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    HIGHLY REFLECTIVE FLIP CHIP LED DIE
    3.
    发明申请
    HIGHLY REFLECTIVE FLIP CHIP LED DIE 审中-公开
    高反射片芯片LED

    公开(公告)号：US20160155901A1

    公开(公告)日：2016-06-02

    申请号：US14905959

    申请日：2014-07-02

    Applicant: KONINKLIJKE PHILIPS N.V.

    Inventor： Toni Lopez ,  Kwong-Hin Henry Choy

    IPC: H01L33/40 ,  H01L33/46 ,  H01L33/50 ,  H01L33/06 ,  H01L33/32

    CPC classification number: H01L33/405 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/42 ,  H01L33/46 ,  H01L33/502 ,  H01L2933/0025

    Abstract: An LED die (40) includes an N-type layer (18), a P-type layer (22), and an active layer (20) epitaxially grown over a first surface of a transparent growth substrate (46). Light is emitted through a second surface of the substrate opposite the first surface and is wavelength converted by a phosphor layer (30). Openings (42, 44) are etched in the central areas (42) and along the edge (44) of the die to expose the first surface of the substrate (46). A highly reflective metal (50), such as silver, is deposited in the openings and insulated from the metal P-contact. The reflective metal may conduct current for the N-type layer by being electrically connected to an exposed side of the N-type layer along the inside edge of each opening. The reflective metal reflects downward light emitted by the phosphor layer to improve efficiency. The reflective areas provided by the reflective metal may form 10%-50% of the die area.

    Abstract translation: LED管芯（40）包括在透明生长衬底（46）的第一表面上外延生长的N型层（18），P型层（22）和有源层（20）。 光通过与第一表面相对的第二表面发射并被荧光体层（30）波长转换。 在中心区域（42）中并且沿着模具的边缘（44）蚀刻开口（42,44）以暴露衬底（46）的第一表面。 诸如银的高反射金属（50）沉积在开口中并与金属P-接触绝缘。 反射金属可以通过沿着每个开口的内边缘电连接到N型层的露出侧来传导N型层的电流。 反射金属反射由磷光体层发射的向下的光以提高效率。 由反射金属提供的反射区域可以形成模具面积的10％-50％。

    METHOD OF SEPARATING LIGHT EMITTING DEVICES FORMED ON A SUBSTRATE WAFER
    4.
    发明申请
    METHOD OF SEPARATING LIGHT EMITTING DEVICES FORMED ON A SUBSTRATE WAFER 审中-公开
    分离形成在基板上的发光装置的方法

    公开(公告)号：US20160163916A1

    公开(公告)日：2016-06-09

    申请号：US14906539

    申请日：2014-07-02

    Applicant: KONINKLIJKE PHILIPS N.V.

    Inventor： Filip IIievski ,  Norbertus Sweegers ,  Kwong-Hin Henry Choy ,  Marc Andre de Samber

    IPC: H01L33/00

    CPC classification number: H01L33/0095 ,  H01L21/78 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20

    Abstract: A method according to embodiments of the invention includes growing on a first surface of a sapphire substrate a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure is formed into a plurality of LEDs. Cracks are formed in the sapphire substrate. The cracks extend from the first surface of the sapphire substrate and do not penetrate an entire thickness of the sapphire substrate. After forming cracks in the sapphire substrate, the sapphire substrate is thinned from a second surface of the sapphire substrate. The second surface is opposite the first surface.

    Abstract translation: 根据本发明的实施例的方法包括在蓝宝石衬底的第一表面上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 半导体结构形成为多个LED。 在蓝宝石衬底中形成裂纹。 裂纹从蓝宝石衬底的第一表面延伸，并且不穿透蓝宝石衬底的整个厚度。 在蓝宝石衬底中形成裂纹之后，蓝宝石衬底从蓝宝石衬底的第二表面变薄。 第二表面与第一表面相对。

    Control of P-contact resistance in a semiconductor light emitting device
    5.
    发明授权
    Control of P-contact resistance in a semiconductor light emitting device 有权
    控制半导体发光器件中的P接触电阻

    公开(公告)号：US09490131B2

    公开(公告)日：2016-11-08

    申请号：US14762023

    申请日：2014-01-15

    Applicant: KONINKLIJKE PHILIPS N.V.

