas source through a first gas introducing member to and through a gas supply mechanism toward a substrate within a processing vessel. The second process gas is supplied from a second gas source through a second gas introducing member to and through the gas supply mechanism toward the substrate within the processing vessel. The processing vessel is purged by evacuating the processing vessel by an evacuating mechanism, while supplying the inert gas from a third source through a third gas introducing member to and through the gas supply mechanism into the processing vessel. The supplying the first process gas and the supplying the second process gas are repeated with the supplying the purging gas being carried out between supplying the first and second gases performed so that residual gas present in the processing vessel after performing the supplying of the first and second process gases is reduced to a level of 1 to 30% based on the entire capacity of the processing vessel.

    摘要翻译： 形成掺杂有III族或V族元素的难熔金属膜的方法。 第一工艺气体从第一气体源通过第一气体引入构件供应到处理容器内并通过气体供给机构朝向衬底。 第二工艺气体从第二气体源通过第二气体引入构件经过气体供给机构向处理容器内的衬底提供。 通过抽空机构抽空处理容器，同时通过第三气体引入构件将惰性气体从第三源供给到气体供给机构并进入处理容器，从而对处理容器进行吹扫。 重复提供第一处理气体和供应第二处理气体，同时供应在供应第一和第二气体之间进行的净化气体，使得在执行第一和第二气体供应之后存在于处理容器中的残留气体 处理气体基于处理容器的整个容量降低至1至30％的水平。

    Film forming apparatus and film forming method
    4.
    发明授权
    Film forming apparatus and film forming method 有权
    成膜装置及成膜方法

    公开(公告)号：US06576062B2

    公开(公告)日：2003-06-10

    申请号：US09752677

    申请日：2001-01-03

    申请人： Kimihiro Matsuse

    发明人： Kimihiro Matsuse

    IPC分类号： A01J2702

    CPC分类号： C23C16/45574 ,  C23C16/45519 ,  C23C16/45561 ,  C23C16/4584

    摘要： A film forming apparatus and method of the present invention include a substrate holding section for holding a plurality of substrates in a plane within a chamber, first and second process gas discharge sections provided opposite to the substrate holding section to discharge first and second process gases, a rotation mechanism for rotating the substrate holder, and a heater for heating the substrates. While the substrates are rotating as the substrate holding section rotates, the substrate holding section, first and second mono atomic layers are alternately stacked on the corresponding substrates. A compound film is therefore formed through a reaction involved under heating.

    摘要翻译： 本发明的成膜装置和方法包括用于将多个基板保持在室内的平面中的基板保持部分，与基板保持部分相对设置的第一和第二处理气体排出部分，用于排出第一和第二处理气体， 用于旋转衬底保持器的旋转机构和用于加热衬底的加热器。 当基板保持部旋转时基板旋转，基板保持部，第一和第二单原子层交替地堆叠在相应的基板上。 因此，通过加热下涉及的反应形成复合膜。

    Method and apparatus for forming laminated thin films or layers
    6.
    发明授权
    Method and apparatus for forming laminated thin films or layers 失效
    用于形成叠层薄膜或层的方法和装置

    公开(公告)号：US6022586A

    公开(公告)日：2000-02-08

    申请号：US28645

    申请日：1998-02-24

    申请人： Tsuyoshi Hashimoto ,  Kimihiro Matsuse ,  Kazuya Okubo ,  Tsuyoshi Takahashi

    发明人： Tsuyoshi Hashimoto ,  Kimihiro Matsuse ,  Kazuya Okubo ,  Tsuyoshi Takahashi

    IPC分类号： H01L21/28 ,  C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78 ,  C23C16/42

    CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45561

    摘要： Pre-coating films are formed in a pretreatment by supplying first film-forming gases into a process chamber of a process vessel while heating the process chamber so as to form a first pre-coating film on the inner surface of the process vessel exposed to the process chamber, followed by supplying second film-forming gases into the process chamber to form a second pre-coating film on the first pre-coating film. A semiconductor wafer is loaded into the process chamber. Then, the first gases are supplied into the process chamber while heating the process chamber so as to form a first layer on the wafer, followed by supplying the second gases into the process chamber so as to form a second layer on the first layer. A silane gas is supplied into the process chamber to permit silicon material to be deposited on the surface of the second layer stacked on the first layer. Finally, the wafer having the first and second multi-film is unloaded out of the process vessel.

    摘要翻译： 在预处理中，通过将第一成膜气体提供到处理容器的处理室中，同时加热处理室以在暴露于该处理容器的处理容器的内表面上形成第一预涂膜，从而在预处理中形成预涂膜 处理室，然后将第二成膜气体供应到处理室中，以在第一预涂膜上形成第二预涂膜。 将半导体晶片装载到处理室中。 然后，在加热处理室的同时，将第一气体供给到处理室中，以在晶片上形成第一层，然后将第二气体供应到处理室中，以在第一层上形成第二层。 将硅烷气体供应到处理室中以允许硅材料沉积在堆叠在第一层上的第二层的表面上。 最后，将具有第一和第二多层膜的晶片从处理容器中卸载出来。

    Heat treatment apparatus
    7.
    发明授权
    Heat treatment apparatus 失效
    热处理设备

