公开(公告)号：US20050101047A1

公开(公告)日：2005-05-12

申请号：US11010862

申请日：2004-12-13

申请人： John Freeman ,  William Baney ,  Timothy Betzner ,  Dan Chilcott ,  John Christenson ,  Timothy Vas ,  George Queen ,  Stephen Long

发明人： John Freeman ,  William Baney ,  Timothy Betzner ,  Dan Chilcott ,  John Christenson ,  Timothy Vas ,  George Queen ,  Stephen Long

IPC分类号： B81C1/00 ,  H01L21/00 ,  H04R19/00 ,  H04R25/00 ,  H04R31/00

CPC分类号： H04R31/00 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00666 ,  H04R19/005 ,  H04R31/006 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49005

摘要： A process of forming a capacitive audio transducer, preferably having an all-silicon monolithic construction that includes capacitive plates defined by doped single-crystal silicon layers. The capacitive plates are defined by etching the single-crystal silicon layers, and the capacitive gap therebetween is accurately established by wafer bonding, yielding a transducer that can be produced by high-volume manufacturing practices.

摘要翻译： 形成电容式音频换能器的过程，优选地具有包括由掺杂的单晶硅层限定的电容板的全硅单片结构。 通过蚀刻单晶硅层来限定电容板，并且通过晶片接合精确地建立它们之间的电容间隙，产生可以通过大批量制造实践产生的换能器。

公开(公告)号：US20060211161A1

公开(公告)日：2006-09-21

申请号：US11081422

申请日：2005-03-16

申请人： John Christenson ,  Seyed Zarabadi ,  Dan Chilcott

发明人： John Christenson ,  Seyed Zarabadi ,  Dan Chilcott

IPC分类号： H01L21/00

CPC分类号： B81C1/00047 ,  B81B2201/0235 ,  B81B2203/033 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/082

摘要： A linear accelerometer is provided having a support substrate, fixed electrodes having fixed capacitive plates, and a movable inertial mass having movable capacitive plates capacitively coupled to the fixed capacitive plates. Adjacent capacitive plates vary in height. The accelerometer further includes support tethers for supporting the inertial mass and allowing movement of the inertial mass upon experiencing a linear acceleration along a sensing axis. The accelerometer has inputs and an output for providing an output signal which varies as a function of the capacitive coupling and is indicative of both magnitude and direction of vertical acceleration along the sensing Z-axis. A microsensor fabrication process is also provided which employs a top side mask and etch module.

摘要翻译： 提供了一种线性加速度计，其具有支撑基板，具有固定电容板的固定电极和具有电容耦合到固定电容板的可移动电容板的可动惯性块。 相邻的电容板的高度不同。 加速度计进一步包括用于支撑惯性质量的支撑系绳，并允许惯性质量块沿着感测轴线经历线性加速度的运动。 加速度计具有输入和输出，用于提供作为电容耦合的函数而变化的输出信号，并且指示沿感测Z轴的垂直加速度的大小和方向。 还提供了采用顶侧掩模和蚀刻模块的微传感器制造工艺。

公开(公告)号：US20050064619A1

公开(公告)日：2005-03-24

申请号：US10955128

申请日：2004-09-30

申请人： Abhijeet Chavan ,  James Logsdon ,  Dan Chilcott ,  John Christenson ,  Robert Speck

发明人： Abhijeet Chavan ,  James Logsdon ,  Dan Chilcott ,  John Christenson ,  Robert Speck

