Adjacent interconnect features are in staggered, vertically spaced positions, which accordingly reduces their capacitive coupling within a level of interconnect metallization. Adjacent interconnect features may comprise a plurality of first interconnect lines with spaces therebetween. A dielectric material is over the first interconnect lines and within the spaces between the first interconnect lines. Resultant topography in the dielectric material defines a plurality of trenches between the first interconnect lines. The adjacent interconnect features further comprise a plurality of second interconnect lines interdigitated with the first interconnect lines that occupy at least a portion of the trenches between individual ones of the first interconnect lines.