公开(公告)号：US08178951B2

公开(公告)日：2012-05-15

申请号：US12442156

申请日：2007-11-15

申请人： Young Zo Yoo ,  Hyun Min Shin ,  Jun Sung Choi

发明人： Young Zo Yoo ,  Hyun Min Shin ,  Jun Sung Choi

IPC分类号： H01L23/58 ,  H01L29/20

CPC分类号： H01L21/2654 ,  C30B31/20 ,  H01L21/0445 ,  H01L21/263 ,  H01L21/2656 ,  H01L21/26586 ,  H01L21/3228 ,  H01L21/3245 ,  H01L21/425 ,  H01L29/2003 ,  H01L29/36 ,  H01L33/325

摘要： There is provided a compound semiconductor substrate prepared by forming a point defect in an inside structure thereof by implanting an electrically-neutral impurity with energy of 0.1 to 10 MeV on a surface of the substrate. When the compound semiconductor is undoped, electrical resistance increases to increase insulating properties, and when the compound semiconductor is doped with an n-type dopant, the impurity is implanted and charge concentration of the substrate increases to increase conductive properties. In accordance with the present invention, the various electrical properties needed for the compound semiconductor can be effectively controlled by increasing the insulating properties of the undoped compound semiconductor or by increasing the charge concentration of the n-type compound semiconductor, and the application range to various devices can be expanded.

摘要翻译： 提供了通过在基板的表面上注入能量为0.1〜10MeV的电中性杂质，通过在其内部结构中形成点缺陷而制备的化合物半导体基板。 当化合物半导体未掺杂时，电阻增加以增加绝缘性能，并且当化合物半导体掺杂有n型掺杂剂时，注入杂质并且衬底的电荷浓度增加以增加导电性能。 根据本发明，可以通过增加未掺杂的化合物半导体的绝缘性能或通过增加n型化合物半导体的电荷浓度来有效地控制化合物半导体所需的各种电性能，并将应用范围应用于各种 设备可以扩展。

公开(公告)号：US20130029472A1

公开(公告)日：2013-01-31

申请号：US13559357

申请日：2012-07-26

申请人： BONGMO PARK ,  Kwang Je Woo ,  Jun Sung Choi ,  Bo Hyun Lee ,  Seung Yong Park

发明人： BONGMO PARK ,  Kwang Je Woo ,  Jun Sung Choi ,  Bo Hyun Lee ,  Seung Yong Park

IPC分类号： H01L21/02

CPC分类号： C30B29/406 ,  C30B33/06 ,  H01L33/0075 ,  H01L33/0079

摘要： A gallium nitride (GaN) bonded substrate and a method of manufacturing a GaN bonded substrate in which a polycrystalline nitride-based substrate is used. The method includes loading a single crystalline GaN substrate and a polycrystalline nitride substrate into a bonder; raising the temperature in the bonder; bonding the single crystalline GaN substrate and the polycrystalline nitride substrate together by pressing the single crystalline GaN substrate and the polycrystalline nitride substrate against each other after the step of raising the temperature; and cooling the resultant bonded substrate.

摘要翻译： 氮化镓（GaN）键合衬底以及其中使用多晶氮化物基衬底的GaN键合衬底的制造方法。 该方法包括将单晶GaN衬底和多晶氮化物衬底加载到焊接机中; 提高粘结机的温度; 在提高温度的步骤之后，通过将单晶GaN衬底和多晶氮化物衬底压在一起，将单晶GaN衬底和多晶氮化物衬底结合在一起; 并冷却所得的键合衬底。

公开(公告)号：US20090230513A1

公开(公告)日：2009-09-17

申请号：US12442156

申请日：2007-11-15

申请人： Young Zo Yoo ,  Hyun Min Shin ,  Jun Sung Choi

发明人： Young Zo Yoo ,  Hyun Min Shin ,  Jun Sung Choi

IPC分类号： H01L29/36 ,  H01L21/265

CPC分类号： H01L21/2654 ,  C30B31/20 ,  H01L21/0445 ,  H01L21/263 ,  H01L21/2656 ,  H01L21/26586 ,  H01L21/3228 ,  H01L21/3245 ,  H01L21/425 ,  H01L29/2003 ,  H01L29/36 ,  H01L33/325

摘要： There is provided a compound semiconductor substrate prepared by forming a point defect in an inside structure thereof by implanting an electrically-neutral impurity with energy of 0.1 to 10MeV on a surface of the substrate. When the compound semiconductor is undoped, electrical resistance increases to increase insulating properties, and when the compound semiconductor is doped with an n-type dopant, the impurity is implanted and charge concentration of the substrate increases to increase conductive properties. In accordance with the present invention, the various electrical properties needed for the compound semiconductor can be effectively controlled by increasing the insulating properties of the undoped compound semiconductor or by increasing the charge concentration of the n-type compound semiconductor, and the application range to various devices can be expanded.

