公开(公告)号：US10312384B2

公开(公告)日：2019-06-04

申请号：US15351455

申请日：2016-11-15

Applicant: Industrial Technology Research Institute

Inventor： Chao-Cheng Lin ,  Chien-Kai Peng ,  Chen-Cheng Lin ,  Chen-Hsun Du ,  Chorng-Jye Huang ,  Chun-Ming Yeh

IPC: H01L31/0224 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0747

Abstract: A solar cell is provided. The solar cell includes a Si substrate having a first surface and a second surface opposite to each other, an emitter, a first electrode, a doped region, a passivation layer, a doped polysilicon layer, a semiconductor layer, and a second electrode. The emitter is disposed on the first surface. The first electrode is disposed on the emitter. The doped region is disposed in the second surface. The passivation layer is disposed on the second surface. The doped polysilicon layer is disposed on the passivation layer, wherein a plurality of holes penetrates the doped polysilicon layer and the passivation layer and exposes a portion of the second surface. The semiconductor layer is disposed on the doped polysilicon layer and in the holes. The band gap of the semiconductor layer is greater than that of the Si substrate. The second electrode is disposed on the semiconductor layer.

公开(公告)号：US20190131472A1

公开(公告)日：2019-05-02

申请号：US15836910

申请日：2017-12-11

Applicant: Industrial Technology Research Institute

Inventor： Jui-Chung Hsiao ,  Chun-Ming Yeh ,  Chao-Cheng Lin ,  Chorng-Jye Huang ,  Chen-Hsun Du ,  Chun-Heng Chen

IPC: H01L31/0352 ,  H01L31/028 ,  H01L31/074 ,  H01L31/0368 ,  H01L31/0224

Abstract: A solar cell includes a silicon substrate, a passivation structure, and a metal electrode. The passivation structure is disposed on a surface of the silicon substrate, and the passivation structure includes a tunneling layer and a doped polysilicon layer. The tunneling layer is disposed on the surface of the silicon substrate. The doped polysilicon layer is disposed on the tunneling layer and includes a first region and a second region having different thicknesses from each other, and the thickness of the first region is greater than that of the second region, wherein the thickness of the first region is between 50 nm and 500 nm, and the thickness of the second region is greater than 0 and equal to or less than 250 nm. The metal electrode is disposed on the first region of the doped polysilicon layer.

公开(公告)号：US20180114871A1

公开(公告)日：2018-04-26

申请号：US15351455

申请日：2016-11-15

Applicant: Industrial Technology Research Institute

Inventor： Chao-Cheng Lin ,  Chien-Kai Peng ,  Chen-Cheng Lin ,  Chen-Hsun Du ,  Chorng-Jye Huang ,  Chun-Ming Yeh

IPC: H01L31/0224 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L31/022433 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell is provided. The solar cell includes a Si substrate having a first surface and a second surface opposite to each other, an emitter, a first electrode, a doped region, a passivation layer, a doped polysilicon layer, a semiconductor layer, and a second electrode. The emitter is disposed on the first surface. The first electrode is disposed on the emitter. The doped region is disposed in the second surface. The passivation layer is disposed on the second surface. The doped polysilicon layer is disposed on the passivation layer, wherein a plurality of holes penetrates the doped polysilicon layer and the passivation layer and exposes a portion of the second surface. The semiconductor layer is disposed on the doped polysilicon layer and in the holes. The band gap of the semiconductor layer is greater than that of the Si substrate. The second electrode is disposed on the semiconductor layer.

公开(公告)号：US20130269774A1

公开(公告)日：2013-10-17

申请号：US13907994

申请日：2013-06-03

Applicant: Industrial Technology Research Institute

Inventor： Chen-Hsun Du ,  Shih-Peng Hsu ,  Han-Chang Liu

IPC: H01L31/0224

CPC classification number: H01L31/022433 ,  H01L31/022425 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is an electrode of a solar cell including a first electrode layer, a photoelectric conversion layer, an antireflective layer, and a second electrode layer. The first electrode layer is disposed on the photoelectric conversion layer. The antireflective layer is disposed on the photoelectric conversion layer to cover the first electrode layer. The second electrode layer is disposed on the antireflective layer and electrically connected to the first electrode layer, wherein a material of the first electrode layer does not react with the photoelectric conversion layer and the antireflective layer during a sintering process, and at least a material of the second electrode layer reacts with the antireflective layer during the sintering process.

