- 专利标题: PROTRUDING SN SUBSTRATE FEATURES FOR EPOXY FLOW CONTROL
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申请号: US18632047申请日: 2024-04-10
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公开(公告)号: US20240258183A1公开(公告)日: 2024-08-01
- 发明人: Edvin CETEGEN , Jacob VEHONSKY , Nicholas S. HAEHN , Thomas HEATON , Steve S. CHO , Rahul JAIN , Tarek IBRAHIM , Antariksh Rao Pratap SINGH , Nicholas NEAL , Sergio CHAN ARGUEDAS , Vipul MEHTA
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L23/16
- IPC分类号: H01L23/16 ; H01L23/00 ; H01L23/31 ; H01L23/498 ; H01L25/065
摘要:
Embodiments disclosed herein include electronic packages with underfill flow control features. In an embodiment, an electronic package comprises a package substrate and a plurality of interconnects on the package substrate. In an embodiment, a die is coupled to the package substrate by the plurality of interconnects and a flow control feature is adjacent on the package substrate. In an embodiment, the flow control feature is electrically isolated from circuitry of the electronic package. In an embodiment, the electronic package further comprises an underfill surrounding the plurality of interconnects and in contact with the flow control feature.
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