SUBSTRATE WITH THERMAL INSULATION

    公开(公告)号:US20210242107A1

    公开(公告)日:2021-08-05

    申请号:US16781563

    申请日:2020-02-04

    申请人: Intel Corporation

    摘要: Embodiments herein relate to systems, apparatuses, or processes directed to a substrate that includes a first region to be coupled with a die, and a second region separate and distinct from the first region that has a lower thermal conductivity than the first region, where the second region is to thermally insulate the first region when the die is coupled to the first region. The thermal insulation of the second region may be used during a TCB process to increase the quality of each of the interconnects of the die by promoting a higher temperature at the connection points to facilitate full melting of solder.

    PREDICTIVE CAPABILITY FOR ELECTROPLATING SHIELD DESIGN

    公开(公告)号:US20170140076A1

    公开(公告)日:2017-05-18

    申请号:US14942749

    申请日:2015-11-16

    申请人: Intel Corporation

    IPC分类号: G06F17/50 G06F17/10

    CPC分类号: C25D17/008 C25D7/005

    摘要: A method including running a simulated plating process on a substrate using a base shield, the base shield including a plurality of openings therethrough defining an array including two coordinates; after running the simulated plating process, determining if a predetermined criterion for the simulated plating process is satisfied; and if the predetermined criterion is not satisfied, adjusting one or more of the plurality of openings. A machine readable medium including program instructions that when executed by a controller cause the controller to perform a method including running a simulated plating process on a substrate using a base shield, the base shield including a plurality of openings therethrough defining an array including two coordinates; after running the simulated plating process, determining if a predetermined criterion for the simulated plating process is satisfied; and if the predetermined criterion is not satisfied, adjusting one or more of the plurality of openings.

    NO MOLD SHELF PACKAGE DESIGN AND PROCESS FLOW FOR ADVANCED PACKAGE ARCHITECTURES

    公开(公告)号:US20210104490A1

    公开(公告)日:2021-04-08

    申请号:US16596367

    申请日:2019-10-08

    申请人: Intel Corporation

    摘要: Embodiments include semiconductor packages and a method to form such semiconductor packages. A semiconductor package includes a plurality of dies on a substrate, and an encapsulation layer over the substrate. The encapsulation layer surrounds the dies. The semiconductor package also includes a plurality of dummy silicon regions on the substrate. The dummy silicon regions surround the dies and encapsulation layer. The plurality of dummy silicon regions are positioned on two or more edges of the substrate. The dummy silicon regions have a top surface substantially coplanar to a top surface of the dies. The dummy silicon regions include materials that include silicon, metals, or highly-thermal conductive materials. The materials have a thermal conductivity of approximately 120 W/mK or greater, or is equal to or greater than the thermal conductivity of silicon. An underfill layer surrounds the substrate and the dies, where the encapsulation layer surrounds portions of the underfill layer.