公开(公告)号：US11576259B2

公开(公告)日：2023-02-07

申请号：US16550151

申请日：2019-08-23

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Andre Brockmeier ,  Tobias Franz Wolfgang Hoechbauer ,  Gerhard Metzger-Brueckl ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez

IPC: H01L23/12 ,  H05K1/03 ,  H01L21/683 ,  H01L29/16

Abstract: A carrier configured to be attached to a semiconductor substrate via a first surface comprises a continuous carbon structure defining a first surface of the carrier, and a reinforcing material constituting at least 2 vol-% of the carrier.

公开(公告)号：US10560771B2

公开(公告)日：2020-02-11

申请号：US16052261

申请日：2018-08-01

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Gerhard Metzger-Brueckl ,  Johann Strasser ,  Arnaud Walther ,  Andreas Wiesbauer

IPC: H04R1/06 ,  H04R1/08 ,  B81B3/00 ,  B81C1/00 ,  H04R23/00 ,  H04R31/00

Abstract: In accordance with an embodiment, microelectromechanical microphone includes a holder and a sound detection unit carried on the holder. The sound detection unit includes a planar first membrane, a planar second membrane arranged at a distance from the first membrane, a low-pressure chamber formed between the first membrane and the second membrane, a reduced gas pressure relative to normal pressure being present in the low-pressure chamber, a reference electrode arranged at least in sections in the low-pressure chamber, where the first and second membranes are displaceable relative to the reference electrode by sound waves to be detected, the reference electrode includes a planar base section and a stiffening structure provided on the base section, and the stiffening structure is provided on a side of the base section that faces the first membrane or/and on a side of the base section that faces the second membrane.

公开(公告)号：US10913656B2

公开(公告)日：2021-02-09

申请号：US16162026

申请日：2018-10-16

Applicant: Infineon Technologies AG

Inventor： Gerhard Metzger-Brueckl ,  Alfons Dehe ,  Uwe Hoeckele ,  Johann Strasser ,  Arnaud Walther

IPC: B81B7/02 ,  B81C1/00

Abstract: A method for sealing an access opening to a cavity comprises the following steps: providing a layer arrangement having a first layer structure and a cavity arranged adjacent to the first layer structure, wherein the first layer structure has an access opening to the cavity, performing a CVD layer deposition for forming a first covering layer having a layer thickness on the first layer structure having the access opening, and performing an HDP layer deposition with a first and second substep for forming a second covering layer on the first covering layer, wherein the first substep comprises depositing a liner material layer on the first covering layer, wherein the second substep comprises partly backsputtering the liner material layer and furthermore the first covering layer in the region of the access opening, and wherein the first and second substeps are carried out alternately and repeatedly a number of times.

公开(公告)号：US10784145B2

公开(公告)日：2020-09-22

申请号：US16264071

申请日：2019-01-31

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Wolfgang Lehnert ,  Gerhard Metzger-Brueckl ,  Guenther Ruhl ,  Roland Rupp

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/304 ,  H01L21/20 ,  H01L21/78

Abstract: A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.

公开(公告)号：US10669151B2

公开(公告)日：2020-06-02

申请号：US16118055

申请日：2018-08-30

Applicant: Infineon Technologies AG

Inventor： Johann Strasser ,  Alfons Dehe ,  Gerhard Metzger-Brueckl ,  Juergen Wagner ,  Arnaud Walther

IPC: B81B7/02 ,  B81C1/00 ,  H04R19/04 ,  H04R31/00 ,  H04R19/00 ,  B81B3/00

Abstract: A production method for a double-membrane MEMS component includes: providing a layer arrangement on a carrier substrate, wherein the layer arrangement comprises a first membrane structure, a sacrificial material layer adjoining the first membrane structure, and a counterelectrode structure in the sacrificial material layer and at a distance from the first membrane structure, wherein at least one through opening is formed in the sacrificial material layer as far as the first membrane structure; forming a filling material structure in the at least one through opening by applying a first filling material layer on the wall region of the at least one through opening; applying a second membrane structure on the layer arrangement with the sacrificial material; and removing the sacrificial material from an intermediate region to expose the filling material structure in the intermediate region.

公开(公告)号：US20190244853A1

公开(公告)日：2019-08-08

申请号：US16264071

申请日：2019-01-31

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Wolfgang Lehnert ,  Gerhard Metzger-Brueckl ,  Guenther Ruhl ,  Roland Rupp

IPC: H01L21/762 ,  H01L21/304 ,  H01L21/02 ,  H01L21/20

Abstract: A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.

公开(公告)号：US11557505B2

公开(公告)日：2023-01-17

申请号：US17028503

申请日：2020-09-22

Applicant: Infineon Technologies AG

Inventor： Wolfgang Lehnert ,  Rudolf Berger ,  Rudolf Lehner ,  Gerhard Metzger-Brueckl ,  Guenther Ruhl

IPC: H01L21/762 ,  H01L21/78 ,  H01L21/683 ,  H01L29/16 ,  H01L29/20

Abstract: A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.

公开(公告)号：US10651072B2

公开(公告)日：2020-05-12

申请号：US16264265

申请日：2019-01-31

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Wolfgang Lehnert ,  Gerhard Metzger-Brueckl ,  Guenther Ruhl ,  Roland Rupp

IPC: H01L21/683 ,  H01L21/02 ,  H01L21/78 ,  H01L29/66 ,  H01L29/78

Abstract: This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.

公开(公告)号：US20190244850A1

公开(公告)日：2019-08-08

申请号：US16264265

申请日：2019-01-31

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Wolfgang Lehnert ,  Gerhard Metzger-Brueckl ,  Guenther Ruhl ,  Roland Rupp

IPC: H01L21/683 ,  H01L21/02

CPC classification number: H01L21/6835 ,  H01L21/02002 ,  H01L29/66712 ,  H01L29/7813 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68381

Abstract: This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.

公开(公告)号：US20190112182A1

公开(公告)日：2019-04-18

申请号：US16162026

申请日：2018-10-16

Applicant: Infineon Technologies AG

Inventor： Gerhard Metzger-Brueckl ,  Alfons Dehe ,  Uwe Hoeckele ,  Johann Strasser ,  Arnaud Walther

IPC: B81B7/02 ,  B81C1/00

Abstract: A method for sealing an access opening to a cavity comprises the following steps: providing a layer arrangement having a first layer structure and a cavity arranged adjacent to the first layer structure, wherein the first layer structure has an access opening to the cavity, performing a CVD layer deposition for forming a first covering layer having a layer thickness on the first layer structure having the access opening, and performing an HDP layer deposition with a first and second substep for forming a second covering layer on the first covering layer, wherein the first substep comprises depositing a liner material layer on the first covering layer, wherein the second substep comprises partly backsputtering the liner material layer and furthermore the first covering layer in the region of the access opening, and wherein the first and second substeps are carried out alternately and repeatedly a number of times.