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    Substrate structure and device employing the same
    2.
    发明授权
    Substrate structure and device employing the same 有权
    基板结构及其使用方法

    公开(公告)号：US09373817B2

    公开(公告)日：2016-06-21

    申请号：US14737882

    申请日：2015-06-12

    Applicant: Industrial Technology Research Institute

    Inventor： Hsiao-Fen Wei ,  Kun-Lin Chuang

    IPC: H01L23/48 ,  H01L51/52

    CPC classification number: H01L51/5253

    Abstract: A substrate structure and a device employing the same are disclosed. An embodiment of the disclosure provides the substrate structure including a flexible substrate and a first barrier layer. The flexible substrate has a top surface, a side surface, and a bottom surface. The first barrier layer is disposed on and contacting the top surface of the flexible substrate, wherein the first barrier layer consists of Si, N, and Z atoms, wherein the Z atom is selected from a group of H, C, and O atoms, and wherein Si of the first barrier layer is present in an amount from 35 to 42 atom %, N of the first barrier layer is present in an amount from 10 to 52 atom %, and Z of the first barrier layer is present in an amount from 6 to 48 atom %.

    Abstract translation: 公开了一种基板结构和使用其的器件。 本公开的实施例提供了包括柔性衬底和第一阻挡层的衬底结构。 柔性基板具有顶表面，侧表面和底表面。 第一阻挡层设置在柔性基板的顶表面上并与其接触，其中第一阻挡层由Si，N和Z原子组成，其中Z原子选自H，C和O原子， 并且其中第一阻挡层的Si以35至42原子％的量存在，第一阻挡层的N以10至52原子％的量存在，并且第一阻挡层的Z以存在的量 6〜48原子％。

    IN-MOLD ELECTRONICS DEVICE
    5.
    发明公开
    IN-MOLD ELECTRONICS DEVICE 审中-公开

    公开(公告)号：US20240112969A1

    公开(公告)日：2024-04-04

    申请号：US18360813

    申请日：2023-07-28

    Applicant: Industrial Technology Research Institute

    Inventor： Yu-Ming Peng ,  Hsiao-Fen Wei ,  Chih-Chia Chang

    IPC: H01L23/14 ,  H01L23/13 ,  H01L23/528 ,  H01L23/532

    CPC classification number: H01L23/145 ,  H01L23/13 ,  H01L23/528 ,  H01L23/53204

    Abstract: An in-mold electronic (IME) device includes a curved substrate, a first conductive layer, a dielectric layer, a gap compensation layer, and a second conductive layer. The curved substrate has a first surface. The first conductive layer is disposed on the first surface. The dielectric layer is disposed on the first conductive layer and has a first thickness. The gap compensation layer is disposed on the first surface and connected to the dielectric layer. The gap compensation layer has a second thickness. The second conductive layer is disposed on the gap compensation layer and electrically connected to the gap compensation layer. A curvature radius of the curved substrate is c, a ratio of the second thickness to the first thickness is r, and c and r satisfy a relationship: r=1.5−0.02c±15%.

    TRANSPARENT FILM HEATER
    8.
    发明申请
    TRANSPARENT FILM HEATER 有权

    公开(公告)号：US20220338309A1

    公开(公告)日：2022-10-20

    申请号：US17707974

    申请日：2022-03-30

    Applicant: Industrial Technology Research Institute

    Inventor： Li-Wei Yao ,  Min-Hsiung Liang ,  Hsiao-Fen Wei ,  Yu-Pei Chang ,  Te-Hsun Lin ,  Chih-Chia Chang ,  Yen-Shu Lee

    IPC: H05B3/84

    Abstract: A transparent film heater is provided, including a transparent conductive film, at least two main electrodes and at least four multiple electrodes. The transparent conductive film is disposed on a transparent substrate. At least two main electrodes are arranged on two sides of the transparent conductive film along an edge of the transparent conductive film. The at least four multiple electrodes are composed of a first pair of multiple electrodes and a second pair of multiple electrodes, and are arranged on the transparent conductive film. A first spacing region and a second spacing region are respectively located between adjacent end points of the two main electrodes along the edge of the transparent conductive film. The first pair of multiple electrodes are arranged in the first spacing region, and the second pair of multiple electrodes are arranged in the second spacing region.

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