公开(公告)号：US07978398B2

公开(公告)日：2011-07-12

申请号：US11958494

申请日：2007-12-18

申请人： Jae-young Choi ,  Jai-yong Han

发明人： Jae-young Choi ,  Jai-yong Han

IPC分类号： G02B26/00

CPC分类号： G02F1/167 ,  G02F2001/1672 ,  G02F2001/1674 ,  G02F2001/1678

摘要： An electrophoretic particle includes ionic liquid stored in a spherical polymer shell and a charged layer formed on an inner surface of the shell, and a display device includes the electrophoretic particle. The shell is not charged, and the charged layer in the shell is charged. Therefore, particles having different polarities from each other do not stick to each other. Since the electrophoretic particles are dispersed in air, a high response speed can be achieved, a large amount of charges can be formed by the ionic liquid and the charged layer contacting the ionic liquid, and thus, the particles can move with a low driving voltage.

摘要翻译： 电泳粒子包括存储在球形聚合物壳体中的离子液体和形成在壳体的内表面上的带电层，显示装置包括电泳粒子。 壳体不带电，壳体中的带电层被充电。 因此，彼此不同的极性的颗粒彼此不粘附。 由于电泳粒子分散在空气中，所以可以实现高的响应速度，离子液体和与离子液体接触的带电层可以形成大量的电荷，因此粒子可以以低的驱动电压移动 。

公开(公告)号：US20090034056A1

公开(公告)日：2009-02-05

申请号：US12126506

申请日：2008-05-23

申请人： Jae-young CHOI ,  Jai-yong Han

发明人： Jae-young CHOI ,  Jai-yong Han

IPC分类号： G02F1/167

CPC分类号： G02F1/167 ,  G02F2001/1678

摘要： Provided is an electrophoretic display device. The electrophoretic display device includes a first substrate and a second substrate forming a space receiving electrophoretic particles, and a first electrode and a second electrode formed on the first substrate and the second substrate respectively. The electrophoretic particles include reflective particles having a first electric polarity and reflecting a first light in visible wavelength bands, and light emission particles having a second electric polarity and emitting a second light by an optical stimulation. The first and second lights are in a substantially same color range of wavelength in a same pixel region.

摘要翻译： 提供一种电泳显示装置。 电泳显示装置包括第一基板和形成接收电泳颗粒的空间的第二基板，以及分别形成在第一基板和第二基板上的第一电极和第二电极。 电泳粒子包括具有第一电极性并反射可见波长带中的第一光的反射粒子和具有第二电极性并通过光学刺激发射第二光的发光粒子。 第一和第二光在相同像素区域中具有基本上相同的波长的颜色范围。

公开(公告)号：US08018430B2

公开(公告)日：2011-09-13

申请号：US11948242

申请日：2007-11-30

申请人： Jae-young Choi ,  Jai-yong Han

发明人： Jae-young Choi ,  Jai-yong Han

IPC分类号： G09G3/34

CPC分类号： G02F1/167 ,  G02F2001/1676 ,  G02F2001/1678 ,  G02F2203/34

摘要： Electrophoretic particles and dielectrophoretic particles are included together in a unit pixel. Each of the electrophoretic particles and the dielectrophoretic particles includes two kinds of particles having different electric properties. The electrophoretic particles include positively charged particles and negatively charged particles. The dielectrophoretic particles include particles having low dielectric constant and particles having high dielectric constant. A first electric field for moving the electrophoretic particles and a second electric field for moving the dielectrophoretic particles are applied to the unit pixel. The second electric field has an asymmetric gradient in the direction where the dielectrophoretic particles move to determine movement directions of the dielectrophoretic particles having different dielectric constants.

摘要翻译： 电泳粒子和介电电泳粒子一起包含在单位像素中。 电泳粒子和介电电泳粒子各自包含具有不同电特性的两种粒子。 电泳粒子包括带正电的粒子和带负电粒子。 介电电泳颗粒包括具有低介电常数的颗粒和具有高介电常数的颗粒。 用于移动电泳颗粒的第一电场和用于移动介电电泳颗粒的第二电场施加到单位像素。 第二电场在介电电泳颗粒移动的方向上具有不对称梯度，以确定具有不同介电常数的介电电泳颗粒的移动方向。

公开(公告)号：US08018429B2

公开(公告)日：2011-09-13

申请号：US11948217

申请日：2007-11-30

申请人： Jae-young Choi ,  Jai-yong Han

发明人： Jae-young Choi ,  Jai-yong Han

IPC分类号： G09G3/34

CPC分类号： G09G3/344

摘要： A surface plasmon display device includes metal particles having a constant size within all of the pixel regions between a first electrode and a second electrode and a dielectric layer corresponding to each of the pixel regions formed on an inner surface of a first substrate, wherein the dielectric layer in each of the pixel regions has physical properties for causing the surface plasmon resonance corresponding to a wavelength designated to the corresponding pixel region.

