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公开(公告)号:US11782755B2
公开(公告)日:2023-10-10
申请号:US16729026
申请日:2019-12-27
Applicant: Intel Corporation
Inventor: Renji Thomas , Chris Binns , Pietro Mercati , Jianfang Zhu , Ashraf H. Wadaa , Michael Kishinevsky , Ahmed Shams
CPC classification number: G06F9/4881 , G06F9/3836 , G06F11/3433 , G06F30/20
Abstract: An apparatus comprising: a model to generate adjusted tuning parameters of a thread scheduling policy based on a tradeoff indication value of a target system; and a workload monitor to: execute a workload based on the thread scheduling policy; obtain a performance score and a power score from the target system based on execution of the workload, the performance score and the power score corresponding to a tradeoff indication value; compare the tradeoff indication value to a criterion; and based on the comparison, initiate the model to re-adjust the adjusted tuning parameters.
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公开(公告)号:US09559698B2
公开(公告)日:2017-01-31
申请号:US14906025
申请日:2013-09-30
Applicant: Intel Corporation
Inventor: Dmitri E. Nikonov , Sasikanth Manipatruni , Michael Kishinevsky , Ian A. Young
CPC classification number: H03K19/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/222 , H01L29/66984 , H01L43/02 , H01L43/08 , H03K19/18
Abstract: An embodiment includes a C-element logic gate implemented as a spin logic device that provides a compact and low-power implementation of asynchronous logic by implementing a C-element with spintronic technology. An embodiment includes a first nanopillar including a first contact and a first fixed magnetic layer; a second nanopillar including a second contact and a second fixed magnetic layer; and a third nanopillar including a third contact, a tunnel barrier, and a third fixed magnetic layer; wherein (a) the first, second, and third nanopillars are all formed over a free magnetic layer, and (b) the third fixed magnetic layer, the tunnel barrier, and the free magnetic layer form a magnetic tunnel junction (MTJ). Other embodiments are described herein.
Abstract translation: 实施例包括被实现为自旋逻辑器件的C元件逻辑门,其通过使用自旋电子技术实现C元件来提供异步逻辑的紧凑和低功率实施。 一个实施例包括第一纳米柱,其包括第一接触和第一固定磁性层; 包括第二接触和第二固定磁性层的第二纳米柱; 以及包括第三接触件,隧道势垒和第三固定磁性层的第三纳米柱; 其中(a)第一,第二和第三纳米锥都形成在自由磁性层上,并且(b)第三固定磁性层,隧道势垒和自由磁性层形成磁性隧道结(MTJ)。 本文描述了其它实施例。
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公开(公告)号:US20180137668A1
公开(公告)日:2018-05-17
申请号:US15811459
申请日:2017-11-13
Applicant: Intel Corporation
Inventor: Pietro Mercati , Raid Ayoub , Michael Kishinevsky , Eric C. Samson , Marc Beuchat , Francesco Paterna
CPC classification number: G06T15/005 , G06F1/206 , G06F1/324 , G06F1/3287 , G06F1/3296 , G06F8/41 , G06F8/65 , G06T15/80 , Y02D10/126 , Y02D10/16 , Y02D10/171 , Y02D10/172 , Y02D10/42
Abstract: Methods and apparatus relating to techniques for dynamically selecting optimum graphics logic frequency and/or graphics logic power gating configuration are described. In an embodiment, multi-rate control logic determines processor active slice count and processor frequency based at least in part on a target Frames Per Second (FPS) value and a current FPS value. The multi-rate control logic includes slow rate control logic to determine slice gating and operating frequency and a fast rate control logic to determine operating frequency of the processor. Other embodiments are also disclosed and claimed.
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