公开(公告)号：US09805790B2

公开(公告)日：2017-10-31

申请号：US15025229

申请日：2013-12-05

Applicant: Intel Corporation

Inventor： Nathaniel J. August ,  Pulkit Jain ,  Stefan Rusu ,  Fatih Hamzaoglu ,  Rangharajan Venkatesan ,  Muhammad Khellah ,  Charles Augustine ,  Carlos Tokunaga ,  James W. Tschanz ,  Yih Wang

IPC: G11C13/00 ,  G11C14/00 ,  G11C11/16

CPC classification number: G11C13/0061 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  G11C13/0011 ,  G11C13/0014 ,  G11C14/0081 ,  G11C14/009

Abstract: Described is an apparatus including memory cell with retention using resistive memory. The apparatus comprises: memory element including a first inverting device cross-coupled to a second inverting device; a restore circuit having at least one resistive memory element, the restore circuit coupled to an output of the first inverting device; a third inverting device coupled to the output of the first inverting device; a fourth inverting device coupled to an output of the third inverting device; and a save circuit having at least one resistive memory element, the save circuit coupled to an output of the third inverting device.