Invention Grant
- Patent Title: PVD target with end of service life detection capability
- Patent Title (中): PVD目标，具有使用寿命检测功能
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Application No.: US11427602Application Date: 2006-06-29
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Publication No.: US08795486B2Publication Date: 2014-08-05
- Inventor: Yi-Li Hsiao , Jerry Hwang , Jyh-Cherng Sheu , Lawrance Sheu , Jean Wang , Chen-Hua Yu
- Applicant: Yi-Li Hsiao , Jerry Hwang , Jyh-Cherng Sheu , Lawrance Sheu , Jean Wang , Chen-Hua Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: C23C14/54
- IPC: C23C14/54
Abstract:
A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure.
Public/Granted literature
- US20070068803A1 PVD TARGET WITH END OF SERVICE LIFE DETECTION CAPABILITY Public/Granted day:2007-03-29
Information query
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