公开(公告)号：US20220406600A1

公开(公告)日：2022-12-22

申请号：US17837690

申请日：2022-06-10

申请人： Infineon Technologies AG

发明人： Moriz Jelinek ,  Thomas Waechtler ,  Bernd Bitnar ,  Daniel Schloegl ,  Hans-Joachim Schulze ,  Oana Julia Spulber ,  Benedikt Stoib ,  Christian Krueger

IPC分类号： H01L21/22 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/32 ,  H01L29/739 ,  H01L21/265 ,  H01L29/66

摘要： A semiconductor device includes: an n-doped drift region between first and second surfaces of a semiconductor body; a p-doped first region at the second surface; and an n-doped field stop region between the drift and first region. The field stop region includes first and second sub-regions with hydrogen related donors. A p-n junction separates the first region and first sub-region. A concentration of the hydrogen related donors, along a first vertical extent of the first sub-region, steadily increases from the pn-junction to a maximum value, and steadily decreases from the maximum value to a reference value at a first transition between the sub-regions. A second vertical extent of the second sub-region ends at a second transition to the drift region where the concentration of hydrogen related donors equals 10% of the reference value. A maximum concentration value in the second sub-region is at most 20% larger than the reference value.

公开(公告)号：US20240213343A1

公开(公告)日：2024-06-27

申请号：US18533872

申请日：2023-12-08

申请人： Infineon Technologies AG

发明人： Roland Dietmüller ,  Andreas Korzenietz ,  Bernd Bitnar ,  Wolfgang Wagner ,  Philip Christoph Brandt ,  Frank Hille ,  Volodymyr Komarnitskyy ,  Frank Pfirsch ,  Franz Josef Niedernostheide ,  Marc Probst

IPC分类号： H01L29/423 ,  H01L29/40 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/42364 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

摘要： A power semiconductor device includes a first region in an active region of a semiconductor body and including first trenches each having a first trench electrode electrically connected to a gate terminal and a first trench insulator. A second region includes second trenches each having a second trench electrode electrically connected to the gate terminal and a second trench insulator. At least one of the following applies: a minimal thickness of each second trench insulator amounts to at least 120% of a corresponding minimal thickness of each first trench insulator; an average thickness of the second trench insulators amounts to at least 120% of an average thickness of the first trench insulators; a trench bottom thickness of each second trench insulator amounts to at least 120% of a corresponding trench bottom thickness of each first trench insulator; a minimal breakdown voltage of each second trench insulator amounts to at least 120% of a minimal breakdown voltage of each first trench insulator.