Abstract:
A chemical mechanical polish system for polishing a wafer includes a polishing head; an inner tube connected to the polishing head, wherein the inner tube is filled with a heat media; a media heater connected to the inner tube; and a pressure controller connected to the inner tube.
Abstract:
A thermoelectric wafer chuck is disclosed. The thermoelectric wafer chuck includes a wafer support surface for supporting a wafer; and a thermoelectric module provided in thermal contact with the wafer support surface for heating and/or cooling the wafer support surface and wafer.
Abstract:
A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure.
Abstract:
Systems and methods for temperature control of semiconductor wafers are provided. An exemplary embodiment of semiconductor wafer is held by an electrostatic chuck. An exemplary embodiment of system includes a cooling apparatus connecting the electrostatic chuck. The cooling apparatus comprises an inlet, an outlet, a porous flow layer, a porous contact layer contacting the electrostatic chuck, and a porous heat exchange layer disposed between the flow layer and the contact layer. The inlet communicates with the flow layer, and the outlet communicates with the contact layer. The fluid medium is introduced into the flow layer from the inlet and sequentially flows through the heat exchange layer and the contact layer. The fluid medium is discharged from the contact layer through the outlet, thereby exchanging heat from the semiconductor wafer.
Abstract:
Methods, systems, and computer programs that enable procurement risk to be efficiently and effectively managed and evaluated are described. In one aspect, inputs specifying one or more forward contracts in a sourcing portfolio for procuring a resource from one or more suppliers are received. Inputs specifying one or more aspects of a target sourcing strategy for procuring the resource also are received. A procurement risk evaluation report comparing the sourcing portfolio and the target sourcing strategy is presented.
Abstract:
Systems and methods for managing procurement risk are described. In accordance with a procurement risk management method, a resource sourcing mix is computed from a sourcing portfolio of one or more forward contracts, spot market purchases, and inventory depletion for each period of a planning horizon based on forecast scenarios for resource demand, resource price, and resource availability and a specified inventory carrying policy for the resource. Based upon the computed resource sourcing mix, one or more metrics for evaluating the sourcing portfolio are computed. A system and a computer program implementing the above-described procurement risk management method also are described.
Abstract:
Methods, systems, and computer programs that enable procurement risk to be efficiently and effectively managed and evaluated are described. In one aspect, inputs specifying one or more forward contracts in a sourcing portfolio for procuring a resource from one or more suppliers are received. Inputs specifying one or more aspects of a target sourcing strategy for procuring the resource also are received. A procurement risk evaluation report comparing the sourcing portfolio and the target sourcing strategy is presented.
Abstract:
A chemical mechanical polish system includes a polishing pad, a platen supporting and rotating the polishing pad, a top slurry dispenser placed over a polishing pad, a bottom slurry dispenser placed through an opening in the polishing pad, and a duct connected to the bottom slurry dispenser, the duct extending toward the bottom of the polishing pad.
Abstract:
Apparatus for polishing are provided. An apparatus comprises a fluid controller, a polishing apparatus and a fluid interface membrane. The fluid controller is fluidly coupled to the polishing apparatus by way of at least one conduit. The fluid interface membrane is disposed within at least one of the fluid controller, the conduit and the polishing apparatus to separate a first fluid and a second fluid and to transfer pressure from the first fluid to the second fluid.
Abstract:
A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure.