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公开(公告)号：US09722137B2
公开(公告)日：2017-08-01
申请号：US14994106
申请日：2016-01-12
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Jipu Lei , Kwong-Hin Henry Choy , Yajun Wei , Stefano Schiaffino , Daniel Alexander Steigerwald
CPC classification number: H01L33/0079 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L25/167 , H01L33/0095 , H01L33/38 , H01L33/62 , H01L2224/0401 , H01L2224/05552 , H01L2224/05568 , H01L2224/06102 , H01L2224/13144 , H01L2924/00014 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface though which light is emitted. A copper layer has a first portion electrically connected to and opposing the bottom surface of the p-type layer. A dielectric wall extends through the copper layer to isolate a second portion of the copper layer from the first portion. A metal shunt electrically connects the second portion of the copper layer to the top surface of the n-type layer. P-metal electrodes electrically connect to the first portion, and n-metal electrodes electrically connect to the second portion, wherein the LED structure forms a flip chip. Other embodiments of the methods and structures are also described.
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公开(公告)号：US20170373235A1
公开(公告)日：2017-12-28
申请号：US15663715
申请日：2017-07-29
Applicant: Koninklijke Philips N.V.
Inventor： Jipu Lei , Yajun Wei , Alexander H. Nickel , Stefano Schiaffino , Daniel Alexander Steigerwald
CPC classification number: H01L33/62 , H01L24/13 , H01L24/14 , H01L33/005 , H01L33/0079 , H01L33/486 , H01L2224/13008 , H01L2224/13022 , H01L2224/13144 , H01L2224/1403 , H01L2224/14051 , H01L2224/16225 , H01L2224/16227 , H01L2224/17517 , H01L2924/01019 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/351 , H01L2933/0066 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer is formed in the gap followed by filling the gap with a metal. The metal is patterned to form stud bumps that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.
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公开(公告)号：US20160126408A1
公开(公告)日：2016-05-05
申请号：US14994106
申请日：2016-01-12
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Jipu Lei , Kwong-Hin Henry Choy , Yajun Wei , Stefano Schiaffino , Daniel Alexander Steigerwald
CPC classification number: H01L33/0079 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L25/167 , H01L33/0095 , H01L33/38 , H01L33/62 , H01L2224/0401 , H01L2224/05552 , H01L2224/05568 , H01L2224/06102 , H01L2224/13144 , H01L2924/00014 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface though which light is emitted. A copper layer has a first portion electrically connected to and opposing the bottom surface of the p-type layer. A dielectric wall extends through the copper layer to isolate a second portion of the copper layer from the first portion. A metal shunt electrically connects the second portion of the copper layer to the top surface of the n-type layer. P-metal electrodes electrically connect to the first portion, and n-metal electrodes electrically connect to the second portion, wherein the LED structure forms a flip chip. Other embodiments of the methods and structures are also described.
Abstract translation: 发光二极管（LED）结构具有半导体层，包括p型层，有源层和n型层。 p型层具有底面，n型层具有通过哪个光发射的顶面。 铜层具有电连接到p型层的底表面并与之相对的第一部分。 电介质壁延伸穿过铜层以将铜层的第二部分与第一部分隔离。 金属分流器将铜层的第二部分电连接到n型层的顶表面。 P金属电极电连接到第一部分，并且n金属电极电连接到第二部分，其中LED结构形成倒装芯片。 还描述了方法和结构的其他实施例。
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Patent Agency Ranking
公开(公告)号：US09722161B2
公开(公告)日：2017-08-01
申请号：US14977565
申请日：2015-12-21
Applicant: Koninklijke Philips N.V.
Inventor： Jipu Lei , Yajun Wei , Alexander H. Nickel , Stefano Schiaffino , Daniel Alexander Steigerwald
CPC classification number: H01L33/62 , H01L24/13 , H01L24/14 , H01L33/005 , H01L33/0079 , H01L33/486 , H01L2224/13008 , H01L2224/13022 , H01L2224/13144 , H01L2224/1403 , H01L2224/14051 , H01L2224/16225 , H01L2224/16227 , H01L2224/17517 , H01L2924/01019 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/351 , H01L2933/0066 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer is formed in the gap followed by filling the gap with a metal. The metal is patterned to form stud bumps that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.
