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公开(公告)号:US20120314264A1
公开(公告)日:2012-12-13
申请号:US13369035
申请日:2012-02-08
Applicant: Keisuke KIMURA
Inventor: Keisuke KIMURA
IPC: H04N1/04
CPC classification number: H04N1/0282 , G03B15/03 , G03B17/561 , H04N1/10 , H04N1/193 , H04N5/2256 , H04N5/2259 , H04N2201/0436
Abstract: An image reading apparatus includes a main body, a rotation unit supported on the main body so as to be rotatable around a rotation axis, an imaging unit that is mounted on the rotation unit at an outward position in a radial direction of the rotation axis and images a medium to be read that is placed on a placement surface located under the rotation unit in the vertical direction, and a light source that irradiates the medium to be read with light. The light source and the imaging unit can be arranged with a relative positional relationship capable of suppressing specular reflected light of light that is emitted from the light source and reflected by the medium to be read from being incident on the imaging unit.
Abstract translation: 一种图像读取装置,包括主体,旋转单元,其以旋转轴为中心可旋转地支撑在主体上,成像单元,其安装在旋转单元的旋转轴的径向外侧位置, 将被放置在位于旋转单元下方的放置表面的待读取介质沿垂直方向成像,以及用光照射要读取的介质的光源。 光源和成像单元可以布置成能够抑制从光源发射并被要读取的介质反射的光的镜面反射光入射在成像单元上的相对位置关系。
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公开(公告)号:US20110176185A1
公开(公告)日:2011-07-21
申请号:US12797972
申请日:2010-06-10
Applicant: Shogo MIYANO , Keisuke KIMURA
Inventor: Shogo MIYANO , Keisuke KIMURA
CPC classification number: H04N1/121 , B65H5/38 , B65H2404/611 , H04N1/0057 , H04N1/00588 , H04N1/00591 , H04N1/00602 , H04N1/00615 , H04N1/0062 , H04N1/1235 , H04N2201/0081
Abstract: In a paper feed port configured to feed a sheet-like medium to a conveyance path, an inclined surface is provided at both ends of an opening into which the medium to be fed is inserted, with respect to a width direction crossing a paper feed direction of the medium, such that an abutting angle between the inclined surface and a leading end of the medium on a downstream side in the paper feed direction is an acute angle.
Abstract translation: 在被配置为将片状介质输送到输送路径的供纸口中,相对于穿过供纸方向的宽度方向,在被供给的介质插入的开口的两端设置倾斜面 使得在进纸方向上的下游侧的倾斜表面和介质的前端之间的邻接角度是锐角。
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公开(公告)号:US20150380536A1
公开(公告)日:2015-12-31
申请号:US14766023
申请日:2013-02-13
Applicant: Keisuke KIMURA , Satoru KAMEYAMA
Inventor: Keisuke KIMURA , Satoru KAMEYAMA
IPC: H01L29/739 , H01L29/06 , H01L29/08 , H01L29/10
CPC classification number: H01L29/7397 , H01L27/0727 , H01L27/0761 , H01L29/0696 , H01L29/0834 , H01L29/1095
Abstract: A semiconductor device in which an element region including at least an IGBT region is formed on a semiconductor substrate is presented. The IGBT region including: a collector layer; a drift layer; a body layer; a gate electrode placed inside a trench extending from the front surface of the semiconductor substrate to the drift layer; an emitter layer; and a contact layer having a higher impurity concentration than the body layer. In the semiconductor device, assuming that an x direction is a direction in which the trench extends along the front surface of the semiconductor substrate and that a y direction is a direction orthogonal to the x direction along the front surface of the semiconductor substrate, a distance from the contact layer to the emitter layer in the x direction is larger than a distance from the contact layer to the trench in the y direction.
Abstract translation: 提出了在半导体衬底上形成至少包含IGBT区域的元件区域的半导体器件。 IGBT区域包括:集电极层; 漂移层 身体层 位于从所述半导体衬底的前表面延伸到所述漂移层的沟槽内的栅电极; 发射极层; 以及具有比体层更高的杂质浓度的接触层。 在半导体器件中,假设x方向是沟槽沿着半导体衬底的前表面延伸的方向,并且ay方向是沿着半导体衬底的前表面与x方向正交的方向,距离 沿x方向到发射极层的接触层大于在y方向上从接触层到沟槽的距离。
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公开(公告)号:US20120320432A1
公开(公告)日:2012-12-20
申请号:US13464742
申请日:2012-05-04
Applicant: Keisuke KIMURA
Inventor: Keisuke KIMURA
IPC: H04N1/04
CPC classification number: H04N1/00535 , H04N1/00814 , H04N1/00997 , H04N1/193 , H04N2201/0436 , H04N2201/0444
Abstract: An overhead scanner includes a main body, a rotation unit supported by the main body and being rotatable around a rotation axis, an imaging unit mounted on the rotation unit and is configured to read a medium placed on a placement surface below the rotation unit, a light source that irradiates the medium with light, a driving unit that moves the rotation unit around the rotation axis toward a placement side, where the medium is placed, and a posture change detecting unit that detects posture change of the main body. When it is determined that the main body falls down based on the posture change detected, while the rotation unit is located at a readable position for reading the medium, the driving unit moves the rotation unit toward the standby position where the rotation unit is located when the imaging unit does not read the medium.
