公开(公告)号：US20150050431A1

公开(公告)日：2015-02-19

申请号：US14351930

申请日：2012-03-30

Applicant: Jung Woo Park ,  Jun Young Kim ,  Kwang deok Lee ,  Whee Won Jin

Inventor： Jung Woo Park ,  Jun Young Kim ,  Kwang deok Lee ,  Whee Won Jin

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/448 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C07F17/02 ,  C23C16/18

Abstract: The present invention relates to a ruthenium compound including a specific ligand structure of 1-ethyl-1,4-cyclohexadiene, 1,3-butadiene or isoprene and having superior thermal stability, vaporizing property and step coverage, and a thin film deposited using same.

Abstract translation: 本发明涉及包含1-乙基-1,4-环己二烯，1,3-丁二烯或异戊二烯的特定配体结构的钌化合物，具有优异的热稳定性，汽化性能和阶梯覆盖率，以及使用其沉积的薄膜 。

公开(公告)号：US09347133B2

公开(公告)日：2016-05-24

申请号：US14351930

申请日：2012-03-30

Applicant: Jung Woo Park ,  Jun Young Kim ,  Kwang deok Lee ,  Whee Won Jin

Inventor： Jung Woo Park ,  Jun Young Kim ,  Kwang deok Lee ,  Whee Won Jin

IPC: C23C16/06 ,  C23C16/16 ,  C23C16/18 ,  C23C16/455 ,  C07F17/02

CPC classification number: C23C16/45553 ,  C07F17/02 ,  C23C16/18

Abstract: A method of depositing a ruthenium metal thin film or ruthenium oxide thin film comprising a ruthenium compound used for depositing metallic Ru or RuO2 thin film on a substrate via atomic layer deposition, and the ruthenium compound represented by Chemical Formula 1, wherein L is a ligand selected from the group consisting of 1-ethyl-1,4-cyclohexadiene, 1,3-butadiene, and isoprene.

Abstract translation: 一种沉积金属钌金属薄膜或氧化钌薄膜的方法，包括用于通过原子层沉积在基底上沉积金属Ru或RuO 2薄膜的钌化合物和由化学式1表示的钌化合物，其中L是配体 选自1-乙基-1,4-环己二烯，1,3-丁二烯和异戊二烯。