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公开(公告)号：US20240310461A1
公开(公告)日：2024-09-19
申请号：US18591878
申请日：2024-02-29
发明人： Bernhard ENDRES , Andreas STRAßER , Juergen ZIMMER
CPC分类号： G01R33/093 , G01R33/098 , H10N50/10
摘要： A magnetoresistive sensor includes at least one magnetoresistive element having a layer stack. The layer stack has at least one free layer that has a magnetization that is changeable in the layer plane and that varies depending on the field strength of an external magnetic field acting parallel to the layer plane. The magnetoresistive sensor furthermore has a shielding element that has a vortex magnetization with a closed flux in the layer plane, wherein the shielding element is configured, in the presence of the external magnetic field, to generate a linear magnetic stray field that is directed counter to the external magnetic field.
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公开(公告)号：US20240329166A1
公开(公告)日：2024-10-03
申请号：US18194749
申请日：2023-04-03
发明人： Bernhard ENDRES , Jürgen FÖRSTER , Andreas STRAßER
CPC分类号： G01R33/093 , G01R33/091 , H10N50/10
摘要： A magnetoresistive sensor includes a sensing element and a stress inducing layer. The sensing element has a layer stack that includes a reference layer having a fixed reference magnetization aligned with a magnetization axis; a magnetic free layer having a magnetically free magnetization, wherein the magnetically free magnetization is variable in a presence of an external magnetic field; and a non-magnetic layer arranged between the reference layer and the magnetic free layer. The stress inducing layer is coupled to the layer stack and is configured to apply a force to the layer stack to induce a mechanical stress in the layer stack along a mechanical stress axis such that the magnetization axis is aligned parallel with the mechanical stress axis or perpendicular with the mechanical stress axis.
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3.发明公开公开(公告)号：US20240094314A1
公开(公告)日：2024-03-21
申请号：US17932508
申请日：2022-09-15
IPC分类号： G01R33/09
CPC分类号： G01R33/098
摘要： A tunnel magnetoresistive (TMR) sensing element may include a free layer. The free layer of the TMR sensing element may include a first cobalt iron boron (CoFeB) layer, an interlayer over the first CoFeB layer, a second CoFeB layer over the interlayer, and a nickel iron (NiFe) layer over the second CoFeB layer.
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公开(公告)号：US20210373094A1
公开(公告)日：2021-12-02
申请号：US17324446
申请日：2021-05-19
发明人： Bernhard ENDRES , Klemens PRUEGL
摘要： Exemplary embodiments are directed to magnetoresistive sensors and corresponding fabrication methods for magnetoresistive sensors. One example of a magnetoresistive sensor includes a layer stack, wherein the layer stack includes a reference layer having a fixed reference magnetization, wherein the fixed reference magnetization has a first magnetic orientation. The layer stack furthermore includes a magnetically free system of a plurality of layers, wherein the magnetically free system has a magnetically free magnetization, wherein the magnetically free magnetization is variable in the presence of an external magnetic field, and wherein the magnetically free magnetization has a second magnetic orientation in a ground state. The magnetically free system has two ferromagnetic layers and an interlayer, wherein the interlayer is arranged between the two ferromagnetic layers and includes magnesium oxide. The layer stack furthermore includes a barrier layer, which is arranged between the reference layer and the magnetically free system and includes magnesium oxide.
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公开(公告)号：US20240302459A1
公开(公告)日：2024-09-12
申请号：US18180600
申请日：2023-03-08
发明人： Bernhard ENDRES
CPC分类号： G01R33/098 , H01F1/0009 , H01F10/3254 , H01F10/3272
摘要： A tunnel magnetoresistance (TMR) sensing element includes a layer stack having a tantalum-nitride (TaN) layer; a reference layer system; a magnetic free layer having a magnetically free magnetization; and a tunnel barrier layer arranged between the reference layer system and the magnetic free layer. The reference layer system includes a pinned layer having a fixed pinned magnetization; a reference layer having a having a fixed reference magnetization; a coupling interlayer arranged between the pinned layer and the reference layer; and a natural antiferromagnetic (NAF) layer comprising iridium-manganese (IrMn), wherein the NAF layer is formed in direct contact with the TaN layer, wherein the NAF layer is configured to hold the fixed pinned magnetization in a first magnetic orientation and hold the fixed reference magnetization in a second magnetic orientation, and wherein the direct contact of the NAF layer with the TaN layer increases a blocking temperature of the NAF layer.
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公开(公告)号：US20240103102A1
公开(公告)日：2024-03-28
申请号：US17935743
申请日：2022-09-27
发明人： Bernhard ENDRES
CPC分类号： G01R33/098 , G01R33/0035
摘要： In some implementations, a magnetic sensor may apply an electrical signal across a tunnel barrier layer of a tunnel magnetoresistive (TMR) sensing element. The electrical signal may have a first signal level during a first time period and a second signal level during a second time period. The second signal level may be different from the first signal level. The magnetic sensor may generate an offset-corrected sensor signal based on a sensor signal that results from applying the electrical signal across the tunnel barrier layer of the TMR sensing element.
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公开(公告)号：US20230314534A1
公开(公告)日：2023-10-05
申请号：US18193091
申请日：2023-03-30
发明人： Klemens PRÜGL , Miriam SCHWAN , Bernhard ENDRES
CPC分类号： G01R33/093 , G11C11/161 , H10N50/85 , H10N50/10 , H10N50/01 , H01F10/3268
摘要： A device having a spin valve layer sequence, wherein the spin valve layer sequence includes a first magnetic layer having a variable direction of magnetization, a second magnetic layer having a fixed direction of magnetization, and a stabilization layer for stabilizing the fixed direction of magnetization of the second magnetic layer, wherein the stabilization layer includes a precious metal-free antiferromagnet.
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