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公开(公告)号：US12040303B2
公开(公告)日：2024-07-16
申请号：US17005362
申请日：2020-08-28
发明人： Mitsuaki Kato , Takahiro Omori , Akihiro Goryu , Tomoya Fumikura , Kenji Hirohata , Tetsuya Kugimiya
CPC分类号： H01L24/48 , G01R27/08 , G01R31/66 , H01L24/49 , H01L2224/45111 , H01L2224/45123 , H01L2224/45124 , H01L2224/45155 , H01L2224/45157 , H01L2224/45166 , H01L2224/45179 , H01L2224/4518 , H01L2224/45181 , H01L2224/45184 , H01L2224/4813 , H01L2224/48458 , H01L2224/4852 , H01L2224/48723 , H01L2224/48747 , H01L2224/48755 , H01L2224/48757 , H01L2224/48766 , H01L2224/48779 , H01L2224/4878 , H01L2224/48781 , H01L2224/48784 , H01L2224/48823 , H01L2224/48824 , H01L2224/48855 , H01L2224/48857 , H01L2224/48866 , H01L2224/48879 , H01L2224/4888 , H01L2224/48881 , H01L2224/48884 , H01L2224/49111 , H01L2224/49175 , H01L2924/01014 , H01L2924/0106 , H01L2924/01087
摘要： A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.
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公开(公告)号：US11079427B2
公开(公告)日：2021-08-03
申请号：US16117279
申请日：2018-08-30
发明人： Mitsuaki Kato , Akihiro Goryu , Kenji Hirohata
IPC分类号： G01R31/26 , G01K7/01 , G01B7/16 , G01L1/20 , H01L29/16 , H01L25/18 , G06F30/20 , G06F30/23 , G06F30/367
摘要： An inspection device comprises: a detecting unit that is connected to a plurality of semiconductor chips having mutually different rates of change of electrical resistance with respect to stress loading direction, and that detects an electrical resistance value of each semiconductor chip from electric current flowing in each semiconductor chip; a first memory unit that is used to hold model data meant for converting an electrical resistance value into a characteristic value indicating at least either temperature, or stress, or strain; a converting unit that converts the electrical resistance value of each semiconductor chip as detected by the detecting unit into the characteristic value using the model data held in the first memory unit; and a second memory unit that is used to store the characteristic value, which is obtained by conversion by the converting unit, as time-series data for each of the plurality of semiconductor chips.
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公开(公告)号：US10861941B2
公开(公告)日：2020-12-08
申请号：US16286648
申请日：2019-02-27
发明人： Akira Kano , Akihiro Goryu , Kenji Hirohata
摘要： According to an embodiment, in a semiconductor device, a total value of a change amount of chemical potential of the semiconductor device with respect to a expansion direction of a stacking fault and the stacking fault energy of the stacking fault is zero or more.
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公开(公告)号：US09940714B2
公开(公告)日：2018-04-10
申请号：US15584218
申请日：2017-05-02
发明人： Junichiro Ooga , Kenji Hirohata , Shinya Higashi
IPC分类号： G06K9/00 , G06T7/00 , G06K9/46 , G01N3/08 , A61B5/00 , G06T19/00 , G06T7/11 , G06T7/136 , G06T17/20
CPC分类号： G06T7/0012 , A61B5/0033 , A61B5/4528 , G01N3/08 , G06K9/00134 , G06K9/0014 , G06K9/00147 , G06K9/46 , G06K9/52 , G06K2209/05 , G06T7/11 , G06T7/136 , G06T17/20 , G06T19/00 , G06T2207/30008 , G06T2210/41
摘要： According to an embodiment, an image analyzing device includes a first acquirer, a constructor, a first calculator, a second calculator, and a third calculator. The first acquirer is configured to acquire image information on a joint of a subject and bones connected to the joint. The constructor is configured to construct a three-dimensional shape of the bones and the joint, and relation characteristics between a load and deformation in the bones and the joint from the image information. The first calculator is configured to calculate a positional relation between the bones connected to the joint. The second calculator is configured to calculate acting force of a muscle acting on the bones connected to the joint based on the positional relation. The third calculator is configured to calculate first stress acting on the joint based on the three-dimensional shape, the relation characteristics, and the acting force.
