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公开(公告)号：US20160123943A1
公开(公告)日：2016-05-05
申请号：US14895915
申请日：2013-06-05
发明人： Dongmei LI , Hao ZHANG , Shengfa LIANG , Qing LUO , Xiaojing LI , Changqing XIE , Ming LIU
IPC分类号： G01N33/00
CPC分类号： G01N33/0034 , G06N3/084
摘要： A gas recognition method based on a compressive sensing theory. The method comprises: collecting compressed data in an under-sampling manner; performing a reconstruction on the collected compressed data to obtain reconstructed data; training a back-propagation neural network by using the reconstructed data and storing the trained back-propagation neural network; inputting data under test into the trained back-propagation neural network, such that the trained back-propagation neural network performs a recognition on the data under test to realize qualitative recognition of gas. The method solves the problem in transmission and storage of large amount of data and the problem of imprecise recognition in current gas detection, and achieves the object that a precise qualitative recognition is achieved by using a reduced amount of data.
摘要翻译： 一种基于压缩感知理论的气体识别方法。 该方法包括：以低采样方式收集压缩数据; 对所收集的压缩数据进行重构以获得重构数据; 通过使用重构数据训练反向传播神经网络，并存储经过训练的反向传播神经网络; 将被测数据输入到经过训练的反向传播神经网络中，使得经过训练的反向传播神经网络对被测数据进行识别，以实现气体的定性识别。 该方法解决了大量数据的传输和存储问题，以及当前气体检测中不精确识别的问题，达到了通过减少数据量实现精确定性识别的对象。
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公开(公告)号：US20160079969A1
公开(公告)日：2016-03-17
申请号：US14888335
申请日：2013-07-15
发明人： Dongmei LI , Qing LUO , Shengfa LIANG , Hongzhang YANG , Xiaojing LI , Hao ZHANG , Changqing XIE , Ming LIU
IPC分类号： H03K4/08
摘要： A sampler adapted to a one-dimension slow-varying signal, including: a signal preprocessing unit configured to preprocess an input signal; a slope-controllable sawtooth wave signal generating unit configured to generate a slope-controllable sawtooth wave signal and perform zero-resetting; a signal comparing unit configured to compare the preprocessed input signal from the signal preprocessing unit with the sawtooth wave signal and to output a pulse signal to the generating unit and a signal outputting unit when the preprocessed input signal is equal to the sawtooth wave signal; a counting unit configured to count a number of clock signals while the sawtooth wave signal generating unit is generating the sawtooth wave signal and to transmit the counted number to the signal outputting unit; the signal outputting unit configured to, upon receipt of the pulse signal output from the signal comparing unit, output the number counted by the counting unit at the moment.
摘要翻译： 一种适于一维慢变信号的采样器，包括：信号预处理单元，被配置为预处理输入信号; 坡度可控锯齿波信号产生单元，其被配置为产生斜率可控锯齿波信号并执行零重置; 信号比较单元，被配置为将来自信号预处理单元的预处理输入信号与锯齿波信号进行比较，并且当预处理输入信号等于锯齿波信号时，向生成单元输出脉冲信号和信号输出单元; 计数单元，被配置为在锯齿波信号生成单元产生锯齿波信号的同时对多个时钟信号进行计数，并将计数的数量发送到信号输出单元; 所述信号输出单元被配置为在接收到从所述信号比较单元输出的脉冲信号时，输出由所述计数单元计数的数量。
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公开(公告)号：US20220172035A1
公开(公告)日：2022-06-02
申请号：US17310203
申请日：2019-01-28
发明人： Hangbing LV , Xiaoxin XU , Qing LUO , Ming LIU
摘要： Disclosed is a neural network operation device, including: an operation array including operation units, wherein each operation unit includes: a source terminal, a drain terminal, a gate electrode, a threshold voltage adjustment layer under the gate electrode, and a channel region extending between a source region and a drain region, the threshold voltage adjustment layer is located on the channel region. The gate electrodes of each column of operation units of the operation array are connected together, and each column is used to adjust a weight value according to a threshold voltage adjusted by the threshold voltage adjustment layer. The threshold voltage adjustment layer is a ferroelectric layer.
