公开(公告)号：US20140224313A1

公开(公告)日：2014-08-14

申请号：US13939185

申请日：2013-07-11

Applicant: Industrial Technology Research Institute

Inventor： Der-Chin Wu ,  Li-Yu Li ,  Chen-Hsun Du ,  Bing-Cyun Chen

IPC: H01L31/0216

CPC classification number: H01L31/02167 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A silicon solar cell structure includes a silicon substrate, a phosphorus diffusion doping layer within a surface of the silicon substrate, a passivation layer on the surface of the silicon substrate, a phosphorous-containing oxide layer between the passivation layer and the phosphorus diffusion doping layer within the silicon substrate, and an electrode on the surface of the silicon substrate through the passivation layer and the phosphorous-containing oxide layer.

Abstract translation: 硅太阳能电池结构包括硅衬底，硅衬底表面内的磷扩散掺杂层，硅衬底表面上的钝化层，钝化层和磷扩散掺杂层之间的含磷氧化物层 以及通过钝化层和含磷氧化物层在硅衬底的表面上的电极。