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公开(公告)号：US09865770B2
公开(公告)日：2018-01-09
申请号：US14994779
申请日：2016-01-13
发明人： Shinji Saito , Rei Hashimoto , Jongil Hwang , Shinya Nunoue
CPC分类号： H01L33/06 , H01L33/0025 , H01L33/0075 , H01L33/32
摘要： According to one embodiment, a light emitting element includes n-type and p-type semiconductor layers and a light emitting unit. The light emitting unit is provided between the n-type semiconductor layer and the p-type semiconductor layer, the light emitting unit emits light with a peak wavelength of not less than 530 nm. The light emitting unit includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer provided between the n-side barrier layer and the p-type semiconductor layer, a first well layer contacting the n-side barrier layer between the n-side barrier layer and the first barrier layer, a first AlGaN layer provided between the first well layer and the first barrier layer and including Alx1Ga1-x1N (0.15≦x1≦1), and a first p-side InGaN layer provided between the first AlGaN layer and the first barrier layer and including Inya1Ga1-ya1N (0
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公开(公告)号：US09337400B2
公开(公告)日：2016-05-10
申请号：US14734532
申请日：2015-06-09
发明人： Rei Hashimoto , Shigeya Kimura , Jongil Hwang , Hiroshi Katsuno , Shinji Saito , Shinya Nunoue
IPC分类号： H01L33/42 , H01L33/00 , H01L33/50 , H01L33/38 , H01L33/64 , H01L33/60 , H01L25/075 , H01L33/40
CPC分类号： H01L33/504 , H01L25/0756 , H01L33/0079 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/60 , H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers.
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3.发明授权公开(公告)号：US09072146B2
公开(公告)日：2015-06-30
申请号：US13854381
申请日：2013-04-01
发明人： Rei Hashimoto , Jongil Hwang , Shinji Saito , Shinya Nunoue
CPC分类号： H05B33/0845 , Y02E10/52
摘要： A light-emitting electric-power generation module according to an embodiment includes a photoelectric conversion element for emitting light and generating electric power, a light-emission controller configured to control light emission of the photoelectric conversion element, an electric-power generation controller configured to control electric-power generation of the photoelectric conversion element, and a switching unit configured to switch light-emission state and electric-power generation state of the photoelectric conversion element.
摘要翻译： 根据实施例的发光发电模块包括用于发光并产生电力的光电转换元件，被配置为控制光电转换元件的发光的发光控制器，配置为 控制光电转换元件的发电，以及用于切换光电转换元件的发光状态和发电状态的开关单元。
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公开(公告)号：US11111598B2
公开(公告)日：2021-09-07
申请号：US16456265
申请日：2019-06-28
发明人： Hiro Gangi , Jongil Hwang , Thomas Kempa , Eric Thompson
IPC分类号： C30B23/02 , H01L21/02 , H01L21/311 , H01L21/768 , H01L23/48 , H01L29/10 , H01L29/78 , H01L23/00
摘要： According to one embodiment, a crystal growth method includes forming a first member at at least a part of a bottom portion of a hole in a structure body. The hole includes the bottom portion and a side portion. The first member includes a first element. The first element is not adhered to at least a part of the side portion in the forming the first member. The crystal growth method includes growing a crystal member inside the hole by supplying a source material to the hole after the forming the first member. The source material includes a second element. The crystal member includes the second element.
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5.发明申请公开(公告)号：US20140111095A1
公开(公告)日：2014-04-24
申请号：US13854381
申请日：2013-04-01
发明人： Rei HASHIMOTO , Jongil Hwang , Shinji Saito , Shinya Nunoue
IPC分类号： H05B33/08
CPC分类号： H05B33/0845 , Y02E10/52
摘要： A light-emitting electric-power generation module according to an embodiment includes a photoelectric conversion element for emitting light and generating electric power, a light-emission controller configured to control light emission of the photoelectric conversion element, an electric-power generation controller configured to control electric-power generation of the photoelectric conversion element, and a switching unit configured to switch light-emission state and electric-power generation state of the photoelectric conversion element.
