Spintronic logic element
    2.
    发明授权
    Spintronic logic element 有权
    自旋电子逻辑元件

    公开(公告)号:US09559698B2

    公开(公告)日:2017-01-31

    申请号:US14906025

    申请日:2013-09-30

    Abstract: An embodiment includes a C-element logic gate implemented as a spin logic device that provides a compact and low-power implementation of asynchronous logic by implementing a C-element with spintronic technology. An embodiment includes a first nanopillar including a first contact and a first fixed magnetic layer; a second nanopillar including a second contact and a second fixed magnetic layer; and a third nanopillar including a third contact, a tunnel barrier, and a third fixed magnetic layer; wherein (a) the first, second, and third nanopillars are all formed over a free magnetic layer, and (b) the third fixed magnetic layer, the tunnel barrier, and the free magnetic layer form a magnetic tunnel junction (MTJ). Other embodiments are described herein.

    Abstract translation: 实施例包括被实现为自旋逻辑器件的C元件逻辑门,其通过使用自旋电子技术实现C元件来提供异步逻辑的紧凑和低功率实施。 一个实施例包括第一纳米柱,其包括第一接触和第一固定磁性层; 包括第二接触和第二固定磁性层的第二纳米柱; 以及包括第三接触件,隧道势垒和第三固定磁性层的第三纳米柱; 其中(a)第一,第二和第三纳米锥都形成在自由磁性层上,并且(b)第三固定磁性层,隧道势垒和自由磁性层形成磁性隧道结(MTJ)。 本文描述了其它实施例。

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