Abstract translation: 提供了包括第一电极层，光电转换层，抗反射层和第二电极层的太阳能电池的电极。 第一电极层设置在光电转换层上。 抗反射层设置在光电转换层上以覆盖第一电极层。 第二电极层设置在抗反射层上并电连接到第一电极层，其中第一电极层的材料在烧结过程中不与光电转换层和抗反射层反应，并且至少是材料 第二电极层在烧结过程中与抗反射层反应。

公开(公告)号：US20190221701A1

公开(公告)日：2019-07-18

申请号：US15871068

申请日：2018-01-15

Applicant: Industrial Technology Research Institute

Inventor： Chao-Cheng Lin ,  Chorng-Jye Huang ,  Chen-Cheng Lin ,  Chun-Heng Chen ,  Chen-Hsun Du ,  Chun-Ming Yeh ,  Jui-Chung Hsiao

IPC: H01L31/0747 ,  H01L31/18 ,  H01L31/074 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/068

Abstract: A solar cell includes a photoelectric conversion layer, a doped layer, a first passivation layer, a first TCO layer, a front electrode and a back electrode. The doped layer is disposed on the front surface of the photoelectric conversion layer. The first passivation layer is disposed on the doped layer, wherein the first passivation layer has a plurality of openings exposing a portion of the doped layer. The first TCO layer is disposed on the first passivation layer and in the openings, and directly contacts the exposed doped layer via the openings, wherein a ratio of an area of the openings to an area of the first TCO layer is between 0.01 and 0.5. The front electrode is disposed on the first TCO layer. The back electrode is disposed on the back surface of the photoelectric conversion layer.

公开(公告)号：US10693030B2

公开(公告)日：2020-06-23

申请号：US15871068

申请日：2018-01-15

Applicant: Industrial Technology Research Institute

Inventor： Chao-Cheng Lin ,  Chorng-Jye Huang ,  Chen-Cheng Lin ,  Chun-Heng Chen ,  Chen-Hsun Du ,  Chun-Ming Yeh ,  Jui-Chung Hsiao

IPC: H01L31/0747 ,  H01L31/0224 ,  H01L31/074 ,  H01L31/18 ,  H01L31/068 ,  H01L31/0368 ,  H01L31/0216

Abstract: A solar cell includes a photoelectric conversion layer, a doped layer, a first passivation layer, a first TCO layer, a front electrode and a back electrode. The doped layer is disposed on the front surface of the photoelectric conversion layer. The first passivation layer is disposed on the doped layer, wherein the first passivation layer has a plurality of openings exposing a portion of the doped layer. The first TCO layer is disposed on the first passivation layer and in the openings, and directly contacts the exposed doped layer via the openings, wherein a ratio of an area of the openings to an area of the first TCO layer is between 0.01 and 0.5. The front electrode is disposed on the first TCO layer. The back electrode is disposed on the back surface of the photoelectric conversion layer.

公开(公告)号：US08895347B2

公开(公告)日：2014-11-25

申请号：US13869764

申请日：2013-04-24

Applicant: Industrial Technology Research Institute

Inventor： Teng-Yu Wang ,  Chien-Hsun Chen ,  Chen-Hsun Du ,  Chung-Yuan Kung

IPC: H01L21/00 ,  H01L21/30 ,  H01L31/18 ,  H01L21/20 ,  H01L31/0236 ,  H01L31/068

CPC classification number: H01L31/18 ,  H01L21/20 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547

Abstract: The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process or a low temperature process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.