摘要翻译： 提供了通过在基板的表面上注入0.1〜10MeV的能量的电中性杂质，通过在其内部结构中形成点缺陷而制备的化合物半导体基板。 当化合物半导体未掺杂时，电阻增加以增加绝缘性能，并且当化合物半导体掺杂有n型掺杂剂时，注入杂质并且衬底的电荷浓度增加以增加导电性能。 根据本发明，可以通过增加未掺杂的化合物半导体的绝缘性能或通过增加n型化合物半导体的电荷浓度来有效地控制化合物半导体所需的各种电性能，并将应用范围应用于各种 设备可以扩展。

公开(公告)号：US20080067543A1

公开(公告)日：2008-03-20

申请号：US11807464

申请日：2007-05-29

申请人： Hyun Min Shin ,  Sun Hwan Kong ,  Ki Soo Lee ,  Jun Sung Choi

发明人： Hyun Min Shin ,  Sun Hwan Kong ,  Ki Soo Lee ,  Jun Sung Choi

IPC分类号： H01L21/205 ,  C30B25/02 ,  H01L29/12

CPC分类号： C30B25/18 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262

摘要： A method of manufacturing a single crystalline gallium nitride (GaN) thick film by using a hydride gas phase epitaxy (HVPE), more particularly, the method of manufacturing c-plane ({0001}) of a single crystalline GaN thick film by using the HVPE. A GaN film is grown on a substrate by providing a hydrogen chloride (HCl) gas and an ammonia (NH3) gas, thereby obtaining the GaN film on the substrate, and a GaN thick film on the GaN film on the substrate is grown.

摘要翻译： 通过使用氢化物​​气相外延（HVPE）制造单晶氮化镓（GaN）厚膜的方法，更具体地，通过使用单晶GaN厚膜的制造c面（{0001}）的方法 HVPE。 通过提供氯化氢（HCl）气体和氨气（NH 3 3 N）气体在衬底上生长GaN膜，从而在衬底上获得GaN膜，并且在GaN上形成GaN厚膜 生长衬底上的膜。

公开(公告)号：US07462893B2

公开(公告)日：2008-12-09

申请号：US11545520

申请日：2006-10-11

申请人： Jai-yong Han ,  Jun-sung Choi ,  In-jae Song

发明人： Jai-yong Han ,  Jun-sung Choi ,  In-jae Song

IPC分类号： H01L31/071 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02658

摘要： A method of fabricating a thick gallium nitride (GaN) layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCI and NH3 gas atmosphere and forming an in-situ GaN growth layer in the reaction chamber. The method of forming the porous GaN layer and the thick GaN layer in-situ proceeds in a single chamber. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN etching and growth are performed using an HVPE process gas such that costs are greatly reduced.

摘要翻译： 制造厚氮化镓（GaN）层的方法包括通过在HCl和NH 3气体气氛中的反应室中蚀刻GaN衬底来形成厚度为10-1000nm的多孔GaN层，并形成原位GaN生长 在反应室中。 在单个室中原位形成多孔GaN层和厚GaN层的方法。 与现有技术相比，该方法非常简单。 以这种方式，整个工艺在一个室中进行，特别是使用HVPE工艺气体进行GaN蚀刻和生长，使得成本大大降低。

公开(公告)号：US20070092980A1

公开(公告)日：2007-04-26

申请号：US11545520

申请日：2006-10-11

申请人： Jai-yong Han ,  Jun-sung Choi ,  In-jae Song

发明人： Jai-yong Han ,  Jun-sung Choi ,  In-jae Song

IPC分类号： H01L21/00

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02658

摘要： A method of fabricating a thick GaN layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCl and NH3 gas atmosphere and forming an in-situ GaN growth layer in the reaction chamber. The method of forming the porous GaN layer and the thick GaN layer in-situ proceeds in a single chamber. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN etching and growth are performed using an HVPE process gas such that costs are greatly reduced.

摘要翻译： 制造厚GaN层的方法包括通过在HCl和NH 3气体气氛中在反应室中蚀刻GaN衬底来形成厚度为10-1000nm的多孔GaN层，并形成 在反应室中生长层。 在单个室中原位形成多孔GaN层和厚GaN层的方法。 与现有技术相比，该方法非常简单。 以这种方式，整个工艺在一个室中进行，特别是使用HVPE工艺气体进行GaN蚀刻和生长，使得成本大大降低。