公开(公告)号：US20220199458A1

公开(公告)日：2022-06-23

申请号：US17127860

申请日：2020-12-18

申请人： Intel Corporation

发明人： Michael Makowski ,  Sudipto Naskar ,  Ryan Pearce ,  Nita Chandrasekhar ,  Minyoung Lee ,  Christopher Parker

IPC分类号： H01L21/762 ,  H01L21/02 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78

摘要： Transistors structures comprising a semiconductor features and dielectric material comprising silicon and oxygen in gaps or spaces between the features. The dielectric material may fill the gaps from bottom-up with an atomic layer deposition (ALD) process that includes a silicon deposition phase, and an oxidation phase augmented by N2:NH3 plasma activated nitrogen species. Being plasma activated, the nitrogen species have short mean free paths, and therefore preferentially passivate surfaces with low aspect ratios. This aspect-ratio dependent passivation may increase an energy barrier to surface reactions with a silicon precursor, resulting in a concomitant differential in deposition rate. With N2:NH3 plasma passivation, deposited dielectric material may have a nitrogen concentration that varies by at least order of magnitude as a function of the aspect ratio of the filled gaps.

公开(公告)号：US12087614B2

公开(公告)日：2024-09-10

申请号：US17127860

申请日：2020-12-18

申请人： Intel Corporation

发明人： Michael Makowski ,  Sudipto Naskar ,  Ryan Pearce ,  Nita Chandrasekhar ,  Minyoung Lee ,  Christopher Parker

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L21/762 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/76224 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7851

摘要： Transistors structures comprising a semiconductor features and dielectric material comprising silicon and oxygen in gaps or spaces between the features. The dielectric material may fill the gaps from bottom-up with an atomic layer deposition (ALD) process that includes a silicon deposition phase, and an oxidation phase augmented by N2:NH3 plasma activated nitrogen species. Being plasma activated, the nitrogen species have short mean free paths, and therefore preferentially passivate surfaces with low aspect ratios. This aspect-ratio dependent passivation may increase an energy barrier to surface reactions with a silicon precursor, resulting in a concomitant differential in deposition rate. With N2:NH3 plasma passivation, deposited dielectric material may have a nitrogen concentration that varies by at least order of magnitude as a function of the aspect ratio of the filled gaps.

公开(公告)号：US20230395506A1

公开(公告)日：2023-12-07

申请号：US17833708

申请日：2022-06-06

申请人： Intel Corporation

发明人： Miriam Reshotko ,  Elijah Karpov ,  Mark Anders ,  Gauri Auluck ,  Shakuntala Sundararajan ,  Michael Makowski ,  Caleb Barrett

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L23/5226 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53266

摘要： Adjacent interconnect features are in staggered, vertically spaced positions, which accordingly reduces their capacitive coupling within a level of interconnect metallization. Adjacent interconnect features may comprise a plurality of first interconnect lines with spaces therebetween. A dielectric material is over the first interconnect lines and within the spaces between the first interconnect lines. Resultant topography in the dielectric material defines a plurality of trenches between the first interconnect lines. The adjacent interconnect features further comprise a plurality of second interconnect lines interdigitated with the first interconnect lines that occupy at least a portion of the trenches between individual ones of the first interconnect lines.