Abstract translation: 本公开提供了一种用于制造具有纹理表面的半导体层的方法，包括：（a）提供纹理化衬底; （b）在纹理化衬底上形成至少一个半导体层; （c）在半导体层上形成金属层; 和（d）对纹理化衬底，半导体层和金属层进行热处理或低温工艺，其中半导体层通过热处理与纹理化衬底分离，以获得具有金属层的半导体层和 纹理表面。

公开(公告)号：US20140224313A1

公开(公告)日：2014-08-14

申请号：US13939185

申请日：2013-07-11

Applicant: Industrial Technology Research Institute

Inventor： Der-Chin Wu ,  Li-Yu Li ,  Chen-Hsun Du ,  Bing-Cyun Chen

IPC: H01L31/0216

CPC classification number: H01L31/02167 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A silicon solar cell structure includes a silicon substrate, a phosphorus diffusion doping layer within a surface of the silicon substrate, a passivation layer on the surface of the silicon substrate, a phosphorous-containing oxide layer between the passivation layer and the phosphorus diffusion doping layer within the silicon substrate, and an electrode on the surface of the silicon substrate through the passivation layer and the phosphorous-containing oxide layer.

Abstract translation: 硅太阳能电池结构包括硅衬底，硅衬底表面内的磷扩散掺杂层，硅衬底表面上的钝化层，钝化层和磷扩散掺杂层之间的含磷氧化物层 以及通过钝化层和含磷氧化物层在硅衬底的表面上的电极。

公开(公告)号：US20140083502A1

公开(公告)日：2014-03-27

申请号：US13726650

申请日：2012-12-26

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Der-Chin Wu ,  Chen-Hsun Du

IPC: H01L31/0376 ,  H01L31/052

CPC classification number: H01L31/03762 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a solar cell including a substrate of a first conductivity type, a first electrode, a dielectric layer, a region of a second conductivity type, and a second electrode. The substrate of the first conductivity type has a front surface and a back surface opposite to each other. The first electrode is disposed on the front surface. The dielectric layer has charges. The dielectric layer is disposed on the front surface and positioned at both sides of the first electrode. The region of the second conductivity type is disposed between the substrate of the first conductivity type and the first electrode, wherein the region of the second conductivity type is disposed only below the first electrode. The second electrode is disposed on the back surface.

Abstract translation: 提供一种太阳能电池，其包括第一导电类型的基板，第一电极，电介质层，第二导电类型的区域和第二电极。 第一导电类型的衬底具有彼此相对的前表面和后表面。 第一电极设置在前表面上。 电介质层具有电荷。 电介质层设置在前表面并且位于第一电极的两侧。 第二导电类型的区域设置在第一导电类型的基板和第一电极之间，其中第二导电类型的区域仅设置在第一电极的下方。 第二电极设置在背面。

公开(公告)号：US08664520B2

公开(公告)日：2014-03-04

申请号：US13907994

申请日：2013-06-03

Applicant: Industrial Technology Research Institute

Inventor： Chen-Hsun Du ,  Shih-Peng Hsu ,  Han-Chang Liu

IPC: H01L31/00

CPC classification number: H01L31/022433 ,  H01L31/022425 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is an electrode of a solar cell including a first electrode layer, a photoelectric conversion layer, an antireflective layer, and a second electrode layer. The first electrode layer is disposed on the photoelectric conversion layer. The antireflective layer is disposed on the photoelectric conversion layer to cover the first electrode layer. The second electrode layer is disposed on the antireflective layer and electrically connected to the first electrode layer, wherein a material of the first electrode layer does not react with the photoelectric conversion layer and the antireflective layer during a sintering process, and at least a material of the second electrode layer reacts with the antireflective layer during the sintering process.

Abstract translation: 提供了包括第一电极层，光电转换层，抗反射层和第二电极层的太阳能电池的电极。 第一电极层设置在光电转换层上。 抗反射层设置在光电转换层上以覆盖第一电极层。 第二电极层设置在抗反射层上并电连接到第一电极层，其中第一电极层的材料在烧结过程中不与光电转换层和抗反射层反应，并且至少是材料 第二电极层在烧结过程中与抗反射层反应。