Abstract translation: 顶置式扫描仪包括:主体,由主体支撑并可围绕旋转轴旋转的旋转单元;安装在旋转单元上的成像单元,用于读取放置在旋转单元下方的放置表面上的介质; 用光照射介质的光源;驱动单元,其使旋转单元绕旋转轴线朝向放置介质的放置侧移动;以及姿势变化检测单元,其检测主体的姿势变化。 当确定主体基于检测到的姿态变化而下降时,当旋转单元位于用于读取介质的可读位置时,驱动单元将旋转单元朝向旋转单元所在的待机位置移动, 成像单元不读介质。
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公开(公告)号:US20110273753A1
公开(公告)日:2011-11-10
申请号:US12887291
申请日:2010-09-21
Applicant: Shigeru YONEMURA , Keisuke KIMURA
Inventor: Shigeru YONEMURA , Keisuke KIMURA
IPC: H04N1/04
CPC classification number: H04N1/00543 , H04N1/00535 , H04N1/00631 , H04N1/12 , H04N2201/0081
Abstract: An image reading apparatus includes a lower unit, an upper unit arranged above the lower unit and a guide arranged on an opposite side to the lower unit with respect to the upper unit. The guide relatively rotates with respect to the upper unit in a direction away from the upper unit so as to form an ejection path, between the upper unit and the guide, of a sheet-like medium conveyed between the upper unit and the lower unit. The upper unit and the guide are close to each other respectively, at positions closest to the lower unit in respective rotation ranges of relative rotation with respect to the lower unit. The rotation range of the guide is wider than that of the upper unit, in a rotation direction away from the lower unit from the positions close to each other.
Abstract translation: 图像读取装置包括下部单元,布置在下部单元上方的上部单元和相对于上部单元布置在下部单元的相对侧上的引导件。 引导件相对于上部单元在远离上部单元的方向上相对旋转,以便在上部单元和下部单元之间传送的片状介质之间形成在上部单元和引导件之间的排出路径。 上部单元和引导件在相对于下部单元的相对旋转的相应旋转范围内分别靠近彼此靠近下部单元的位置。 引导件的旋转范围比上部单元的旋转范围在远离下部单元的旋转方向远离彼此靠近的位置。
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公开(公告)号:US20160005844A1
公开(公告)日:2016-01-07
申请号:US14767370
申请日:2013-02-13
Applicant: Keisuke KIMURA , Satoru KAMEYAMA , Masaki KOYAMA , Sachiko AOI
Inventor: Keisuke KIMURA , Satoru KAMEYAMA , Masaki KOYAMA , Sachiko AOI
IPC: H01L29/739 , H01L27/06 , H01L29/10
CPC classification number: H01L29/7397 , H01L27/0629 , H01L27/0664 , H01L29/0696 , H01L29/0834 , H01L29/1095
Abstract: A semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate is disclosed. The IGBT region includes: a body layer of a first conductivity type that is formed on a front surface of the semiconductor substrate; a body contact layer of the first conductivity type that is partially formed on a front surface of the body layer and has a higher impurity concentration of the first conductivity type than the body layer; an emitter layer of a second conductivity type that is partially formed on the front surface of the body layer; a drift layer; a collector layer; and a gate electrode. In the semiconductor device, a part of the body contact layer placed at a long distance from the diode region is made larger than a part of the body contact layer placed at a short distance from the diode region.
Abstract translation: 公开了在一个半导体衬底上形成IGBT区域和二极管区域的半导体器件。 IGBT区域包括:形成在半导体衬底的前表面上的第一导电类型的主体层; 所述第一导电类型的体接触层部分地形成在所述主体层的前表面上,并且具有比所述主体层更高的第一导电类型的杂质浓度; 第二导电类型的发射极层,部分地形成在所述主体层的前表面上; 漂移层 收集层; 和栅电极。 在半导体器件中,与二极管区域长距离放置的身体接触层的一部分被制成大于放置在与二极管区域相距很短距离的身体接触层的一部分。
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公开(公告)号:US20120104612A1
公开(公告)日:2012-05-03
申请号:US13345165
申请日:2012-01-06
Applicant: Keisuke KIMURA
Inventor: Keisuke KIMURA
IPC: H01L23/48 , H01L21/768
CPC classification number: H01L29/456 , H01L23/051 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L29/41741 , H01L29/7397 , H01L2224/04026 , H01L2224/0508 , H01L2224/05111 , H01L2224/05124 , H01L2224/05553 , H01L2224/05554 , H01L2224/05566 , H01L2224/05567 , H01L2224/05655 , H01L2224/0603 , H01L2224/32245 , H01L2224/33181 , H01L2924/00014 , H01L2924/0002 , H01L2924/01004 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/1305 , H01L2924/13055 , H01L2924/3511 , H01L2924/00 , H01L2224/05552
Abstract: A semiconductor device has: a semiconductor substrate; and an upper surface electrode laminated on an upper surface of the semiconductor substrate, wherein at least one portion of the upper surface electrode includes a first layer formed on an upper surface side of the semiconductor substrate, a second layer formed on an upper surface side of the first layer, a third layer in contact with the upper surface of the second layer, and a fourth layer formed on an upper surface side of the third layer. The first layer is a barrier metal layer. The second layer is an Al (aluminum) layer. The third layer is one of an Al—Si (aluminum-silicon alloy) layer, an Al—Cu (aluminum-copper alloy) layer and an Al—Si—Cu (aluminum-silicon-copper alloy) layer. The fourth layer is a solder joint layer.
