APPARATUS AND METHOD FOR GRAPHENE WET TRANSFER
    5.
    发明申请
    APPARATUS AND METHOD FOR GRAPHENE WET TRANSFER 有权
    用于石墨转移的装置和方法

    公开(公告)号:US20170028692A1

    公开(公告)日:2017-02-02

    申请号:US15044586

    申请日:2016-02-16

    Abstract: Disclosed is an apparatus for graphene wet transfer, which includes: a reservoir body having at least two reservoirs; a barrier structure located on the reservoir and having at least one separated space formed by barriers; and a substrate frame located below the barrier structure and having at least one substrate accommodation groove for accommodating a target substrate to which graphene is transferred. Here, each reservoir may be filled with a solution for a wet transfer process, and the graphene may be separately located in each separated space in a floating state in the solution.

    Abstract translation: 公开了一种用于石墨烯湿转移的装置,其包括:具有至少两个储存器的储存器主体; 阻挡结构,位于储存器上并且具有至少一个由屏障形成的分离空间; 以及位于所述阻挡结构下方的衬底框架,并具有用于容纳转印有石墨烯的目标衬底的至少一个衬底容纳槽。 这里,每个储存器可以填充用于湿转印工艺的溶液,并且石墨烯可以在溶液中以浮置状态分开地位于每个分离的空间中。

    MULTIPLEXING DETECTION SYSTEM OF DUAL GATE ION-SENSITIVE FIELD-EFFECT TRANSISTOR SENSOR
    6.
    发明申请
    MULTIPLEXING DETECTION SYSTEM OF DUAL GATE ION-SENSITIVE FIELD-EFFECT TRANSISTOR SENSOR 审中-公开
    双门敏感场效应晶体管传感器多重检测系统

    公开(公告)号:US20160202208A1

    公开(公告)日:2016-07-14

    申请号:US14925172

    申请日:2015-10-28

    CPC classification number: G01N27/4145

    Abstract: A multiplexing detection system of a dual gate ion-sensitive field effect transistor bio sensor of the present invention includes: a first dual gate ion-sensitive field effect transistor bio sensor; and a second dual gate ion-sensitive field effect transistor bio sensor, wherein a first bio signal is sensed through the first dual gate ion-sensitive field effect transistor bio sensor, and a second bio signal is sensed through the second dual gate ion-sensitive field effect transistor bio sensor, and the first bio signal and the second bio signal are different in type from each other.

    Abstract translation: 本发明的双栅离子敏感场效应晶体管生物传感器的复用检测系统包括:第一双栅极离子敏感场效应晶体管生物传感器; 以及第二双栅极离子敏感场效应晶体管生物传感器,其中通过第一双栅离子敏感场效应晶体管生物传感器感测第一生物信号,并且通过第二双栅离子敏感感测第二生物信号 场效应晶体管生物传感器,第一生物信号和第二生物信号的类型彼此不同。

    PLASMONIC ALL-OPTICAL SWITCH AND LIGHT CONTROL METHOD USING THE SAME
    7.
    发明申请
    PLASMONIC ALL-OPTICAL SWITCH AND LIGHT CONTROL METHOD USING THE SAME 有权
    等离子全光开关和使用其的光控制方法

    公开(公告)号:US20160018675A1

    公开(公告)日:2016-01-21

    申请号:US14533297

    申请日:2014-11-05

    Abstract: A plasmonic all-optical switch includes a graphene layer, a first dielectric layer located on the graphene layer, a nano-antenna located on the first dielectric layer, and a second dielectric layer located on the nano-antenna. An incident beam is propagated by means of a surface plasmon wave generated at an interface between the graphene layer and the first dielectric layer. Further, localized surface plasmon resonance is selectively generated at an interface between the nano-antenna and the second dielectric layer by means of a pump beam incident to the nano-antenna to decrease an intensity of the incident beam. The plasmonic all-optical switch may operate at an ultrahigh speed just with a small light energy without any electric method, greatly reduce power consumption of an IT device by applying to an all-optical transistor or the like, and increase a processing rate.

    Abstract translation: 等离子体全光开关包括石墨烯层,位于石墨烯层上的第一电介质层,位于第一电介质层上的纳米天线和位于纳米天线上的第二电介质层。 入射光束通过在石墨烯层和第一介电层之间的界面处产生的表面等离子体波传播。 此外,通过入射到纳米天线的泵浦光束在纳米天线和第二介电层之间的界面选择性地产生局部表面等离子体共振,以降低入射光束的强度。 等离子体全光开关可以在没有任何电气方式的情况下以超轻的光能运行,通过施加到全光晶体管等来大大降低IT设备的功耗,并且提高处理速率。

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