摘要:
In a SiC pn diode, the lifetime is controlled by electron beam irradiation of about 3×1013 cm−2 or more. As a result of the life time control, as shown by a current-voltage characteristic (K10) in FIG. 1, the current started to flow at about 32 V and the on-voltage at an applied current of 100 A was 50 V in the SiC pn diode. In this case, the SiC pn diode has a resistance of 0.5Ω when the SiC pn diode is turned on. The conducting region of the SiC pn diode is 0.4 cm2, and is reduced to 0.2 Ωcm2 by increasing the on-resistance by the lifetime control. Therefore, for instance, in an electric circuit device using a diode and a resistor connected in series in prior arts, the resistor can be eliminated.
摘要翻译:在SiC pn二极管中,寿命由大约3×1013 cm -2以上的电子束照射控制。 作为寿命控制的结果,如图1中的电流 - 电压特性(K10)所示。 如图1所示,电流在大约32V开始流动,并且在SiC pn二极管中在100A的施加电流下的导通电压为50V。 在这种情况下,SiC pn二极管的电阻为0.5&OHgr; 当SiC pn二极管导通时。 SiC pn二极管的导电区域为0.4平方厘米,通过寿命控制增加导通电阻,将其减小到0.2和OHgr。 因此,例如,在现有技术中使用二极管和电阻串联连接的电路装置中,可以消除电阻。
摘要:
A controller is formed as one chip, and controls a voltage regulator that supplies a power supply voltage to a CPU. The controller includes: an input unit for receiving a monitor voltage for monitoring the power supply voltage applied to the CPU; a control unit for detecting that the power supply voltage is decreased to a target voltage by the monitor voltage with the voltage regulator being in OFF state in a discharge mode; and an output unit for outputting a result signal indicating to make transition to a normal mode, when the power supply voltage has reached the target voltage. The control unit includes a calculation circuit, which is operated in accordance with a program. The calculation circuit is provided between the input unit and the output unit.
摘要:
A composite oxide with a high oxygen storage capacity is provided without using cerium. The composite oxide is an iron oxide-zirconia composite oxide containing iron, zirconium, and a rare-earth element. The total content of Fe2O3, ZrO2, and an oxide of the rare-earth element is not less than 90 mass %, the content of an iron oxide in terms of Fe2O3 is 10 to 90 mass %, and the absolute value of the covariance COV(Fe, Zr+X) of the composite oxide, which has been baked in the atmosphere at a temperature of greater than or equal to 900° C. for 5 hours or more, is not greater than 20.
摘要:
There are included a communication part performing communication with other device; a command managing part transmitting a command of an own device to other device and receiving a command of other device to acquire the command of other device by the communication part, and managing the command of the own device and the command of other device; and a command processing part executing processing of a function corresponding to the command of the own device by the own device when a command selected from the commands managed by the command managing part is the command of the own device, and executing processing of a function corresponding to the command of other device by the other device when the command selected is the command of the other device.
摘要:
A management apparatus for managing a content display change time on a display apparatus and content information to be transmitted to a terminal determines the content information to be transmitted to the terminal on the basis of a reception time of a content information request command transmitted from the terminal and the content display change time on the display apparatus.
摘要:
A thin film transistor includes: a substrate; and, on the substrate, an oxide semiconductor film which serves as an active layer and contains In, Ga, and Zn, a gate electrode, a gate insulating film, a source electrode, and a drain electrode, wherein, when a molar ratio of In, Ga, and Zn in the oxide semiconductor film is expressed as In:Ga:Zn=(2.0−x):x:y, wherein 0.0
摘要:
A developing member is disclosed which can lessen the occurring of banding. The developing member has a shaft member, an elastic layer provided on the shaft member, and a resin layer provided on the surface, wherein the resin layer contains a urethane resin and a non-reactive silicone compound, and the non-reactive silicone compound has a polyether moiety whose total number of carbon atoms ranges from 3 to 9.
摘要:
Included are a nano-carbon material production unit for producing a nano-carbon material using a fluidized catalyst formed by granulating a carrier supporting an active component, an acid treatment unit for dissolving and separating a catalyst by an acid solution by feeding a catalyst-containing nano-carbon material into the acid solution, and a pH adjustment unit, which is an anti-agglomeration treatment unit, provided on a downstream side of the acid treatment unit, for performing an anti-agglomeration treatment to prevent agglomeration among nano-carbons due to repulsion caused by dissociation among oxygen-containing functional groups added to the nano-carbon material.
摘要:
A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.
摘要:
The present invention provides a wrinkle-removing composition capable of removing wrinkles in fiber products without deteriorating the texture, even if heat treatment such as ironing and steam pressing is not carried out. The present relates to a wrinkle-removing composition containing an alkylene oxide adduct (a) represented by a specific general formula (1) or a general formula (2) or (3), as well as a method of removing wrinkles in fiber products, which includes applying the wrinkle-removing composition onto fiber products.