IPC分类号： H01L27/16 ,  H01L21/00

CPC分类号： B81B3/0072 ,  B81B2201/0278 ,  B81B2203/0127 ,  G01J5/02 ,  G01J5/024 ,  G01J5/12 ,  H01L27/16 ,  H01L2224/48463

摘要： A process using integrated sensor technology in which a micromachined sensing element and signal processing circuit are combined on a single semiconductor substrate to form, for example, an infrared sensor. The process is based on modifying a CMOS process to produce an improved layered micromachined member, such as a diaphragm, after the circuit fabrication process is completed. The process generally entails forming a circuit device on a substrate by processing steps that include forming multiple dielectric layers and at least one conductive layer on the substrate. The dielectric layers comprise an oxide layer on a surface of the substrate and at least two dielectric layers that are in tension, with the conductive layer being located between the two dielectric layers. The surface of the substrate is then dry etched to form a cavity and delineate the diaphragm and a frame surrounding the diaphragm. The dry etching step terminates at the oxide layer, such that the diaphragm comprises the dielectric layers and conductive layer. A special absorber is preferably fabricated on the diaphragm to promote efficient absorption of incoming infrared radiation.

摘要翻译： 使用集成传感器技术的方法，其中微机械感测元件和信号处理电路组合在单个半导体衬底上以形成例如红外传感器。 该方法基于在电路制造过程完成之后修改CMOS工艺以产生改进的分层微加工构件，例如隔膜。 该方法通常需要通过处理步骤在衬底上形成电路器件，该步骤包括在衬底上形成多个电介质层和至少一个导电层。 电介质层包括在衬底的表面上的氧化物层和处于张力的至少两个电介质层，导电层位于两个电介质层之间。 然后将基板的表面干蚀刻以形成空腔并描绘膜片和围绕隔膜的框架。 干蚀刻步骤终止于氧化物层，使得隔膜包括电介质层和导电层。 优选地在隔膜上制造特殊的吸收体以促进进入的红外辐射的有效吸收。

公开(公告)号：US20070251592A1

公开(公告)日：2007-11-01

申请号：US11414851

申请日：2006-05-01

申请人： John Christenson ,  Dan Chilcott

发明人： John Christenson ,  Dan Chilcott

IPC分类号： F16K15/14

CPC分类号： F16K99/0001 ,  F15C5/00 ,  F16K99/0009 ,  F16K99/0034 ,  F16K99/0057 ,  F16K2099/0074 ,  F16K2099/0086 ,  F16K2099/0094 ,  Y10T137/7869 ,  Y10T137/7888 ,  Y10T137/7895

摘要： A microfluidic valve structure is provided. The valve structure includes a valve body having a fluid flow passage formed therein for allowing fluid to flow therethrough. A valve boss is configured to move relative to a valve seat to open and close the fluid flow passage. A plurality of flexible support arms extend between a wall of the valve body and the valve boss for supporting the valve boss relative to the valve body such that the valve boss engages and disengages the valve seat to close and open the passage.

摘要翻译： 提供微流体阀结构。 阀结构包括具有形成在其中以允许流体流过其中的流体流动通道的阀体。 阀座被构造成相对于阀座移动以打开和关闭流体流动通道。 多个柔性支撑臂在阀体的壁和阀座之间延伸，用于相对于阀体支撑阀座，使得阀座接合并脱离阀座以关闭和打开通道。

公开(公告)号：US20070072428A1

公开(公告)日：2007-03-29

申请号：US11239259

申请日：2005-09-29

申请人： Dan Chilcott

发明人： Dan Chilcott

IPC分类号： H01L21/311

CPC分类号： B81C1/00531 ,  B81B2203/033 ,  B81C2201/0132 ,  B81C2201/0142

摘要： A technique for manufacturing a micro-electro-mechanical (MEM) structure includes a number of steps. Initially, a substrate is provided. Next, a plurality of trenches are etched into the substrate with a first etch. Then, a charging layer is formed at a bottom of each of the trenches to form undercut trenches. Finally, a second etch is provided into the undercut trenches. The charging layer causes the second etch to laterally etch foots in the substrate between the undercut trenches. The footers undercut the substrate to release a portion of the substrate for providing a movable structure between the undercut trenches and above the footers.

