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    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same
    1.
    发明授权
    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
    使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法

    公开(公告)号：US07329477B2

    公开(公告)日：2008-02-12

    申请号：US10993869

    申请日：2004-11-19

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/11 ,  G03F7/0045

    摘要： The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

    摘要翻译： 本发明提供了使用胺类污染物保护性顶涂层组合物的方法。 优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。 有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。 本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案 涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物 紫外线（EUV）。

    Additives for improving post exposure delay stability of photoresist
    2.
    发明授权
    Additives for improving post exposure delay stability of photoresist 失效
    用于改善光刻胶曝光延迟稳定性的添加剂

    公开(公告)号：US06514665B1

    公开(公告)日：2003-02-04

    申请号：US09651809

    申请日：2000-08-30

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/106

    摘要： The present invention relates to a compound that is useful as an additive for improving post exposure delay stability in a photoresist composition, and a photoresist composition containing the same. In particular, it has been found that a compound of the formula: where A, R1 to R3 are defined herein, can efficiently prevent or reduce the phenomenon of a lack of pattern formation and T-topping resulting from post exposure delay (PED) by reducing influences of environmental amine compounds. PED is a disadvantage of alicyclic compounds used in the lithography process using light sources such as KrF, ArF, VUV, E-beam, ion beam and EUV.

    摘要翻译： 本发明涉及可用作改善光致抗蚀剂组合物中的曝光后延迟稳定性的添加剂的化合物和含有它们的光致抗蚀剂组合物。 特别地，已经发现，下式化合物：其中A，R 1至R 3在本文中定义，可以有效地防止或减少由后曝光延迟（PED）引起的图案形成和T形顶部缺乏的现象 减少环境胺化合物的影响。 PED是使用诸如KrF，ArF，VUV，电子束，离子束和EUV的光源的光刻工艺中使用的脂环族化合物的缺点。

    Monomers for photoresist, polymers thereof, and photoresist compositions using the same
    4.
    发明授权
    Monomers for photoresist, polymers thereof, and photoresist compositions using the same 失效

    公开(公告)号：US06291131B1

    公开(公告)日：2001-09-18

    申请号：US09383547

    申请日：1999-08-26

    申请人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： C07D493/08 ,  C07C61/13 ,  C07C69/753 ,  C07D495/08 ,  C08F222/06 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/039 ,  Y02P20/55 ,  Y10S430/127

    摘要： The present invention relates to novel monomers for preparing photoresist polymers, polymers thereof, and photoresist compositions using the same. The monomers of the iinvention are represented by the following Chemical Formula 1: wherein, X and Y individually represent oxygen, sulfur, CH2 or CH2CH2; n is an integer of 1 to 5; and R1, R2, R3 and R4 individually represent hydrogen, C1-C10 alkyl having substituent(s) on its main or branched chain, C1-C10 ester having substituent(s) on its main or branched chain, C1-C10 ketone having substituent(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) on its main or branched chain, C1-C10 acetal having substituent(s) on its main or branched chain, C1-C10 alkyl having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 ester having substituent(s) including one or more hydroxyl group(s ) on its main or branched chain, C1-C10 ketone having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, or C1-C10 acetal having substituent(s) including one or more hydroxyl group(s) on its main or branched chain; provided that at least one of R1 to R4 represent(s) —COO—R′—OH wherein R′ is a linear or branched chain alkyl group with or without substituent(s) on its linear or branched chain. Polymers according to the present invention preferably comprise (i) a monomer of Chemical Formula 1 above as the first comonomer, (ii) a polyalicyclic derivative having one or more acid labile protective group(s) as the second comonomer, and (iii) at least one polymerization-enhancing monomer, preferably selected from the group consisting of maleic anhydride, maleimide derivatives, and combinations thereof. In order to increase photosensitivity, it is also preferable for the photoresist copolymer to comprise (iv) a polyalicyclic derivative having one or more carboxylic acid groups, as an additional comonomer.

    Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same
    6.
    发明授权
    Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same 有权
    用于光致抗蚀剂的交联单体，以及使用其制备光致抗蚀剂聚合物的方法

    公开(公告)号：US07208260B2

    公开(公告)日：2007-04-24

    申请号：US10080507

    申请日：2002-02-22

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Balk

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Balk

    IPC分类号： G03C1/73 ,  G03F7/038 ,  G03F7/039 ,  G03F7/30 ,  C08F232/00

    CPC分类号： G03F7/039 ,  C07C69/54 ,  C08F22/105 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: wherein, R′ and R″ individually represent hydrogen or methyl; m represents a number of 1 to 10; and R is selected from the group consisting of straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.

    摘要翻译： 本发明公开了由以下化学式1表示的交联单体，使用该交联单体的光致抗蚀剂聚合物的制备方法，所述光致抗蚀剂聚合物：其中，R'和R“分别表示氢或甲基 ; m表示1〜10的数; 并且R选自直链或支链C 1-10烷基，直链或支链C 1-10 1-10酯，直链或支链C 1〜 直链或支链C 1-10 1-10羧酸，直链或支链C 1-10 - 缩醛，直链或支链C 1-10 包括至少一个羟基，直链或支链C 1-10 1-10酯，包括至少一个羟基，直链或支链C 1-10 1-10酮，包括 至少一个羟基，包括至少一个羟基的直链或支链C 1-10 - 羧酸，和包含至少一个羟基的直链或支链C 1-10 - 组。

    Cleaning solution for removing photoresist
    7.
    发明授权
    Cleaning solution for removing photoresist 有权
    用于除去光致抗蚀剂的清洁溶液

    公开(公告)号：US07563753B2

    公开(公告)日：2009-07-21

    申请号：US10317578

    申请日：2002-12-12

    申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin ,  Keun Kyu Kong ,  Sung Koo Lee ,  Young Sun Hwang

    发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin ,  Keun Kyu Kong ,  Sung Koo Lee ,  Young Sun Hwang

    IPC分类号： C11D7/50

    CPC分类号： C11D3/3738 ,  C11D1/44 ,  C11D1/72 ,  C11D1/721 ,  C11D1/722 ,  C11D3/373 ,  C11D3/3742 ,  C11D7/263 ,  C11D7/265 ,  C11D7/267 ,  C11D7/3218 ,  C11D7/34 ,  C11D11/0047 ,  G03F7/422

    摘要： Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.

    摘要翻译： 公开了用于除去光致抗蚀剂树脂的清洁溶液和使用其形成图案的方法。 清洗溶液包括作为主要成分的水（H 2 O），一种或多种作为添加剂的表面活性剂，其选自聚氧化烯化合物，式1的醇胺盐和具有羧酸（-COOH）基团的烃化合物， 式1的醇胺和具有磺酸（-SO 3 H）基团的烃化合物，聚乙二醇化合物，式3化合物，分子量为1000至10000的化合物，包括式4的重复单元，聚醚变性硅化合物和醇化合物 。 其中R1，R2，R3，R4，R5，A，1和n在本说明书中定义。

    Cross-linker monomer comprising double bond and photoresist copolymer containing the same
    8.
    发明授权
    Cross-linker monomer comprising double bond and photoresist copolymer containing the same 有权
    包含双键的交联剂单体和含有它们的光致抗蚀剂共聚物

    公开(公告)号：US06818376B2

    公开(公告)日：2004-11-16

    申请号：US10120197

    申请日：2002-04-09

    申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/111

    摘要： The present invention provides a cross-linker monomer of formula 1, a photoresist polymer derived from a monomer comprising the same, and a photoresist composition comprising the photoresist polymer. The cross-linking unit of the photoresist polymer can be hydrolyzed (or degraded or broken) by an acid generated from a photoacid generator on the exposed region. It is believed that this acid degradation of the cross-linking unit increases the contrast ratio between the exposed region and the unexposed region. The photoresist composition of the present invention has improved pattern profile, enhanced adhesiveness, excellent resolution, sensitivity, durability and reproducibility. where A, B, R1, R2, R3, R4, R5, R6 and k are as defined herein.