    Inventor： Kwong-Hin Henry Choy

    IPC: H01L33/00 ,  H01L21/285 ,  H01L33/20 ,  H01L33/14 ,  H01L33/22 ,  H01L33/40 ,  H01L21/324 ,  H01L21/322 ,  H01L21/02

    CPC classification number: H01L33/24 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/28575 ,  H01L21/3228 ,  H01L21/3245 ,  H01L33/0095 ,  H01L33/145 ,  H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L33/40 ,  H01L33/405 ,  H01L2933/0016 ,  H01L2933/0033

    Abstract: A device according to embodiments of the invention includes a semiconductor device structure (10) including a light emitting region (14) disposed between an n-type semiconductor region (16) and a p-type semiconductor region (12). A surface of the p-type semiconductor region (12) perpendicular to a growth direction of the semiconductor device structure (10) includes a first portion and a second portion. The first portion is less conductive than the second portion. The device further includes a p-contact (21) disposed on the p-type semiconductor region (12) and an n-contact (26) disposed on the n-type semiconductor region (16). The p-contact (21) includes a contact metal layer (20) and a blocking material layer (24). The blocking material layer (24) is disposed over the first portion and no blocking material layer (24) is disposed over the second portion.

    Abstract translation: 根据本发明的实施例的装置包括半导体器件结构（10），其包括设置在n型半导体区域（16）和p型半导体区域（12）之间的发光区域（14）。 垂直于半导体器件结构（10）的生长方向的p型半导体区域（12）的表面包括第一部分和第二部分。 第一部分比第二部分导电性差。 该器件还包括设置在p型半导体区域（12）上的p型触点（21）和设置在n型半导体区域（16）上的n型触点（26）。 p触点（21）包括接触金属层（20）和阻挡材料层（24）。 阻挡材料层（24）设置在第一部分上方，并且在第二部分上没有设置阻挡材料层（24）。

    LIGHT EMITTING STRUCTURE AND MOUNT
    10.
    发明申请
    LIGHT EMITTING STRUCTURE AND MOUNT 审中-公开
    发光结构和安装

    公开(公告)号：US20170025470A1

    公开(公告)日：2017-01-26

    申请号：US15287623

    申请日：2016-10-06

    Applicant: KONINKLIJKE PHILIPS N.V.

    Inventor： Kwong-Hin Henry Choy

    IPC: H01L27/15 ,  H01L33/62

    CPC classification number: H01L27/156 ,  H01L33/005 ,  H01L33/38 ,  H01L33/48 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

    Abstract: In a method according to embodiments of the invention, a light emitting structure comprising a plurality of light emitting diodes (LEDs) is provided. Each LED includes a p-contact and n-contact. A first mount and a second mount are provided. Each mount includes anode pads and cathode pads. The anode pads are aligned with the p-contacts and the cathode pads are aligned with the n-contacts. The method further includes mounting the light emitting structure on one of the first and second mounts. An electrical connection on the first mount between the plurality of LEDs differs from an electrical connection on the second mount between the plurality of LEDs. The first mount is operated at a different voltage than the second mount.

    Abstract translation: 在根据本发明的实施例的方法中，提供了包括多个发光二极管（LED）的发光结构。 每个LED包括p接触和n接触。 提供第一安装件和第二安装件。 每个安装座包括阳极垫和阴极垫。 阳极焊盘与p触点对准，阴极焊盘与n触点对准。 该方法还包括将发光结构安装在第一和第二安装件中的一个上。 多个LED之间的第一安装件上的电连接与多个LED之间的第二安装件上的电连接不同。 第一安装座的工作电压与第二安装座不同。

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