发明申请
- 专利标题: SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 半导体发光元件及其制造方法
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申请号: US14734532申请日: 2015-06-09
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公开(公告)号: US20150325555A1公开(公告)日: 2015-11-12
- 发明人: Rei Hashimoto , Shigeya Kimura , Jongil Hwang , Hiroshi Katsuno , Shinji Saito , Shinya Nunoue
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: JP Minato-ku
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2013-046009 20130307
- 主分类号: H01L25/075
- IPC分类号: H01L25/075 ; H01L33/42 ; H01L33/64 ; H01L33/40 ; H01L33/60 ; H01L33/38
摘要:
According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers.
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