    摘要翻译： 本发明提供了式1的交联剂单体，衍生自包含其的单体的光致抗蚀剂聚合物和包含光致抗蚀剂聚合物的光致抗蚀剂组合物。 光致抗蚀剂聚合物的交联单元可以通过暴露区域上的光致酸发生器产生的酸水解（或降解或破坏）。 据信交联单元的酸降解增加了曝光区域与未曝光区域之间的对比度。 本发明的光致抗蚀剂组合物具有改进的图案轮廓，增强的粘合性，优异的分辨率，灵敏度，耐久性和再现性。其中A，B，R1，R2，R3，R4，R5，R6和k如本文所定义。

    Photoresist monomers, polymers thereof and photoresist compositions using the same
    9.
    发明授权
    Photoresist monomers, polymers thereof and photoresist compositions using the same 失效
    光致抗蚀剂单体，其聚合物和使用其的光致抗蚀剂组合物

    公开(公告)号：US06753448B2

    公开(公告)日：2004-06-22

    申请号：US10330869

    申请日：2002-12-26

    申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

    IPC分类号： C07C49205

    CPC分类号： G03F7/0397 ,  G03F7/0395 ,  Y10S430/106

    摘要： The present invention provides compounds represented by formulas 1a and 1b′; and photoresist polymers derived from the same. The present inventors have found that photoresist polymers derived from compounds of formulas 1a, 1b, or mixtures thereof, having an acid labile protecting group have excellent durability, etching resistance, reproducibility, adhesiveness and resolution, and as a result are suitable for lithography processes using deep ultraviolet light sources such as KrF, ArF, VUV, EUV, electron-beam, and X-ray, which can be applied to the formation of the ultrafine pattern of 4G and 16G DRAMs as well as the DRAM below 1G: where R1, R2 and R3 are those defined herein.

    摘要翻译： 本发明提供由式1a和1b'表示的化合物; 和衍生自其的光致抗蚀剂聚合物。 本发明人已经发现，具有酸不稳定保护基的衍生自式Ia，1b化合物或其混合物的光致抗蚀剂聚合物具有优异的耐久性，耐腐蚀性，再现性，粘合性和分辨率，因此适用于使用 深紫外光源如KrF，ArF，VUV，EUV，电子束和X射线，可用于形成4G和16G DRAM的超细格局以及低于1G的DRAM：其中R1， R2和R3是本文定义的那些。

    Photoresist monomer comprising bisphenol derivatives and polymers thereof
    10.
    发明授权
    Photoresist monomer comprising bisphenol derivatives and polymers thereof 失效
    包含双酚衍生物的光敏单体及其聚合物

    公开(公告)号：US06627383B2

    公开(公告)日：2003-09-30

    申请号：US09973630

    申请日：2001-10-09

    申请人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03C1492

    CPC分类号： G03F7/0046 ,  C07C69/65 ,  C07C69/653 ,  C08F20/30 ,  G03F7/039 ,  G03F7/0392 ,  Y02P20/55 ,  Y10S430/108

    摘要： Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions using the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at the wavelength of 193 nm, 157 nm and 13 nm, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) and EUV (13 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, R1, R2, R3, Y, W, m and n are as defined in the specification.

    摘要翻译： 下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和使用其的光致抗蚀剂组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物在193nm，157nm和13nm波长处具有低吸光度，因此适用于在制造中使用诸如VUV（157nm）和EUV（13nm）的紫外光源的光刻工艺 用于高集成半导体器件的分钟电路。其中R1，R2，R3，Y，W，m和n如本说明书中所定义。