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    SOLAR CELL
    2.
    发明申请
    SOLAR CELL 审中-公开

    公开(公告)号：US20190221701A1

    公开(公告)日：2019-07-18

    申请号：US15871068

    申请日：2018-01-15

    Applicant: Industrial Technology Research Institute

    Inventor： Chao-Cheng Lin ,  Chorng-Jye Huang ,  Chen-Cheng Lin ,  Chun-Heng Chen ,  Chen-Hsun Du ,  Chun-Ming Yeh ,  Jui-Chung Hsiao

    IPC: H01L31/0747 ,  H01L31/18 ,  H01L31/074 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/068

    Abstract: A solar cell includes a photoelectric conversion layer, a doped layer, a first passivation layer, a first TCO layer, a front electrode and a back electrode. The doped layer is disposed on the front surface of the photoelectric conversion layer. The first passivation layer is disposed on the doped layer, wherein the first passivation layer has a plurality of openings exposing a portion of the doped layer. The first TCO layer is disposed on the first passivation layer and in the openings, and directly contacts the exposed doped layer via the openings, wherein a ratio of an area of the openings to an area of the first TCO layer is between 0.01 and 0.5. The front electrode is disposed on the first TCO layer. The back electrode is disposed on the back surface of the photoelectric conversion layer.

    Solar cell
    3.
    发明授权
    Solar cell 有权

    公开(公告)号：US10312384B2

    公开(公告)日：2019-06-04

    申请号：US15351455

    申请日：2016-11-15

    Applicant: Industrial Technology Research Institute

    Inventor： Chao-Cheng Lin ,  Chien-Kai Peng ,  Chen-Cheng Lin ,  Chen-Hsun Du ,  Chorng-Jye Huang ,  Chun-Ming Yeh

    IPC: H01L31/0224 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0747

    Abstract: A solar cell is provided. The solar cell includes a Si substrate having a first surface and a second surface opposite to each other, an emitter, a first electrode, a doped region, a passivation layer, a doped polysilicon layer, a semiconductor layer, and a second electrode. The emitter is disposed on the first surface. The first electrode is disposed on the emitter. The doped region is disposed in the second surface. The passivation layer is disposed on the second surface. The doped polysilicon layer is disposed on the passivation layer, wherein a plurality of holes penetrates the doped polysilicon layer and the passivation layer and exposes a portion of the second surface. The semiconductor layer is disposed on the doped polysilicon layer and in the holes. The band gap of the semiconductor layer is greater than that of the Si substrate. The second electrode is disposed on the semiconductor layer.

    SOLAR CELL
    4.
    发明申请
    SOLAR CELL 审中-公开

    公开(公告)号：US20190131472A1

    公开(公告)日：2019-05-02

    申请号：US15836910

    申请日：2017-12-11

    Applicant: Industrial Technology Research Institute

    Inventor： Jui-Chung Hsiao ,  Chun-Ming Yeh ,  Chao-Cheng Lin ,  Chorng-Jye Huang ,  Chen-Hsun Du ,  Chun-Heng Chen

    IPC: H01L31/0352 ,  H01L31/028 ,  H01L31/074 ,  H01L31/0368 ,  H01L31/0224

    Abstract: A solar cell includes a silicon substrate, a passivation structure, and a metal electrode. The passivation structure is disposed on a surface of the silicon substrate, and the passivation structure includes a tunneling layer and a doped polysilicon layer. The tunneling layer is disposed on the surface of the silicon substrate. The doped polysilicon layer is disposed on the tunneling layer and includes a first region and a second region having different thicknesses from each other, and the thickness of the first region is greater than that of the second region, wherein the thickness of the first region is between 50 nm and 500 nm, and the thickness of the second region is greater than 0 and equal to or less than 250 nm. The metal electrode is disposed on the first region of the doped polysilicon layer.

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