摘要翻译： 表面等离子体显示装置包括在第一电极和第二电极之间的所有像素区域内具有恒定尺寸的金属颗粒和对应于形成在第一基板的内表面上的每个像素区域的电介质层，其中电介质 每个像素区域中的层具有用于引起对应于对应于像素区域的波长的表面等离子体共振的物理特性。

公开(公告)号：US07869117B2

公开(公告)日：2011-01-11

申请号：US12126506

申请日：2008-05-23

申请人： Jae-young Choi ,  Jai-yong Han

发明人： Jae-young Choi ,  Jai-yong Han

IPC分类号： G02B26/00 ,  G09G3/34

CPC分类号： G02F1/167 ,  G02F2001/1678

摘要： Provided is an electrophoretic display device. The electrophoretic display device includes a first substrate and a second substrate forming a space receiving electrophoretic particles, and a first electrode and a second electrode formed on the first substrate and the second substrate respectively. The electrophoretic particles include reflective particles having a first electric polarity and reflecting a first light in visible wavelength bands, and light emission particles having a second electric polarity and emitting a second light by an optical stimulation. The first and second lights are in a substantially same color range of wavelength in a same pixel region.

摘要翻译： 提供一种电泳显示装置。 电泳显示装置包括第一基板和形成接收电泳颗粒的空间的第二基板，以及分别形成在第一基板和第二基板上的第一电极和第二电极。 电泳粒子包括具有第一电极性并反射可见波长带中的第一光的反射粒子和具有第二电极性并通过光学刺激发射第二光的发光粒子。 第一和第二光在相同像素区域中具有基本上相同的波长的颜色范围。

公开(公告)号：US07462893B2

公开(公告)日：2008-12-09

申请号：US11545520

申请日：2006-10-11

申请人： Jai-yong Han ,  Jun-sung Choi ,  In-jae Song

发明人： Jai-yong Han ,  Jun-sung Choi ,  In-jae Song

IPC分类号： H01L31/071 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02658

摘要： A method of fabricating a thick gallium nitride (GaN) layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCI and NH3 gas atmosphere and forming an in-situ GaN growth layer in the reaction chamber. The method of forming the porous GaN layer and the thick GaN layer in-situ proceeds in a single chamber. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN etching and growth are performed using an HVPE process gas such that costs are greatly reduced.

摘要翻译： 制造厚氮化镓（GaN）层的方法包括通过在HCl和NH 3气体气氛中的反应室中蚀刻GaN衬底来形成厚度为10-1000nm的多孔GaN层，并形成原位GaN生长 在反应室中。 在单个室中原位形成多孔GaN层和厚GaN层的方法。 与现有技术相比，该方法非常简单。 以这种方式，整个工艺在一个室中进行，特别是使用HVPE工艺气体进行GaN蚀刻和生长，使得成本大大降低。

公开(公告)号：US20070092980A1

公开(公告)日：2007-04-26

申请号：US11545520

申请日：2006-10-11

申请人： Jai-yong Han ,  Jun-sung Choi ,  In-jae Song

发明人： Jai-yong Han ,  Jun-sung Choi ,  In-jae Song

IPC分类号： H01L21/00

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02658

摘要： A method of fabricating a thick GaN layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCl and NH3 gas atmosphere and forming an in-situ GaN growth layer in the reaction chamber. The method of forming the porous GaN layer and the thick GaN layer in-situ proceeds in a single chamber. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN etching and growth are performed using an HVPE process gas such that costs are greatly reduced.

摘要翻译： 制造厚GaN层的方法包括通过在HCl和NH 3气体气氛中在反应室中蚀刻GaN衬底来形成厚度为10-1000nm的多孔GaN层，并形成 在反应室中生长层。 在单个室中原位形成多孔GaN层和厚GaN层的方法。 与现有技术相比，该方法非常简单。 以这种方式，整个工艺在一个室中进行，特别是使用HVPE工艺气体进行GaN蚀刻和生长，使得成本大大降低。

公开(公告)号：US07449066B2

公开(公告)日：2008-11-11

申请号：US11937017

申请日：2007-11-08

申请人： Jai-yong Han

发明人： Jai-yong Han

IPC分类号： C30B35/00

CPC分类号： C30B29/406 ,  C30B25/00 ,  C30B25/02 ,  C30B25/08 ,  C30B29/64 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016

