- 专利标题: INDUCING MECHANICAL STRESS IN MAGNETORESISTIVE SENSING ELEMENT TO ALIGN MAGNETIZATION AXIS OF REFERENCE LAYER SYSTEM IN PREFERRED DIRECTION FOR IMPROVED SENSOR PERFORMANCE
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申请号: US18194749申请日: 2023-04-03
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公开(公告)号: US20240329166A1公开(公告)日: 2024-10-03
- 发明人: Bernhard ENDRES , Jürgen FÖRSTER , Andreas STRAßER
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 主分类号: G01R33/09
- IPC分类号: G01R33/09 ; H10N50/10
摘要:
A magnetoresistive sensor includes a sensing element and a stress inducing layer. The sensing element has a layer stack that includes a reference layer having a fixed reference magnetization aligned with a magnetization axis; a magnetic free layer having a magnetically free magnetization, wherein the magnetically free magnetization is variable in a presence of an external magnetic field; and a non-magnetic layer arranged between the reference layer and the magnetic free layer. The stress inducing layer is coupled to the layer stack and is configured to apply a force to the layer stack to induce a mechanical stress in the layer stack along a mechanical stress axis such that the magnetization axis is aligned parallel with the mechanical stress axis or perpendicular with the mechanical stress axis.
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