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18 条记录 (耗时 0.022 秒)

    Semiconductor device and method for fabricating the same
    1.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08765489B2

    公开(公告)日：2014-07-01

    申请号：US13529051

    申请日：2012-06-21

    申请人： Jung Woo Park ,  Gil Jae Park ,  Ki Seon Park

    发明人： Jung Woo Park ,  Gil Jae Park ,  Ki Seon Park

    IPC分类号： H01L21/00 ,  H01L29/82 ,  G11C11/00

    CPC分类号： H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

    摘要： A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element.

    摘要翻译： 一种制造半导体器件的方法包括在衬底上形成磁隧道结（MTJ）元件，沿着MTJ元件的形状形成第一覆盖层，在第一覆盖层上形成绝缘层，形成暴露部分 通过选择性地蚀刻绝缘层，在沟槽的侧壁上形成第二覆盖层，使用第二覆盖层作为蚀刻掩模去除第一覆盖层的暴露部分，以暴露上表面 的MTJ元件，并且在沟槽中形成导电层，其中导电层接触MTJ元件的上表面。

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20130037896A1

    公开(公告)日：2013-02-14

    申请号：US13529051

    申请日：2012-06-21

    申请人： Jung Woo Park ,  Gil Jae Park ,  Ki Seon Park

    发明人： Jung Woo Park ,  Gil Jae Park ,  Ki Seon Park

    IPC分类号： H01L29/82 ,  H01L43/12

    CPC分类号： H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

    摘要： A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element.

    摘要翻译： 一种制造半导体器件的方法包括在衬底上形成磁隧道结（MTJ）元件，沿着MTJ元件的形状形成第一覆盖层，在第一覆盖层上形成绝缘层，形成暴露部分 通过选择性地蚀刻绝缘层，在沟槽的侧壁上形成第二覆盖层，使用第二覆盖层作为蚀刻掩模去除第一覆盖层的暴露部分，以暴露上表面 的MTJ元件，并且在沟槽中形成导电层，其中导电层接触MTJ元件的上表面。

    Baby bidet
    3.
    外观设计
    Baby bidet 有权

    公开(公告)号：USD1009233S1

    公开(公告)日：2023-12-26

    申请号：US29819069

    申请日：2021-12-13

    申请人： Jung Woo Park

    设计人： Jung Woo Park

    摘要： FIG. 1 is a perspective view of the baby bidet showing my new design;
    FIG. 2 is a front view thereof;
    FIG. 3 is a left side view thereof;
    FIG. 4 is a right side view thereof;
    FIG. 5 is a top plan view thereof;
    FIG. 6 is a bottom plan view thereof; and,
    FIG. 7 is a rear view.
    The broken lines in the drawings depict environmental subject matter of the baby bidet only and form no part of the claimed design.

    Stage with displacement magnification mechanism for measuring
    5.
    发明授权
    Stage with displacement magnification mechanism for measuring 有权
    用于测量的位移放大机构的阶段

    公开(公告)号：US08089638B2

    公开(公告)日：2012-01-03

    申请号：US12373460

    申请日：2006-12-22

    申请人： Deug Woo Lee ,  Soo Chang Choi ,  Jung Woo Park

    发明人： Deug Woo Lee ,  Soo Chang Choi ,  Jung Woo Park

    IPC分类号： G01B11/14

    CPC分类号： G01B11/024 ,  G01B11/26

    摘要： The present invention relates to a stage with a displacement measuring means capable of measuring a displacement, and more particularly, to a stage provided with a displacement magnification means capable of magnifying a displacement so as to precisely measure a minute displacement on the order of nanometers. A stage according to an aspect of the present invention comprises a fixed base, a movable table, a first elastic support, a first actuator, a first displacement converting means and a first displacement measuring means. The movable table is installed to be movable with respect to the fixed base. The first elastic support supports the movable table with respect to the fixed base, and the first actuator generates a displacement of the movable table in one direction. The first displacement converting means is connected to the movable table and the fixed base so as to convert the unidirectional displacement of the movable table into a rotational displacement about a point thereof connected to the movable table. The first displacement measuring means measures the displacement converted by the first displacement converting means. The present invention provides a stage provided with a device capable of magnifying and measuring a displacement generated in a feeding table, thereby implementing a high measurement precision using a measurement device with a low precision.