Abstract translation: 半导体器件具有:半导体衬底; 以及层叠在所述半导体衬底的上表面上的上表面电极,其中所述上表面电极的至少一部分包括形成在所述半导体衬底的上表面侧上的第一层,形成在所述半导体衬底的上表面侧上的第二层 第一层,与第二层的上表面接触的第三层,以及形成在第三层的上表面侧上的第四层。 第一层是阻挡金属层。 第二层是Al(铝)层。 第三层是Al-Si(铝 - 硅合金)层,Al-Cu(铝 - 铜合金)层和Al-Si-Cu(铝 - 硅 - 铜合金)层之一。 第四层是焊接层。
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公开(公告)号:US20160372584A1
公开(公告)日:2016-12-22
申请号:US15104073
申请日:2014-09-08
Applicant: Keisuke KIMURA , Satoru KAMEYAMA
Inventor: Keisuke KIMURA , Satoru KAMEYAMA
IPC: H01L29/739 , H01L29/06 , H01L29/861 , H01L29/08
CPC classification number: H01L29/7397 , H01L29/0649 , H01L29/0834 , H01L29/407 , H01L29/861
Abstract: A semiconductor device includes a main IGBT region in which an IGBT is provided, a main diode region in which a diode is provided, a sense IGBT region in which an IGBT is provided, and a sense diode region in which a diode is provided. A clearance between the body region and the anode region is longer than a product of electron mobility and electron lifetime in the n-type region between the body region and the anode region. A clearance between an end of the collector region on a sense diode region side and the body region is longer than a product of electron mobility and electron lifetime in the n-type region between the end and the body region.
Abstract translation: 半导体器件包括其中设置有IGBT的主IGBT区域,设置二极管的主二极管区域,设置有IGBT的感测IGBT区域和设置有二极管的感测二极管区域。 身体区域和阳极区域之间的间隙比在体区域和阳极区域之间的n型区域中的电子迁移率和电子寿命的乘积长。 在感测二极管区域侧的集电极区域的端部与体区域之间的间隙比在端部和体区域之间的n型区域中的电子迁移率和电子寿命的乘积长。
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公开(公告)号:US20110170149A1
公开(公告)日:2011-07-14
申请号:US12825397
申请日:2010-06-29
Applicant: Keisuke KIMURA
Inventor: Keisuke KIMURA
CPC classification number: B65H29/58 , B65H2301/142 , B65H2403/51 , B65H2403/541 , B65H2404/153 , B65H2404/63 , B65H2511/414 , B65H2511/51 , B65H2511/515 , B65H2513/108 , B65H2515/32 , B65H2801/39 , G03G15/6529 , G03G15/6555 , H04N1/0057 , H04N1/00591 , H04N1/00602 , H04N1/00612 , H04N1/12 , H04N1/193 , H04N2201/0081 , B65H2220/02 , B65H2220/11 , B65H2220/01
Abstract: A conveying device, comprising: a linear conveyance route on which a sheet-like medium is linearly conveyable; a bent conveyance route that is branched from the linear conveyance route and on which the medium is conveyable in a bent manner; a switching member provided at the branched portion and movable into a bent conveyance position for guiding the medium to the bent conveyance route and into a linear conveyance position for guiding the medium to the linear conveyance route, according to a force acting from the medium at a time of coming in contact with the medium; and a variable pressurizing unit configured to make a force acting on the medium from the switching member in the linear conveyance position smaller than a force acting on the medium from the switching member in the bent conveyance position.
Abstract translation: 一种输送装置,其特征在于,包括:线状输送路径,片状介质可线性输送; 弯曲的输送路径,其从线性输送路径分支并且介质可以弯曲方式输送; 切换构件,其设置在所述分支部并且可移动到弯曲输送位置,用于将所述介质引导到所述弯曲输送路径,并且根据在所述线性输送路径处的介质作用的力将所述介质引导到所述线性输送路径; 与媒体接触的时间; 以及可变加压单元,其构造成使得在直线运送位置中从切换构件作用在介质上的力小于在弯曲输送位置中从切换构件作用在介质上的力。
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