摘要翻译： 微机电（MEM）结构的制造技术包括多个步骤。 首先，提供基板。 接下来，通过第一蚀刻将多个沟槽蚀刻到衬底中。 然后，在每个沟槽的底部形成充电层以形成底切沟槽。 最后，在底切沟槽中提供第二蚀刻。 充电层导致第二蚀刻在底切沟槽之间横向蚀刻衬底中的脚。 脚底底切基板以释放基板的一部分，以在底切沟槽和页脚之上提供可移动结构。

公开(公告)号：US20050098729A1

公开(公告)日：2005-05-12

申请号：US11003191

申请日：2004-12-03

申请人： David Lambert ,  Han-Sheng Lee ,  Dan Chilcott ,  Hamid Borzabadi ,  Qin Jiang ,  James Logsdon

发明人： David Lambert ,  Han-Sheng Lee ,  Dan Chilcott ,  Hamid Borzabadi ,  Qin Jiang ,  James Logsdon

IPC分类号： G01J5/08 ,  G01J5/12 ,  G01J5/02

CPC分类号： G01J5/0022 ,  G01J5/0025 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/045 ,  G01J5/06 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/0815 ,  G01J5/0853 ,  G01J5/0875 ,  G01J5/12

摘要： An infrared sensor including an absorber for absorbing incident infrared power to produce a signal representing the temperature of a target object, a frame supporting a membrane which carries the absorber, the frame including a plurality of reflecting surfaces disposed about the circumference of an opening over which the membrane spans for reflecting incident infrared power toward the absorber. By concentrating incident infrared power through reflection, the temperature difference between the absorber and the surrounding frame is increased, thereby producing an increased electrical output from the sensor.

摘要翻译： 一种红外线传感器，包括：吸收器，用于吸收入射的红外光，产生表示目标物体的温度的信号;支撑承载吸收体的膜的框架，所述框架包括围绕开口的圆周设置的多个反射面， 膜跨过来将反射入射的红外线朝向吸收体反射。 通过反射聚焦入射的红外线功率，吸收器和周围框架之间的温差增加，从而产生从传感器增加的电输出。

公开(公告)号：US20060234413A1

公开(公告)日：2006-10-19

申请号：US11105152

申请日：2005-04-13

申请人： Dan Chilcott

发明人： Dan Chilcott

IPC分类号： H01L21/00

CPC分类号： B81B3/001

摘要： A technique for forming anti-stiction bumps on a bottom surface of a micro-electro mechanical (MEM) structure includes a number of process steps. The MEM structure is fabricated from an assembly that includes a support substrate bonded to a single-crystal semiconductor layer, via an insulator layer. A plurality of holes are formed through the single-crystal semiconductor layer to the insulator layer on an interior portion of a defined movable structure. A portion of the insulator layer underneath the holes is removed. The holes are then filled with a conformal film that extends below a lower surface of the defined movable structure to provide a plurality of anti-stiction bumps. A trench is then formed through the single-crystal semiconductor layer to the insulator layer to form the defined movable structure. Finally, a remainder of the insulator layer underneath the defined movable structure is removed to free the defined movable structure.

摘要翻译： 在微机电（MEM）结构的底表面上形成抗静电凸块的技术包括多个工艺步骤。 MEM结构由包括通过绝缘体层结合到单晶半导体层的支撑衬底的组件制成。 在限定的可移动结构的内部，通过单晶半导体层形成多个孔至绝缘体层。 除去孔下方的绝缘体层的一部分。 然后用保形膜填充孔，该保形膜在限定的可移动结构的下表面下方延伸以提供多个抗静电凸块。 然后通过单晶半导体层形成沟槽到绝缘体层以形成限定的可移动结构。 最后，除去限定的可移动结构之下的绝缘体层的剩余部分以释放限定的可移动结构。

