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公开(公告)号：US11996438B1
公开(公告)日：2024-05-28
申请号：US17552345
申请日：2021-12-15
发明人： Somilkumar J. Rathi , Noriyuki Sato , Niloy Mukherjee , Rajeev Kumar Dokania , Amrita Mathuriya , Tanay Gosavi , Pratyush Pandey , Jason Y. Wu , Sasikanth Manipatruni
摘要： A device includes, in a first region, a first conductive interconnect, an electrode structure on the first conductive interconnect, where the electrode structure includes a first conductive hydrogen barrier layer and a first conductive fill material. A trench capacitor including a ferroelectric material or a paraelectric material is on the electrode structure. A second dielectric includes an amorphous, greater than 90% film density hydrogen barrier material laterally surrounds the memory device. A via electrode including a second conductive hydrogen barrier material is on at least a portion of the memory device. A second region includes a conductive interconnect structure embedded within a less than 90% film density dielectric material.
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2.发明公开公开(公告)号：US20230298905A1
公开(公告)日：2023-09-21
申请号：US17649673
申请日：2022-02-01
发明人： Niloy Mukherjee , Somilkumar J. Rathi , Jason Y. Wu , Pratyush Pandey , Zeying Ren , FNU Atiquzzaman , Gabriel Antonio Paulius Velarde , Noriyuki Sato , Mauricio Manfrini , Tanay Gosavi , Rajeev Kumar Dokania , Amrita Mathuriya , Ramamoorthy Ramesh , Sasikanth Manipatruni
IPC分类号： H01L21/324 , H01L21/768 , H01L27/11507 , H01L49/02 , H01L45/00
CPC分类号： H01L21/324 , H01L21/76832 , H01L27/11507 , H01L28/57 , H01L28/65 , H01L28/75 , H01L45/147
摘要： A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.
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公开(公告)号：US12094923B2
公开(公告)日：2024-09-17
申请号：US17649534
申请日：2022-01-31
发明人： Niloy Mukherjee , Somilkumar J. Rathi , Jason Y. Wu , Pratyush Pandey , Zeying Ren , Fnu Atiquzzaman , Gabriel Antonio Paulius Velarde , Noriyuki Sato , Mauricio Manfrini , Tanay Gosavi , Rajeev Kumar Dokania , Amrita Mathuriya , Ramamoorthy Ramesh , Sasikanth Manipatruni
IPC分类号： H10B53/30 , H01L21/324 , H01L21/768 , H01L49/02 , H10N70/00
CPC分类号： H01L28/57 , H01L21/324 , H01L21/76832 , H01L28/65 , H01L28/75 , H10B53/30 , H10N70/8836
摘要： A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.
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公开(公告)号：US11908704B2
公开(公告)日：2024-02-20
申请号：US17649673
申请日：2022-02-01
发明人： Niloy Mukherjee , Somilkumar J. Rathi , Jason Y. Wu , Pratyush Pandey , Zeying Ren , Fnu Atiquzzaman , Gabriel Antonio Paulius Velarde , Noriyuki Sato , Mauricio Manfrini , Tanay Gosavi , Rajeev Kumar Dokania , Amrita Mathuriya , Ramamoorthy Ramesh , Sasikanth Manipatruni
IPC分类号： H01L21/324 , H01L21/768 , H01L23/522 , H01L23/532 , H10B53/30 , H10N70/00 , H01L21/02 , H01L49/02
CPC分类号： H01L21/324 , H01L21/76832 , H01L28/57 , H01L28/65 , H01L28/75 , H10B53/30 , H10N70/8836
摘要： A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.
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5.发明公开公开(公告)号：US20230246063A1
公开(公告)日：2023-08-03
申请号：US17649665
申请日：2022-02-01
发明人： Niloy Mukherjee , Somilkumar J. Rathi , Jason Y. Wu , Pratyush Pandey , Zeying Ren , FNU Atiquzzaman , Gabriel Antonio Paulius Velarde , Noriyuki Sato , Mauricio Manfrini , Tanay Gosavi , Rajeev Kumar Dokania , Amrita Mathuriya , Ramamoorthy Ramesh , Sasikanth Manipatruni
IPC分类号： H01L49/02 , H01L21/324 , H01L21/768 , H01L27/11507 , H01L45/00
CPC分类号： H01L28/57 , H01L21/324 , H01L21/76832 , H01L27/11507 , H01L28/65 , H01L28/75 , H01L45/147
摘要： A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.
