知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

4 records (took 0.013 seconds)

    METHOD FOR REPAIRING SOLAR CELL MODULE
    1.
    发明申请
    METHOD FOR REPAIRING SOLAR CELL MODULE 审中-公开
    修复太阳能电池模块的方法

    公开(公告)号：US20140087487A1

    公开(公告)日：2014-03-27

    申请号：US14092739

    申请日：2013-11-27

    Applicant: Industrial Technology Research Institute

    Inventor： Chun-Heng Chen ,  Yi-Chan Chen

    IPC: H01L31/18

    CPC classification number: H01L31/18 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521

    Abstract: A method for repairing a solar cell module includes the following steps. A solar cell module, which is provided, includes a first and a second solar cell serially connected. A first terminal is electrically connected to a first electrode layer of the first solar cell. A second terminal is electrically connected to a second electrode layer of the second solar cell. A polarity of the first electrode layer is the same as that of the second electrode layer. A biased voltage signal is generated and transmitted to the first solar cell and the second solar cell through the first terminal and the second terminal. The biased voltage signal includes a forward biased voltage part greater than zero and a reversed biased voltage part smaller than zero. The voltage value of the reversed biased voltage part is increasingly decreased in a step-like manner as time goes by.

    Abstract translation: 一种修复太阳能电池模块的方法包括以下步骤。 提供的太阳能电池模块包括串联连接的第一和第二太阳能电池。 第一端子电连接到第一太阳能电池的第一电极层。 第二端子电连接到第二太阳能电池的第二电极层。 第一电极层的极性与第二电极层的极性相同。 产生偏置电压信号，并通过第一端子和第二端子传输到第一太阳能电池和第二太阳能电池。 偏置电压信号包括大于零的正向偏置电压部分和小于零的反向偏置电压部分。 反向偏置电压部分的电压值随着时间的推移逐步降低。

    SOLAR CELL
    3.
    发明申请
    SOLAR CELL 审中-公开

    公开(公告)号：US20190221701A1

    公开(公告)日：2019-07-18

    申请号：US15871068

    申请日：2018-01-15

    Applicant: Industrial Technology Research Institute

    Inventor： Chao-Cheng Lin ,  Chorng-Jye Huang ,  Chen-Cheng Lin ,  Chun-Heng Chen ,  Chen-Hsun Du ,  Chun-Ming Yeh ,  Jui-Chung Hsiao

    IPC: H01L31/0747 ,  H01L31/18 ,  H01L31/074 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/068

    Abstract: A solar cell includes a photoelectric conversion layer, a doped layer, a first passivation layer, a first TCO layer, a front electrode and a back electrode. The doped layer is disposed on the front surface of the photoelectric conversion layer. The first passivation layer is disposed on the doped layer, wherein the first passivation layer has a plurality of openings exposing a portion of the doped layer. The first TCO layer is disposed on the first passivation layer and in the openings, and directly contacts the exposed doped layer via the openings, wherein a ratio of an area of the openings to an area of the first TCO layer is between 0.01 and 0.5. The front electrode is disposed on the first TCO layer. The back electrode is disposed on the back surface of the photoelectric conversion layer.

    SOLAR CELL
    4.
    发明申请
    SOLAR CELL 审中-公开

    公开(公告)号：US20190131472A1

    公开(公告)日：2019-05-02

    申请号：US15836910

    申请日：2017-12-11

    Applicant: Industrial Technology Research Institute

    Inventor： Jui-Chung Hsiao ,  Chun-Ming Yeh ,  Chao-Cheng Lin ,  Chorng-Jye Huang ,  Chen-Hsun Du ,  Chun-Heng Chen

    IPC: H01L31/0352 ,  H01L31/028 ,  H01L31/074 ,  H01L31/0368 ,  H01L31/0224

    Abstract: A solar cell includes a silicon substrate, a passivation structure, and a metal electrode. The passivation structure is disposed on a surface of the silicon substrate, and the passivation structure includes a tunneling layer and a doped polysilicon layer. The tunneling layer is disposed on the surface of the silicon substrate. The doped polysilicon layer is disposed on the tunneling layer and includes a first region and a second region having different thicknesses from each other, and the thickness of the first region is greater than that of the second region, wherein the thickness of the first region is between 50 nm and 500 nm, and the thickness of the second region is greater than 0 and equal to or less than 250 nm. The metal electrode is disposed on the first region of the doped polysilicon layer.

Patent Agency Ranking