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公开(公告)号：US20220115052A1
公开(公告)日：2022-04-14
申请号：US17426053
申请日：2019-01-28
发明人： Hangbing LV , Qing LUO , Xiaoxin XU , Tiancheng GONG , Ming LIU
摘要： A writing method and erasing method of a fusion memory are provided, and the fusion memory includes a plurality of memory cells, and each memory cell of the plurality of memory cells includes a bulk substrate; a source and a drain on the bulk substrate, a channel region extending between the source and the drain, and a ferroelectric layer and a gate stacked on the channel region; and the writing method includes: applying a first voltage between the gate of at least one memory cell and the bulk of at least one memory cell, in which the first voltage is less than a reversal voltage at which the ferroelectric layer is polarization reversed, and each of the source and the drain is grounded or in a floating state.
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公开(公告)号：US20200058704A1
公开(公告)日：2020-02-20
申请号：US16486614
申请日：2017-02-22
发明人： Hangbing LV , Qing LUO , Xiaoxin XU , Shibing LONG , Qi LIU , Ming LIU
摘要： A transition metal oxide based selector, a method for preparing the same and resistive random access memory are provided. The method comprises: S1, forming a tungsten plug on a transistor; S2, using the tungsten plug to function as a lower electrode, and preparing a transition metal layer on the tungsten plug; S3, oxidizing the transition metal layer to convert the transition metal layer into a transition metal oxide layer; and S4, depositing an upper electrode on the transition metal oxide, patterning the upper electrode and the transition metal oxide. The selector of the present disclosure may provide a high current density and has a good uniformity. The formed 1S1R structure may effectively eliminate crosstalk phenomenon in a resistive random access memory array, and effectively increase the storage density without increasing the storage unit area, thereby increasing device integration. In addition, the selector for the resistive random access memory of the present invention has advantages of a simple structure, easy for integration, a low cost, a good uniformity, and compatibility with a CMOS process.
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6.发明申请METHOD FOR COLLECTING SIGNAL WITH SAMPLING FREQUENCY LOWER THAN NYQUIST FREQUENCY 有权采集频率低于NYQUIS频率的信号采集方法公开(公告)号：US20150326246A1
公开(公告)日：2015-11-12
申请号：US14805868
申请日：2015-07-22
发明人： Dongmei LI , Xiaojing LI , Shengfa LIANG , Hao ZHANG , Qing LUO , Changqing XIE , Ming LIU
IPC分类号： H03M7/30
CPC分类号： H03M7/3062 , H03M7/30 , H04L27/2642
摘要： A method for collecting a signal with a frequency lower than a Nyquist frequency includes, by a data transmitting end, selecting a suitable transformation base matrix for an input signal, deriving a sparse representation of the signal using the transformation base matrix to determine a sparsity of the signal, calculating a number M of compressive sampling operations according to the sparsity, sampling the signal with fNYQ/M using M channels, and integrating sampling values of each channel to obtain M measurement values. A reconstruction end reconstructs an original signal by solving optimization problems. Based on theory, compressive sampling can be performed on a sparse signal or a signal represented in a sparse manner with a frequency much lower than the Nyquist frequency, overcoming restrictions of the typical Nyquist sampling theorem. The method can be implemented simply and decrease pressure on data collection, storage, transmission and processing.
