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    SELF-ALIGNED TOP VIA
    1.
    发明申请
    SELF-ALIGNED TOP VIA 有权

    公开(公告)号：US20210151377A1

    公开(公告)日：2021-05-20

    申请号：US16685192

    申请日：2019-11-15

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Chi-Chun Liu ,  John C. Arnold ,  Dominik Metzler ,  Nelson Felix ,  Ashim Dutta

    IPC分类号： H01L23/538 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/762

    摘要： A method of forming a self-aligned top via is provided. The method includes forming a metallization layer on a substrate, and forming a hardmask layer on the metallization layer. The method further includes forming a pair of adjacent parallel mandrels on the hardmask layer with sidewall spacers on opposite sides of each mandrel. The method further includes forming a planarization layer on the exposed portions of the hardmask layer, mandrels, and sidewall spacers, and forming an opening in the planarization layer aligned between the adjacent parallel mandrels. The method further includes forming a spacer layer in the opening, and removing portions of the spacer layer to form a pair of spacer plugs between sections of the sidewall spacers.

    HARDMASK FACETING FOR ENHANCING METAL FILL IN TRENCHES
    4.
    发明申请
    HARDMASK FACETING FOR ENHANCING METAL FILL IN TRENCHES 审中-公开
    用于增强金属填充物的HARDMASK面漆

    公开(公告)号：US20150221547A1

    公开(公告)日：2015-08-06

    申请号：US14172263

    申请日：2014-02-04

    申请人： STMICROELECTRONIC, INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： John C. Arnold ,  Shyng-Tsong Chen ,  Yann Mignot ,  Muthumanickam Sankarapandian ,  Oscar van der Straten ,  Yunpeng Yin

    IPC分类号： H01L21/768 ,  H01L21/311

    CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/76811

    摘要： A stack of an interlevel dielectric (ILD) layer, a dielectric cap layer, and a metallic hard mask layer is formed on a substrate. The metallic hard mask layer can be patterned with a first pattern. A photoresist layer is formed over the metallic hard mask layer and is patterned with a second pattern. A combination of the first pattern and the second pattern is transferred into the ILD layer to form a dual damascene trench, which includes an undercut underneath the patterned dielectric cap layer. The metallic hard mask layer is removed and the dielectric cap layer is anisotropically etched to form faceted edges and removal of overhanging portions. A metallic material can be deposited into the dual damascene trench without formation of voids during a metal fill process.

    摘要翻译： 在衬底上形成层间电介质（ILD）层，电介质覆盖层和金属硬掩模层的堆叠。 金属硬掩模层可以用第一图案图案化。 在金属硬掩模层上形成光致抗蚀剂层，并以第二图案形成图案。 将第一图案和第二图案的组合转移到ILD层中以形成双镶嵌沟槽，其包括在图案化电介质盖层下方的底切。 去除金属硬掩模层并且电介质盖层被各向异性地蚀刻以形成刻面边缘和去除突出部分。 金属材料可以在金属填充过程中沉积到双镶嵌槽中而不形成空隙。

    DUAL HARD MASK LITHOGRAPHY PROCESS
    5.
    发明申请
    DUAL HARD MASK LITHOGRAPHY PROCESS 有权
    双硬掩模平版印刷工艺

    公开(公告)号：US20140110846A1

    公开(公告)日：2014-04-24

    申请号：US14140060

    申请日：2013-12-24

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

    IPC分类号： H01L23/522

    CPC分类号： H01L23/5226 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00

    摘要： A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.

    摘要翻译： 在互连级介质层上的第一金属硬掩模层用线图案图案化。 在第一金属硬掩模层上方施加至少一个介电材料层，第二金属硬掩模层，第一有机平坦化层（OPL）和第一光致抗蚀剂。 第一通孔图案从第一光致抗蚀剂层转移到第二金属硬掩模层中。 第二OPL和第二光致抗蚀剂被施加和图案化，第二通孔图案被转移到第二金属硬掩模层中。 第一和第二通孔图案的第一复合图案被转移到至少一个介电材料层中。 将第一复合图案与第一金属硬掩模层中的开口的面积限制的第二复合图案被转移到互连级介质层中。

    ALTERNATING HARDMASKS FOR TIGHT-PITCH LINE FORMATION
    8.
    发明申请
    ALTERNATING HARDMASKS FOR TIGHT-PITCH LINE FORMATION 审中-公开

    公开(公告)号：US20180269060A1

    公开(公告)日：2018-09-20

    申请号：US15463659

    申请日：2017-03-20

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： John C. Arnold ,  Anuja E. DeSilva ,  Nelson M. Felix ,  Chi-Chun Liu ,  Yann A.M. Mignot ,  Stuart A. Sieg

    IPC分类号： H01L21/033

    摘要： Methods of forming fins include forming mask fins on a protection layer over a seed layer. Seed layer fins are etched out of the seed layer. Self-assembled fins are formed by directed self-assembly on the seed layer fins. A three-color hardmask fin pattern that has hardmask fins of three mutually selectively etchable compositions is formed using the self-assembled fins as a mask. A region on the three-color hardmask fin pattern is masked, leaving one or more fins of a first color exposed. All exposed fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.

    SELECTIVE PATTERNING OF VIAS WITH HARDMASKS
    9.
    发明申请
    SELECTIVE PATTERNING OF VIAS WITH HARDMASKS 有权

    公开(公告)号：US20220165612A1

    公开(公告)日：2022-05-26

    申请号：US17666767

    申请日：2022-02-08

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： John C. Arnold ,  Ashim Dutta ,  Dominik Metzler ,  Timothy M. Philip ,  Sagarika Mukesh

    IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L21/033

    摘要： Methods and structures for forming vias are provided. The method includes forming a structure that includes an odd line hardmask and an even line hardmask. The odd line hardmask and the even line hardmask include different hardmask materials that have different etch selectivity with respect to each other. The method includes patterning vias separately into the odd line hardmask and the even line hardmask based on the different etch selectivity of the different hardmask materials. The method also includes forming via plugs at the vias. The method includes cutting even line cuts and odd line cuts into the structure. The even line cuts and the odd line cuts are self-aligned with the vias. The vias are formed at line ends of the structure.

    Selective patterning of vias with hardmasks
    10.
    发明授权
    Selective patterning of vias with hardmasks 有权

    公开(公告)号：US11276607B2

    公开(公告)日：2022-03-15

    申请号：US16570059

    申请日：2019-09-13

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： John C. Arnold ,  Ashim Dutta ,  Dominik Metzler ,  Timothy M. Philip ,  Sagarika Mukesh

    IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L21/033

    摘要： Methods and structures for forming vias are provided. The method includes forming a structure that includes an odd line hardmask and an even line hardmask. The odd line hardmask and the even line hardmask include different hardmask materials that have different etch selectivity with respect to each other. The method includes patterning vias separately into the odd line hardmask and the even line hardmask based on the different etch selectivity of the different hardmask materials. The method also includes forming via plugs at the vias. The method includes cutting even line cuts and odd line cuts into the structure. The even line cuts and the odd line cuts are self-aligned with the vias. The vias are formed at line ends of the structure.