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公开(公告)号：US12034086B1
公开(公告)日：2024-07-09
申请号：US17552269
申请日：2021-12-15
发明人： Somilkumar J. Rathi , Noriyuki Sato , Niloy Mukherjee , Rajeev Kumar Dokania , Amrita Mathuriya , Tanay Gosavi , Pratyush Pandey , Jason Y. Wu , Sasikanth Manipatruni
IPC分类号： H10B53/30 , H01L21/768 , H01L23/522 , H01L29/94 , H01L49/02
CPC分类号： H01L29/945 , H01L21/76834 , H01L21/7687 , H01L21/76877 , H01L23/5223 , H01L23/5226 , H01L28/57 , H01L28/65 , H01L28/75 , H10B53/30
摘要： A device includes, in a first region, a first conductive interconnect, an electrode structure on the first conductive interconnect, where the electrode structure includes a first conductive hydrogen barrier layer and a first conductive fill material. A trench capacitor including a ferroelectric material or a paraelectric material is on the electrode structure. A second dielectric includes an amorphous, greater than 90% film density hydrogen barrier material laterally surrounds the memory device. A via electrode including a second conductive hydrogen barrier material is on at least a portion of the memory device. A second region includes a conductive interconnect structure embedded within a less than 90% film density dielectric material.
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公开(公告)号：US11961877B1
公开(公告)日：2024-04-16
申请号：US17550899
申请日：2021-12-14
发明人： Somilkumar J. Rathi , Noriyuki Sato , Niloy Mukherjee , Rajeev Kumar Dokania , Amrita Mathuriya , Tanay Gosavi , Pratyush Pandey , Jason Y. Wu , Sasikanth Manipatruni
CPC分类号： H01L28/57 , H01L28/65 , H01L28/75 , H10B53/30 , G11C11/221
摘要： A device includes, in a first region, a first conductive interconnect, an electrode structure on the first conductive interconnect, where the electrode structure includes a first conductive hydrogen barrier layer and a first conductive fill material. A trench capacitor including a ferroelectric material or a paraelectric material is on the electrode structure. A second dielectric includes an amorphous, greater than 90% film density hydrogen barrier material laterally surrounds the memory device. A via electrode including a second conductive hydrogen barrier material is on at least a portion of the memory device. A second region includes a conductive interconnect structure embedded within a less than 90% film density dielectric material.
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公开(公告)号：US11769790B2
公开(公告)日：2023-09-26
申请号：US17649665
申请日：2022-02-01
发明人： Niloy Mukherjee , Somilkumar J. Rathi , Jason Y. Wu , Pratyush Pandey , Zeying Ren , Fnu Atiquzzaman , Gabriel Antonio Paulius Velarde , Noriyuki Sato , Mauricio Manfrini , Tanay Gosavi , Rajeev Kumar Dokania , Amrita Mathuriya , Ramamoorthy Ramesh , Sasikanth Manipatruni
IPC分类号： H01L23/522 , H01L23/532 , H01L23/535 , H01L23/538 , H01L49/02 , H01L21/324 , H01L21/768 , H10B53/30 , H10N70/00
CPC分类号： H01L28/57 , H01L21/324 , H01L21/76832 , H01L28/65 , H01L28/75 , H10B53/30 , H10N70/8836
摘要： A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.
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9.发明公开公开(公告)号：US20230246064A1
公开(公告)日：2023-08-03
申请号：US17649899
申请日：2022-02-03
发明人： Niloy Mukherjee , Somilkumar J. Rathi , Jason Y. Wu , Pratyush Pandey , Zeying Ren , FNU Atiquzzaman , Gabriel Antonio Paulius Velarde , Noriyuki Sato , Mauricio Manfrini , Tanay Gosavi , Rajeev Kumar Dokania , Amrita Mathuriya , Ramamoorthy Ramesh , Sasikanth Manipatruni
IPC分类号： H01L49/02 , H01L21/324 , H01L21/768 , H01L27/11507 , H01L45/00
CPC分类号： H01L28/75 , H01L21/324 , H01L21/76832 , H01L27/11507 , H01L28/57 , H01L28/65 , H01L45/147
摘要： A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.
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公开(公告)号：US12029043B1
公开(公告)日：2024-07-02
申请号：US17552330
申请日：2021-12-15
发明人： Somilkumar J. Rathi , Noriyuki Sato , Niloy Mukherjee , Rajeev Kumar Dokania , Amrita Mathuriya , Tanay Gosavi , Pratyush Pandey , Jason Y. Wu , Sasikanth Manipatruni
IPC分类号： H10B53/30
CPC分类号： H10B53/30
摘要： A device includes, in a first region, a first conductive interconnect, an electrode structure on the first conductive interconnect, where the electrode structure includes a first conductive hydrogen barrier layer and a first conductive fill material. A trench capacitor including a ferroelectric material or a paraelectric material is on the electrode structure. A second dielectric includes an amorphous, greater than 90% film density hydrogen barrier material laterally surrounds the memory device. A via electrode including a second conductive hydrogen barrier material is on at least a portion of the memory device. A second region includes a conductive interconnect structure embedded within a less than 90% film density dielectric material.
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