公开(公告)号：US20220336602A1

公开(公告)日：2022-10-20

申请号：US17641427

申请日：2020-08-31

Applicant: KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE

Inventor： Jeong Hyun MOON ,  In-Ho KANG ,  Sang Cheol KIM ,  Hyoung Woo KIM ,  Moonkyong NA ,  Wook BAHNG ,  Ogyun SEOK

IPC: H01L29/423 ,  H01L29/16 ,  H01L29/10 ,  H01L29/66 ,  H01L21/322

Abstract: The present invention relates to a trench-gate SiC MOSFET device and a manufacturing method therefor. The trench-gate SiC MOSFET device of the present invention comprises: a gate oxide film covering a gate trench formed in a SiC substrate (e.g., an n-type 4H-SiC substrate); a doped well (e.g., BPW) formed in a bottom region of the gate trench; a gate electrode formed in the gate trench covered by the gate oxide film; an interlayer insulating film formed on the gate electrode; a source electrode covering the top surface of a doping layer for a source area formed on the entire surface of an epitaxial layer of the substrate and the top surface of the interlayer insulating film; and a drain electrode formed on the rear surface of the substrate.

公开(公告)号：US20250031407A1

公开(公告)日：2025-01-23

申请号：US18715087

申请日：2022-03-07

Applicant: KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE

Inventor： Hyoung Woo KIM ,  Jeong Hyun MOON ,  Wook BAHNG ,  Jae Hwa SEO

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/266 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66

Abstract: A SiC semiconductor device having high pressure resistance properties is disclosed. The present invention provides a SiC semiconductor device comprising: a SiC substrate having a first surface and a second surface; an insulating area formed on the second surface side inside the SiC substrate; and a plurality of semiconductor areas including a source area, a base area, and a drain area formed along the first surface on the insulating area, wherein the SiC semiconductor device has a P/N junction parallel to the first surface, the P/N junction extending from the base area toward the drain area on the insulating area and being formed by a first auxiliary region of a first conductive type which is the same conductive type as the source area and a second auxiliary region of a second conductive type which is opposed to the first conductive type.