摘要： An apparatus for fabricating a GaN single crystal and a fabrication method for producing GaN single crystal ingot are provided. The apparatus includes: a reactor including a ceiling, a floor and a wall with a predetermined height encompassing an internal space between the ceiling and the floor, wherein the ceiling is opposite to the floor; a quartz vessel on the floor containing Ga metal; a mount installed on the ceiling on which a GaN substrate is mounted, the GaN substrate being opposite to the quartz vessel; a first gas supplying unit supplying the quartz vessel with hydrogen chloride (HCl) gas; a second gas supplying unit supplying the internal space of the reactor with ammonia (NH3) gas; and a heating unit installed in conjunction with the wall of the reactor for heating the internal space, wherein the lower portion of the internal space is heated to a higher temperature than the upper portion.

公开(公告)号：US20060169200A1

公开(公告)日：2006-08-03

申请号：US11220709

申请日：2005-09-08

申请人： Jai-yong Han

发明人： Jai-yong Han

IPC分类号： C30B11/00

CPC分类号： C30B29/406 ,  C30B25/00 ,  C30B25/02 ,  C30B25/08 ,  C30B29/64 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016

摘要： An apparatus for fabricating a GaN single crystal and a fabrication method for producing GaN single crystal ingot are provided. The apparatus includes: a reactor including a ceiling, a floor and a wall with a predetermined height encompassing an internal space between the ceiling and the floor, wherein the ceiling is opposite to the floor; a quartz vessel on the floor containing Ga metal; a mount installed on the ceiling on which a GaN substrate is mounted, the GaN substrate being opposite to the quartz vessel; a first gas supplying unit supplying the quartz vessel with hydrogen chloride (HCl) gas; a second gas supplying unit supplying the internal space of the reactor with ammonia (NH3) gas; and a heating unit installed in conjunction with the wall of the reactor for heating the internal space, wherein the lower portion of the internal space is heated to a higher temperature than the upper portion.

摘要翻译： 提供一种用于制造GaN单晶的装置和用于制造GaN单晶锭的制造方法。 该装置包括：包括天花板，地板和具有预定高度的壁的反应器，其包围天花板和地板之间的内部空间，其中天花板与地板相对; 位于地板上的含有Ga金属的石英容器; 安装在其上安装GaN衬底的天花板上的安装座，所述GaN衬底与所述石英容器相对; 向石英容器供应氯化氢（HCl）气体的第一气体供给单元; 向反应器的内部空间供应氨（NH 3）气体的第二气体供给单元; 以及与反应器的壁结合安装的用于加热内部空间的加热单元，其中内部空间的下部被加热到比上部更高的温度。

公开(公告)号：US08349076B2

公开(公告)日：2013-01-08

申请号：US11545518

申请日：2006-10-11

申请人： In-Jae Song ,  Jai-yong Han

发明人： In-Jae Song ,  Jai-yong Han

IPC分类号： C30B25/00

CPC分类号： C30B33/06 ,  C30B25/183 ,  C30B25/186 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664

摘要： A method of fabricating a freestanding gallium nitride (GaN) substrate includes: preparing a GaN substrate within a reactor; supplying HCl and NH3 gases into the reactor to treat the surface of the GaN substrate and forming a porous GaN layer; forming a GaN crystal growth layer on the porous GaN layer; and cooling the GaN substrate on which the GaN crystal growth layer has been formed and separating the GaN crystal growth layer from the substrate. According to the fabrication method, the entire process including forming a porous GaN layer and a thick GaN layer is performed in-situ within a single reactor. The method is significantly simplified compared to a conventional fabrication method. The fabrication method enables the entire process to be performed in one chamber while allowing GaN surface treatment and growth to be performed using HVPE process gases, thus resulting in a significant reduction in manufacturing costs. The fabrication method also allows self-separation of thick GaN without cracking, thus achieving a short process time and a high manufacturing yield.

摘要翻译： 制造独立氮化镓（GaN）衬底的方法包括：在反应器内制备GaN衬底; 将HCl和NH 3气体供应到反应器中以处理GaN衬底的表面并形成多孔GaN层; 在多孔GaN层上形成GaN晶体生长层; 并冷却已经形成GaN晶体生长层的GaN衬底，并从衬底分离出GaN晶体生长层。 根据制造方法，在单个反应器内原位进行包括形成多孔GaN层和厚GaN层的整个工艺。 与常规制造方法相比，该方法显着简化。 该制造方法能够在一个室中进行整个工艺，同时使用HVPE工艺气体进行GaN表面处理和生长，从而显着降低制造成本。 制造方法还允许厚的GaN的自分离而不产生裂纹，从而实现短的工艺时间和高的制造成品率。