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公开(公告)号：US09675293B2
公开(公告)日：2017-06-13
申请号：US14943134
申请日：2015-11-17
发明人： Junichiro Ooga , Kenji Hirohata , Shinya Higashi
CPC分类号： G06T7/0012 , A61B5/0033 , A61B5/4528 , G01N3/08 , G06K9/00134 , G06K9/0014 , G06K9/00147 , G06K9/46 , G06K9/52 , G06K2209/05 , G06T7/11 , G06T7/136 , G06T17/20 , G06T19/00 , G06T2207/30008 , G06T2210/41
摘要： According to an embodiment, an image analyzing device includes a first acquirer, a constructor, a first calculator, a second calculator, and a third calculator. The first acquirer is configured to acquire image information on a joint of a subject and bones connected to the joint. The constructor is configured to construct a three-dimensional shape of the bones and the joint, and relation characteristics between a load and deformation in the bones and the joint from the image information. The first calculator is configured to calculate a positional relation between the bones connected to the joint. The second calculator is configured to calculate acting force of a muscle acting on the bones connected to the joint based on the positional relation. The third calculator is configured to calculate first stress acting on the joint based on the three-dimensional shape, the relation characteristics, and the acting force.
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公开(公告)号：US11656587B2
公开(公告)日：2023-05-23
申请号：US17412727
申请日：2021-08-26
发明人： Kenji Hirohata , Junichiro Ooga
IPC分类号： G05B17/02
CPC分类号： G05B17/02
摘要： A control apparatus according to an embodiment includes one or more hardware processors. The processors acquire, for each of elements, pieces of input data representing first physical field of a corresponding one of the elements at a first time point. The elements are obtained by discretization of an object to be controlled. The processors calculate, for each element, second physical field of a corresponding element at a second time point after the first time point. The second physical field is calculated based on a value of an energy functional representing energy of the corresponding element. The value of the energy functional is obtained by inputting the pieces of input data into an estimation model. The processors control the object such that control quantity based on the second physical field becomes a target value.
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公开(公告)号：US11018227B2
公开(公告)日：2021-05-25
申请号：US16117161
申请日：2018-08-30
发明人： Akihiro Goryu , Akira Kano , Kenji Hirohata
摘要： A semiconductor storage device comprises a plurality of memory cells arranged in a matrix. Each of the memory cells includes: a semiconductor storage element including a silicon carbide substrate and a silicon carbide film on a first surface of the silicon carbide substrate; a lower electrode on a second surface facing away from the first surface of the silicon carbide substrate; and an upper electrode on at least part of a surface of the silicon carbide film, the surface facing away from another surface of the silicon carbide film in contact with the silicon carbide substrate. Each memory cell includes at least one basal plane dislocation formed at at least part of the semiconductor storage element.
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公开(公告)号：US20200075733A1
公开(公告)日：2020-03-05
申请号：US16286648
申请日：2019-02-27
发明人： Akira Kano , Akihiro Goryu , Kenji Hirohata
摘要： According to an embodiment, in a semiconductor device, a total value of a change amount of chemical potential of the semiconductor device with respect to a expansion direction of a stacking fault and the stacking fault energy of the stacking fault is zero or more.
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公开(公告)号：US20190288072A1
公开(公告)日：2019-09-19
申请号：US16117161
申请日：2018-08-30
发明人： Akihiro Goryu , Akira Kano , Kenji Hirohata
摘要： A semiconductor storage device comprises a plurality of memory cells arranged in a matrix. Each of the memory cells includes: a semiconductor storage element including a silicon carbide substrate and a silicon carbide film on a first surface of the silicon carbide substrate; a lower electrode on a second surface facing away from the first surface of the silicon carbide substrate; and an upper electrode on at least part of a surface of the silicon carbide film, the surface facing away from another surface of the silicon carbide film in contact with the silicon carbide substrate. Each memory cell includes at least one basal plane dislocation formed at at least part of the semiconductor storage element.
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10.发明申请公开(公告)号：US20190219628A1
公开(公告)日：2019-07-18
申请号：US16117279
申请日：2018-08-30
发明人： Mitsuaki KATO , Akihiro Goryu , Kenji Hirohata
CPC分类号： G01R31/2607 , G01B7/18 , G01K7/01 , G01K2217/00 , G01L1/20 , G06F17/5018 , H01L25/065 , H01L25/07 , H01L25/18 , H01L29/1608
摘要： An inspection device comprises: a detecting unit that is connected to a plurality of semiconductor chips having mutually different rates of change of electrical resistance with respect to stress loading direction, and that detects an electrical resistance value of each semiconductor chip from electric current flowing in each semiconductor chip; a first memory unit that is used to hold model data meant for converting an electrical resistance value into a characteristic value indicating at least either temperature, or stress, or strain; a converting unit that converts the electrical resistance value of each semiconductor chip as detected by the detecting unit into the characteristic value using the model data held in the first memory unit; and a second memory unit that is used to store the characteristic value, which is obtained by conversion by the converting unit, as time-series data for each of the plurality of semiconductor chips.
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