公开(公告)号：US20070072331A1

公开(公告)日：2007-03-29

申请号：US11238855

申请日：2005-09-29

申请人： Dan Chilcott

发明人： Dan Chilcott

IPC分类号： H01L21/00

CPC分类号： B81C1/00666 ,  B81B2203/0127 ,  B81C1/00246 ,  B81C2201/0191 ,  B81C2203/0728

摘要： A technique for manufacturing a micro-electro-mechanical (MEM) device includes a number of steps. Initially, a first wafer is provided. Next, a bonding layer is formed on a first surface of the first wafer. Then, a portion of the bonding layer is removed to provide a cavity including a plurality of spaced support pedestals within the cavity. Next, a second wafer is bonded to at least a portion of the bonding layer. A portion of the second wafer provides a diaphragm over the cavity and the support pedestals support the diaphragm during processing. The second wafer is then etched to release the diaphragm from the support pedestals.

摘要翻译： 微机电（MEM）装置的制造技术包括多个步骤。 首先，提供第一晶片。 接下来，在第一晶片的第一表面上形成接合层。 然后，去除接合层的一部分以提供在空腔内包括多个间隔开的支撑基座的空腔。 接下来，将第二晶片接合到粘合层的至少一部分。 第二晶片的一部分在空腔上提供隔膜，并且支撑基座在处理期间支撑隔膜。 然后蚀刻第二晶片以从支撑基座释放隔膜。

公开(公告)号：US20060281214A1

公开(公告)日：2006-12-14

申请号：US11151680

申请日：2005-06-13

申请人： Dan Chilcott

发明人： Dan Chilcott

IPC分类号： H01L21/00

CPC分类号： B81C1/00944 ,  B81C2201/0132

摘要： A process for making a microelectromechanical device having a moveable component defined by a gap pattern in a semiconductor layer of a silicon-on-insulator wafer involves the use of a plurality of deep reactive ion etching steps at various etch depths that are used to allow a buried oxide layer of the silicon-on-insulator wafer to be exposed in selected areas before the entire moveable component of the resulting device is freed for movement. This method allows wet release techniques to be used to remove the buried oxide layer without developing stiction problems. This is achieved by utilizing deep reactive ion etching to free the moveable component after a selected portion of the buried oxide layer has been removed by wet etching.

摘要翻译： 用于制造具有由绝缘体上硅晶片的半导体层中的间隙图案限定的可移动部件的微机电装置的方法包括在各种蚀刻深度处使用多个深反应离子蚀刻步骤，所述蚀刻深度用于允许 绝缘体上硅晶片的掩埋氧化物层在所得器件的整个可移动部件被释放以移动之前被暴露在所选区域内。 该方法允许使用湿式释放技术去除掩埋氧化物层而不产生粘性问题。 这是通过利用深反应离子蚀刻来在通过湿法蚀刻去除掩埋氧化物层的选定部分之后释放可移动部件来实现的。

公开(公告)号：US20060240583A1

公开(公告)日：2006-10-26

申请号：US11113554

申请日：2005-04-25

申请人： William Baney ,  Dan Chilcott

发明人： William Baney ,  Dan Chilcott

IPC分类号： H01L21/00

CPC分类号： B81C1/00158 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/014 ,  B81C2201/019 ,  G01L9/0042

摘要： A technique for manufacturing silicon structures includes etching a cavity into a first side of an epitaxial wafer. A thickness of an epitaxial layer is selected, based on a desired depth of the etched cavity and a desired membrane thickness. The first side of the epitaxial wafer is then bonded to a first side of a handle wafer. After thinning the epitaxial wafer until only the epitaxial layer remains, desired circuitry is formed on a second side of the remaining epitaxial layer, which is opposite the first side of the epitaxial wafer.

摘要翻译： 制造硅结构的技术包括将空腔蚀刻到外延晶片的第一侧。 基于蚀刻空腔的期望深度和期望的膜厚度来选择外延层的厚度。 然后将外延晶片的第一侧接合到处理晶片的第一侧。 在使外延晶片变薄直到只剩余外延层之后，在与外延晶片的第一侧相对的剩余外延层的第二侧上形成所需的电路。