    摘要翻译： 本发明涉及具有能够测量位移的位移测量装置的平台，更具体地说，涉及一种设置有能够放大位移的位移放大装置的台，以精确地测量大约数量级的微小位移。 根据本发明的一个方面的平台包括固定基座，可动台，第一弹性支撑件，第一致动器，第一位移转换装置和第一位移测量装置。 可移动台被安装成可相对于固定底座移动。 第一弹性支撑件相对于固定基座支撑可移动台，并且第一致动器在一个方向上产生可移动台的位移。 第一位移转换装置连接到可移动工作台和固定底座，以将可移动工作台的单向位移转换成围绕其连接到活动工作台的点的旋转位移。 第一位移测量装置测量由第一位移转换装置转换的位移。 本发明提供了一种设置有能够放大和测量在馈送台中产生的位移的装置的台，从而使用低精度的测量装置实现高测量精度。

    STRETCHABLE CIRCUIT CONFIGURATION
    6.
    发明申请
    STRETCHABLE CIRCUIT CONFIGURATION 有权
    可扩展电路配置

    公开(公告)号：US20100238636A1

    公开(公告)日：2010-09-23

    申请号：US12728814

    申请日：2010-03-22

    申请人： Stephen Mascaro ,  Debra Mascaro ,  Jumana Abu-Khalaf ,  Jung Woo Park

    发明人： Stephen Mascaro ,  Debra Mascaro ,  Jumana Abu-Khalaf ,  Jung Woo Park

    IPC分类号： H05K1/00 ,  B29C45/14

    CPC分类号： H05K1/0283 ,  A61B5/0261 ,  A61B5/0295 ,  A61B5/14552 ,  B29C45/14639 ,  H05K1/183 ,  H05K3/143 ,  H05K3/284 ,  H05K3/3463 ,  H05K2201/0133 ,  H05K2201/10106 ,  H05K2201/10121 ,  H05K2201/10151 ,  H05K2201/1034 ,  H05K2201/2072 ,  H05K2203/0271 ,  H05K2203/128 ,  H05K2203/1327

    摘要： A stretchable electronic circuit that includes a stretchable base substrate having a plurality of stretchable conductors formed onto a surface thereof, with both the stretchable base substrate and conductors being bendable together about two orthogonal axes. The stretchable circuit also includes a stretchable sensor layer attached to the base substrate with a cavity formed therein which has a contact point exposing one of the plurality of stretchable conductors. The stretchable electronic circuit further includes a surface mount device (SMD) package with a conductor contact protrusion installed into the cavity, and wherein a substantially constant electrical connection is established between the conductor contact protrusion and the stretchable conductor at the contact point by tensile forces interacting between the stretchable base substrate and the stretchable sensor layer.

    摘要翻译： 一种可拉伸电子电路，其包括具有形成在其表面上的多个可拉伸导体的可拉伸基底基板，所述可拉伸基底基板和导体可绕两个正交轴线弯曲在一起。 可拉伸电路还包括附接到基底基底的可拉伸传感器层，其中形成有腔，其具有暴露多个可拉伸导体之一的接触点。 可伸缩电子电路还包括一个表面安装器件（SMD）封装，其中导体接触突起安装在空腔中，并且其中通过张力相互作用在导体接触突起与接触点处的可拉伸导体之间建立了基本恒定的电连接 在可拉伸基底基板和可拉伸传感器层之间。

    Method for fabricating semiconductor device having vertical-type channel
    10.
    发明授权
    Method for fabricating semiconductor device having vertical-type channel 失效
    制造具有垂直型通道的半导体器件的方法

    公开(公告)号：US07749844B2

    公开(公告)日：2010-07-06

    申请号：US11479439

    申请日：2006-06-29

    申请人： Jung Woo Park

    发明人： Jung Woo Park

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7827 ,  H01L27/10873

    摘要： A semiconductor device includes an active region including a surface region and a first recess formed below the surface region, the active region extending along a first direction; a device isolation structure provided on an edge of the active region; a gate line traversing over the surface region of the active region along a second direction orthogonal to the first direction; a second recess formed in the device isolation structure to receive a given portion of the gate line into the second recess; a first junction region formed in the active region beneath the first recess and on a first side of the gate line; and a second junction region formed on a second side of the gate line and above the first junction region, wherein the first and second junction regions define a vertical-type channel that extends along lateral and vertical directions.

    摘要翻译： 半导体器件包括有源区，该有源区包括表面区域和形成在该表面区域下方的第一凹部，该有源区域沿第一方向延伸; 设置在所述有源区域的边缘上的器件隔离结构; 栅极线沿着与第一方向正交的第二方向横越有源区域的表面区域; 形成在所述器件隔离结构中以将栅极线的给定部分接收到第二凹部中的第二凹部; 形成在第一凹部下方的有源区域和栅极线的第一侧上的第一接合区域; 以及形成在所述栅极线的第二侧上并且在所述第一接合区域上方的第二接合区域，其中所述第一和第二接合区域限定沿着横向和垂直方向延伸的垂直型通道。