摘要翻译： 收集频率低于奈奎斯特频率的信号的方法包括：通过数据发送端，为输入信号选择合适的变换基矩阵，使用变换基矩阵导出信号的稀疏表示，以确定稀疏度 信号，根据稀疏度计算M个压缩采样操作，使用M个通道对fNYQ / M采样信号，并对每个通道的采样值进行积分以获得M个测量值。 重建结束通过解决优化问题重建原始信号。 基于理论，可以对稀疏信号或以稀疏方式表示的信号执行压缩采样，频率远低于奈奎斯特频率，克服典型奈奎斯特采样定理的限制。 该方法可以简单实现，减少数据收集，存储，传输和处理的压力。
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公开(公告)号：US20220122997A1
公开(公告)日：2022-04-21
申请号：US17310282
申请日：2019-01-28
发明人： Hangbing LV , Qing LUO , Xiaoxin XU , Tiancheng GONG , Ming LIU
IPC分类号： H01L27/1159 , H01L27/11597 , H01L25/065
摘要： Disclosed is a memory, including a plurality of memory units, wherein each memory unit includes: a bulk substrate; a source electrode, a drain electrode and a channel region extending between a source region and a drain region that are located on the bulk substrate; a deep-level defect dielectric layer on the channel region; and a gate electrode on the deep-level defect dielectric layer. The memory of the present disclosure allows the memory unit to operate in the charge trapping mode and the polarization inversion mode. Therefore, the memory has functions of both DRAM and NAND, and combines the advantages of the two.
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公开(公告)号：US20230267990A1
公开(公告)日：2023-08-24
申请号：US18005101
申请日：2020-08-24
发明人： Qing LUO , Bing CHEN , Hangbing LV , Ming LIU , Cheng LU
IPC分类号： G11C11/4096 , G11C11/408 , G11C11/4094 , H03K19/017
CPC分类号： G11C11/4096 , G11C11/4085 , G11C11/4094 , H03K19/01742
摘要： Provided are a symmetric memory cell and a BNN circuit. The symmetric memory cell includes a first complementary structure and a second complementary structure, the second complementary structure being symmetrically connected to the first complementary structure in a first direction, wherein the first complementary structure includes a first control transistor configured to be connected to the second complementary structure, the second complementary structure includes a second control transistor, a drain electrode of the second control transistor and a drain electrode of the first control transistor being symmetrically arranged in the first direction and connected to a bit line, and the symmetric memory cell is configured to store a weight value 1 or 0.
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公开(公告)号：US20210013404A1
公开(公告)日：2021-01-14
申请号：US16767091
申请日：2018-03-28
发明人： Qing LUO , Hangbing LV , Ming LIU
IPC分类号： H01L45/00
摘要： The present disclosure provides a self-rectifying resistive memory, including: a lower electrode; a resistive material layer formed on the lower electrode and used as a storage medium; a barrier layer formed on the resistive material layer and using a semiconductor material or an insulating material; and an upper electrode formed on the barrier layer to achieve Schottky contact with the material of the barrier layer; wherein, the Schottky contact between the upper electrode and the material of the barrier layer is used to realize self-rectification of the self-rectifying resistive memory. Thus, no additional gate transistor or diode is required as the gate unit. In addition, because the device has self-rectifying characteristics, it is capable of suppressing read crosstalk in the cross-array.
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10.发明申请公开(公告)号：US20190115529A1
公开(公告)日：2019-04-18
申请号：US16085400
申请日：2016-03-18
发明人： Ming LIU , Qing LUO , Xiaoxin XU , Hangbing LV , Shibing LONG , Qi LIU
摘要： A selector for a bipolar resistive random access memory and a method for fabricating the selector are provided. The method includes: providing a substrate; forming a lower electrode on the substrate, where the lower electrode is made of a metal, and the metal is made up of metal atoms which diffuse under an annealing condition of below 400° C.; forming a first metal oxide layer on the lower electrode; performing an annealing process on the first metal oxide layer to make the metal atoms in the lower electrode diffuse into the first metal oxide layer to form a first metal oxide layer doped with metal atoms; forming a second metal oxide layer on the first metal oxide layer doped with metal atoms; forming an upper electrode layer on the second metal oxide layer; and patterning the upper electrode layer to form an upper electrode.
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