    公开(公告)号：US5997651A

    公开(公告)日：1999-12-07

    申请号：US729287

    申请日：1996-10-10

    申请人： Kimihiro Matsuse ,  Tsuyoshi Hashimoto ,  Mitsuhiro Tachibana

    发明人： Kimihiro Matsuse ,  Tsuyoshi Hashimoto ,  Mitsuhiro Tachibana

    IPC分类号： H01L21/285 ,  C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  H01L21/205 ,  H01L21/26 ,  H01L21/31 ,  H01L21/683 ,  C23C16/00

    CPC分类号： C23C16/45521 ,  C23C16/455 ,  C23C16/481

    摘要： A heat treatment apparatus includes a treatment container having a reaction chamber, and a gas chamber a mount table provided in the treatment container for mounting thereon a wafer such that an upper surface of the wafer is exposed to the reaction chamber, and an annular clamp member provided in the reaction chamber, movable between a clamp position in which it contacts the peripheral edge of the wafer in circular line contact and a waiting position in which it is separated from the wafer. The line contact prevents leakage of the process gas from the reaction chamber through a clearance between the clamp member and the wafer.

    摘要翻译： 热处理设备包括具有反应室的处理容器和设置在处理容器中的安装台的气室，用于将晶片的上表面暴露于反应室，并将环形夹紧构件 设置在反应室中，可在其与圆形接触的晶片的周边边缘接触的夹持位置与其与晶片分离的等待位置之间移动。 线接触防止工艺气体从夹紧构件和晶片之间的间隙从反应室泄漏。

    Treating method
    9.
    发明授权
    Treating method 失效
    治疗方法

    公开(公告)号：US4913790A

    公开(公告)日：1990-04-03

    申请号：US326689

    申请日：1989-03-21

    申请人： Tomonori Narita ,  Kimihiro Matsuse

    发明人： Tomonori Narita ,  Kimihiro Matsuse

    IPC分类号： C23C14/02 ,  C23C14/54 ,  C23C16/02 ,  C23C16/48 ,  H01J37/32

    CPC分类号： H01J37/32935 ,  C23C14/02 ,  C23C14/541 ,  C23C16/0209 ,  C23C16/481

    摘要： A workpiece treating method includes a temperature rise step in which first temperature control is performed and a treatment step in which second temperature control is performed and is adapted to treat a workpiece whose emissivity of infrared rays in the temperature rise step is different from that in the treatment step. In the temperature rise step, the temperature of the workpiece is detected by a non-contact type temperature detecting means so as to perform the first temperature control. In the treatment step, the temperature of the workpiece is detected by a contact type temperature detecting means so as to perform the second temperature control.

    摘要翻译： 工件处理方法包括进行第一温度控制的升温步骤和进行第二温度控制的处理步骤，并且适于处理在升温步骤中的红外线的发射率不同于 治疗步骤。 在升温步骤中，通过非接触型温度检测装置检测工件的温度，以进行第一温度控制。 在处理步骤中，通过接触型温度检测装置检测工件的温度，以进行第二温度控制。

    Method of forming a metal film for electrode
    10.
    发明授权
    Method of forming a metal film for electrode 失效
    形成电极用金属膜的方法

    公开(公告)号：US07829144B2

    公开(公告)日：2010-11-09

    申请号：US11032060

    申请日：2005-01-11

    申请人： Kimihiro Matsuse ,  Hayashi Otsuki

    发明人： Kimihiro Matsuse ,  Hayashi Otsuki

    IPC分类号： C23C16/00

    CPC分类号： H01L21/76843 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76877 ,  H01L23/53238 ,  H01L29/4941 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a refractory metal film doped with III or V group elements. The first process gas is supplied from a first gas source through a first gas introducing member to and through a gas supply mechanism toward a substrate within a processing vessel. The second process gas is supplied from a second gas source through a second gas introducing member to and through the gas supply mechanism toward the substrate within the processing vessel. The processing vessel is purged by evacuating the processing vessel by an evacuating mechanism, while supplying the inert gas from a third source through a third gas introducing member to and through the gas supply mechanism into the processing vessel. The supplying the first process gas and the supplying the second process gas are repeated with the supplying the purging gas being carried out between supplying the first and second gases performed so that residual gas present in the processing vessel after performing the supplying of the first and second process gases is reduced to a level of 1 to 30% based on the entire capacity of the processing vessel.

    摘要翻译： 形成掺杂有III族或V族元素的难熔金属膜的方法。 第一工艺气体从第一气体源通过第一气体引入构件供应到处理容器内并通过气体供给机构朝向衬底。 第二工艺气体从第二气体源通过第二气体引入构件经过气体供给机构向处理容器内的衬底提供。 通过抽空机构抽空处理容器，同时通过第三气体引入构件将惰性气体从第三源供给到气体供给机构并进入处理容器，从而对处理容器进行吹扫。 重复提供第一处理气体和供应第二处理气体，同时供应在供应第一和第二气体之间进行的净化气体，使得在执行第一和第二气体供应之后存在于处理容器中的残留气体 处理气体基于处理容器的整个容量降低至1至30％的水平。