摘要翻译： 根据实施例的发光发电模块包括用于发光并产生电力的光电转换元件，被配置为控制光电转换元件的发光的发光控制器，配置为 控制光电转换元件的发电，以及用于切换光电转换元件的发光状态和发电状态的开关单元。
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公开(公告)号：US20140029636A1
公开(公告)日：2014-01-30
申请号：US13780416
申请日：2013-02-28
发明人： Hung HUNG , Yoshiyuki Harada , Jongil Hwang , Mitsuhiro Kushibe , Naoharu Sugiyama , Shinya Nunoue
CPC分类号： H01S5/3013 , B82Y20/00 , H01L33/32 , H01S5/2009 , H01S5/321 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting layer, a first intermediate layer, and a second intermediate layer. The n-type and p-type semiconductor layers include a nitride semiconductor. The light emitting layer is provided between the n-type and p-type semiconductor layers, and includes barrier layers and a well layer. A bandgap energy of the well layer is less than that of the barrier layers. The first intermediate layer is provided between the light emitting layer and the p-type semiconductor layer. A bandgap energy of the first intermediate layer is greater than that of the barrier layers. The second intermediate layer includes first and second portions. The first portion is in contact with a p-side barrier layer most proximal to the p-type semiconductor layer. The second portion is in contact with the first intermediate layer.
摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，发光层，第一中间层和第二中间层。 n型和p型半导体层包括氮化物半导体。 发光层设置在n型和p型半导体层之间，并且包括势垒层和阱层。 阱层的带隙能量小于阻挡层的带隙能量。 第一中间层设置在发光层和p型半导体层之间。 第一中间层的带隙能量大于阻挡层的带隙能量。 第二中间层包括第一和第二部分。 第一部分与最靠近p型半导体层的p侧阻挡层接触。 第二部分与第一中间层接触。
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7.发明申请公开(公告)号：US20150325555A1
公开(公告)日：2015-11-12
申请号：US14734532
申请日：2015-06-09
发明人： Rei Hashimoto , Shigeya Kimura , Jongil Hwang , Hiroshi Katsuno , Shinji Saito , Shinya Nunoue
CPC分类号： H01L33/504 , H01L25/0756 , H01L33/0079 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/60 , H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers.
摘要翻译： 根据一个实施例，半导体发光元件包括光反射层，第一第二，第三和第四半导体层，第一和第二发光层以及第一透光层。 第二半导体层设置在第一半导体层和光反射层之间。 第一发光层设置在第一和第二半导体层之间。 第一透光层设置在第二半导体层和光反射层之间。 第三半导体层设置在第一透光层和光反射层之间。 第四半导体层设置在第三半导体层和光反射层之间。 第二发光层设置在第三和第四半导体层之间。 光反射层与从第三和第四半导体层中选择的一个电连接。
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8.发明授权Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer 失效氮化物半导体器件，氮化物半导体晶片和氮化物半导体层的制造方法公开(公告)号：US08759851B2
公开(公告)日：2014-06-24
申请号：US13952929
申请日：2013-07-29
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/201 , H01L33/00
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02658 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.
摘要翻译： 根据一个实施例，氮化物半导体器件包括基底层和功能层。 基底层形成在形成在硅衬底上的含Al氮化物半导体层上。 基础层的厚度不小于1微米，包括GaN。 功能层设置在基础层上。 功能层包括第一半导体层。 第一半导体层的杂质浓度高于基础层中的杂质浓度，并且包括第一导电类型的GaN。
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9.发明授权公开(公告)号：US11333700B2
公开(公告)日：2022-05-17
申请号：US16799980
申请日：2020-02-25
发明人： Jumpei Tajima , Jongil Hwang , Shinya Nunoue
IPC分类号： G01R31/26
摘要： According to one embodiment, an inspection apparatus of a semiconductor device includes a first probe configured to contact a first portion of the semiconductor device, a conductive member configured to oppose a second portion of the semiconductor device, and a detector configured to apply a first voltage between the semiconductor device and the first probe, to apply a conductive member voltage between the semiconductor device and the conductive member, and to detect a current flowing in the first probe. The first voltage has a first polarity of one of positive or negative when referenced to a potential of the semiconductor device. The conductive member voltage has a second polarity of the other of positive or negative when referenced to the potential of the semiconductor device.
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10.发明授权公开(公告)号：US09202994B2
公开(公告)日：2015-12-01
申请号：US14176272
申请日：2014-02-10
发明人： Rei Hashimoto , Shigeya Kimura , Jongil Hwang , Hiroshi Katsuno , Shinji Saito , Shinya Nunoue
CPC分类号： H01L33/504 , H01L25/0756 , H01L33/0079 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/60 , H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers.
摘要翻译： 根据一个实施例，半导体发光元件包括光反射层，第一第二，第三和第四半导体层，第一和第二发光层以及第一透光层。 第二半导体层设置在第一半导体层和光反射层之间。 第一发光层设置在第一和第二半导体层之间。 第一透光层设置在第二半导体层和光反射层之间。 第三半导体层设置在第一透光层和光反射层之间。 第四半导体层设置在第三半导体层和光反射层之间。 第二发光层设置在第三和第四半导体层之间。 光反射层与从第三和第四半导体层中选择的一个电连接。
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