发明申请
- 专利标题: Process of making an all-silicon microphone
- 专利标题(中): 制造全硅麦克风的过程
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申请号: US11010862申请日: 2004-12-13
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公开(公告)号: US20050101047A1公开(公告)日: 2005-05-12
- 发明人: John Freeman , William Baney , Timothy Betzner , Dan Chilcott , John Christenson , Timothy Vas , George Queen , Stephen Long
- 申请人: John Freeman , William Baney , Timothy Betzner , Dan Chilcott , John Christenson , Timothy Vas , George Queen , Stephen Long
- 专利权人: DELPHI TECHNOLOGIES, INC.
- 当前专利权人: DELPHI TECHNOLOGIES, INC.
- 主分类号: B81C1/00
- IPC分类号: B81C1/00 ; H01L21/00 ; H04R19/00 ; H04R25/00 ; H04R31/00
摘要:
A process of forming a capacitive audio transducer, preferably having an all-silicon monolithic construction that includes capacitive plates defined by doped single-crystal silicon layers. The capacitive plates are defined by etching the single-crystal silicon layers, and the capacitive gap therebetween is accurately established by wafer bonding, yielding a transducer that can be produced by high-volume manufacturing practices.
公开/授权文献
- US07134179B2 Process of forming a capacitative audio transducer 公开/授权日:2006-11-14
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