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公开(公告)号：US09431581B2
公开(公告)日：2016-08-30
申请号：US14869625
申请日：2015-09-29
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Daniel Alexander Steigerwald , Jerome Chandra Bhat , Salman Akram
IPC: H01L21/00 , H01L33/48 , H01L33/62 , H01L33/50 , H01L25/075 , H01L25/00 , H01L33/46 , H01L33/58 , H01L33/00
CPC classification number: H01L33/483 , H01L25/075 , H01L25/50 , H01L33/0079 , H01L33/46 , H01L33/50 , H01L33/58 , H01L33/62 , H01L2224/16 , H01L2933/0066
Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.
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公开(公告)号：US20180019370A1
公开(公告)日：2018-01-18
申请号：US15664651
申请日：2017-07-31
Applicant: Koninklijke Philips N.V.
Inventor： Jipu Lei , Kwong-Hin Henry Choy , Yajun Wei , Stefano Schiaffino , Daniel Alexander Steigerwald
CPC classification number: H01L33/0079 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L25/167 , H01L33/0095 , H01L33/38 , H01L33/62 , H01L2224/0401 , H01L2224/05552 , H01L2224/05568 , H01L2224/06102 , H01L2224/13144 , H01L2924/00014 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface though which light is emitted. A copper layer has a first portion electrically connected to and opposing the bottom surface of the p-type layer. A dielectric wall extends through the copper layer to isolate a second portion of the copper layer from the first portion. A metal shunt electrically connects the second portion of the copper layer to the top surface of the n-type layer. P-metal electrodes electrically connect to the first portion, and n-metal electrodes electrically connect to the second portion, wherein the LED structure forms a flip chip. Other embodiments of the methods and structures are also described.
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公开(公告)号：US20160126436A1
公开(公告)日：2016-05-05
申请号：US14977565
申请日：2015-12-21
Applicant: Koninklijke Philips N.V.
Inventor： Jipu Lei , Yajun Wei , Alexander H. Nickel , Stefano Schiaffino , Daniel Alexander Steigerwald
IPC: H01L33/62
CPC classification number: H01L33/62 , H01L24/13 , H01L24/14 , H01L33/005 , H01L33/0079 , H01L33/486 , H01L2224/13008 , H01L2224/13022 , H01L2224/13144 , H01L2224/1403 , H01L2224/14051 , H01L2224/16225 , H01L2224/16227 , H01L2224/17517 , H01L2924/01019 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/351 , H01L2933/0066 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer is formed in the gap followed by filling the gap with a metal. The metal is patterned to form stud bumps that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.
Abstract translation: 发光二极管（LED）结构具有半导体层，包括p型层，有源层和n型层。 p型层具有底面，n型层具有发射光的顶面。 蚀刻p型层和有源层的部分以露出n型层。 LED的表面用光致抗蚀剂图案化，并且铜暴露在暴露的表面上以形成与其各自的半导体层电接触的p和n电极。 n和p电极之间有间隙。 为了提供间隙之间的半导体层的机械支撑，在间隙中形成电介质层，随后用金属填充间隙。 金属被图案化以形成基本上覆盖LED管芯的底表面但不会使电极短路的柱状凸块。 基本均匀的覆盖在后续工艺步骤中支持半导体层。
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公开(公告)号：US09705047B2
公开(公告)日：2017-07-11
申请号：US15066237
申请日：2016-03-10
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Daniel Alexander Steigerwald , Jerome Chandra Bhat , Salman Akram
CPC classification number: H01L33/483 , H01L25/075 , H01L25/50 , H01L33/0079 , H01L33/46 , H01L33/50 , H01L33/58 , H01L33/62 , H01L2224/16 , H01L2933/0066
Abstract: A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.
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