公开(公告)号：US20200335406A1

公开(公告)日：2020-10-22

申请号：US16847388

申请日：2020-04-13

Applicant: KLA Corporation

Inventor： Christopher Liman ,  Antonio Arion Gellineau ,  Andrei V. Shchegrov ,  Sungchul Yoo

IPC: H01L21/66 ,  G01B15/02 ,  H01L21/67

Abstract: Methods and systems for measuring a complex semiconductor structure based on measurement data before and after a critical process step are presented. In some embodiments, the measurement is based on x-ray scatterometry measurement data. In one aspect, a measurement is based on fitting combined measurement data to a simplified geometric model of the measured structure. In some embodiments, the combined measurement data is determined by subtraction of a measured diffraction pattern before the critical process step from a measured diffraction pattern after the critical process step. In some embodiments, the simplified geometric model includes only the features affected by the critical process step. In another aspect, a measurement is based on a combined data set and a trained signal response metrology (SRM) model. In another aspect, a measurement is based on actual measurement data after the critical process step and simulated measurement data before the critical process step.

公开(公告)号：US20250146961A1

公开(公告)日：2025-05-08

申请号：US18430350

申请日：2024-02-01

Applicant: KLA Corporation

Inventor： Daniel James Haxton ,  Christopher Liman ,  InKyo Kim ,  Boxue Chen ,  Hyowon Park ,  Thaddeus Gerard Dziura ,  Nakyoon Kim ,  Houssam Chouaib ,  Anderson Chou ,  Dimitry Sanko

IPC: G01N23/20 ,  G01N21/95

Abstract: Methods and systems for determining random variation in one or more structures on a specimen are provided. One method includes determining characteristic(s) of output generated by an output acquisition subsystem for structure(s) formed on a specimen and simulating the characteristic(s) of the output with initial parameter values for the structure(s). The method also includes determining parameter values of the structure(s) formed on the specimen as the initial parameter values that resulted in the simulated characteristic(s) that best match the determined characteristic(s). The determined parameter values are responsive to random variation in parameter(s) of the structure(s) on the specimen.

公开(公告)号：US11990380B2

公开(公告)日：2024-05-21

申请号：US16847388

申请日：2020-04-13

Applicant: KLA Corporation

Inventor： Christopher Liman ,  Antonio Arion Gellineau ,  Andrei V. Shchegrov ,  Sungchul Yoo

IPC: G01B15/02 ,  G01B15/04 ,  G01N23/20 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01L22/26 ,  G01B15/02 ,  G01B15/04 ,  G01N23/20 ,  H01L21/67253 ,  G01B2210/56

Abstract: Methods and systems for measuring a complex semiconductor structure based on measurement data before and after a critical process step are presented. In some embodiments, the measurement is based on x-ray scatterometry measurement data. In one aspect, a measurement is based on fitting combined measurement data to a simplified geometric model of the measured structure. In some embodiments, the combined measurement data is determined by subtraction of a measured diffraction pattern before the critical process step from a measured diffraction pattern after the critical process step. In some embodiments, the simplified geometric model includes only the features affected by the critical process step. In another aspect, a measurement is based on a combined data set and a trained signal response metrology (SRM) model. In another aspect, a measurement is based on actual measurement data after the critical process step and simulated measurement data before the critical process step.

公开(公告)号：US20240085321A1

公开(公告)日：2024-03-14

申请号：US18136739

申请日：2023-04-19

Applicant: KLA Corporation

Inventor： John Hench ,  Akshay Krishna ,  Christopher Liman ,  Jeremy Smith ,  Liang Yin ,  Hyowon Park ,  Tianhan Wang ,  Boxue Chen

IPC: G01N21/47

CPC classification number: G01N21/4738

Abstract: Methods and systems for performing model-less measurements of semiconductor structures based on scatterometry measurement data are described herein. Scatterometry measurement data is processed directly, without the use of a traditional measurement model. Measurement sensitivity is defined by the changes in detected diffraction images at one or more non-zero diffraction orders over at least two different illumination incidence angles. Discrete values of a scalar function are determined directly from measured images at each incidence angle. A continuous mathematical function is fit to the set of discrete values of the scalar function determined at each incidence angle. A value of a parameter of interest is determined based on analysis of the mathematical function. In some embodiments, the scalar function includes a weighting function, and the weighting values associated with weighting function are optimized to yield an accurate fit of the mathematical function to the scalar values.

公开(公告)号：US12019030B2

公开(公告)日：2024-06-25

申请号：US17578310

申请日：2022-01-18

Applicant: KLA Corporation

Inventor： Antonio Arion Gellineau ,  Andrei V. Shchegrov ,  Hyowon Park ,  Pavan Gurudath ,  Christopher Liman ,  Jung Heon Song

IPC: G01N21/95 ,  G01N21/88

CPC classification number: G01N21/9501 ,  G01N2021/8845 ,  G01N2021/8848 ,  G01N2021/8883

Abstract: Methods and systems for monitoring the quality of a semiconductor measurement in a targeted manner are presented herein. Rather than relying on one or more general indices to determine overall measurement quality, one or more targeted measurement quality indicators are determined. Each targeted measurement quality indicator provides insight into whether a specific operational issue is adversely affecting measurement quality. In this manner, the one or more targeted measurement quality indicators not only highlight deficient measurements, but also provide insight into specific operational issues contributing to measurement deficiency. In some embodiments, values of one or more targeted measurement quality indicators are determined based on features extracted from measurement data. In some embodiments, values of one or more targeted measurement quality indicators are determined based on features extracted from one or more indications of a comparison between measurement data and corresponding measurement data simulated by a trained measurement model.

公开(公告)号：US20230228692A1

公开(公告)日：2023-07-20

申请号：US17578310

申请日：2022-01-18

Applicant: KLA Corporation

Inventor： Antonio Arion Gellineau ,  Andrei V. Shchegrov ,  Hyowon Park ,  Pavan Gurudath ,  Christopher Liman ,  Jung Heon Song

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N2021/8845

Abstract: Methods and systems for monitoring the quality of a semiconductor measurement in a targeted manner are presented herein. Rather than relying on one or more general indices to determine overall measurement quality, one or more targeted measurement quality indicators are determined. Each targeted measurement quality indicator provides insight into whether a specific operational issue is adversely affecting measurement quality. In this manner, the one or more targeted measurement quality indicators not only highlight deficient measurements, but also provide insight into specific operational issues contributing to measurement deficiency. In some embodiments, values of one or more targeted measurement quality indicators are determined based on features extracted from measurement data. In some embodiments, values of one or more targeted measurement quality indicators are determined based on features extracted from one or more indications of a comparison between measurement data and corresponding measurement data simulated by a trained measurement model.